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    N KT Q N N N: Quizz 3 For EE230/2

    Uploaded by

    Saied Aly Salamah
    This quiz contains 10 points worth of questions about a silicon pn-junction diode. The diode has a cross-sectional area of 100 μm2 and is at room temperature under equilibrium conditions. It has a p-side doping of 1016 cm-3 and n-side doping of 2×1017 cm-3. The questions ask the student to compute the built-in voltage, depletion width, and carrier concentrations for a forward bias of 0.2V, as well as the saturation and total currents. A cheat sheet of relevant semiconductor equations is also provided.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    N KT Q N N N: Quizz 3 For EE230/2

    Uploaded by

    Saied Aly Salamah
    19 views3 pages
    This quiz contains 10 points worth of questions about a silicon pn-junction diode. The diode has a cross-sectional area of 100 μm2 and is at room temperature under equilibrium conditions. It has a p-side doping of 1016 cm-3 and n-side doping of 2×1017 cm-3. The questions ask the student to compute the built-in voltage, depletion width, and carrier concentrations for a forward bias of 0.2V, as well as the saturation and total currents. A cheat sheet of relevant semiconductor equations is also provided.

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    This quiz contains 10 points worth of questions about a silicon pn-junction diode. The diode has a cross-sectional area of 100 μm2 and is at room temperature under equilibrium conditions. It has a p-side doping of 1016 cm-3 and n-side doping of 2×1017 cm-3. The questions ask the student to compute the built-in voltage, depletion width, and carrier concentrations for a forward bias of 0.2V, as well as the saturation and total currents. A cheat sheet of relevant semiconductor equations is also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    19 views3 pages

    N KT Q N N N: Quizz 3 For EE230/2

    Uploaded by

    Saied Aly Salamah
    This quiz contains 10 points worth of questions about a silicon pn-junction diode. The diode has a cross-sectional area of 100 μm2 and is at room temperature under equilibrium conditions. It has a p-side doping of 1016 cm-3 and n-side doping of 2×1017 cm-3. The questions ask the student to compute the built-in voltage, depletion width, and carrier concentrations for a forward bias of 0.2V, as well as the saturation and total currents. A cheat sheet of relevant semiconductor equations is also provided.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Quizz 3 for EE230/2

    ECE-Kuwait University

    Name:

    Dr. A. Al-Omar

    ID:

    8-Mar-16

    This quiz counts as 10 points.


    A Si step pn-junction with cross sectional area of 100 m2 is maintained at
    room temperature under equilibrium conditions has a p-side doping of
    N A = 1016 cm 3 and an n-side doping of N D = 2 1017 cm 3 . Compute:

    2 1017 1016
    kT N D N A
    ln
    = 0.02585 ln
    (a) Vbi =
    = 0.792V
    q ni2
    10 20

    2pt

    (b) xn, xp ,W, and Cdep for a forward applied voltage VA = 0.2V .
    W=

    2 r 0 1
    1
    +
    V Va =

    q N A N D bi

    = 2.23 105

    2 12 8.854 1014 1
    1
    16 +
    Vbi Va
    19
    1.602 10
    2 1017
    10

    (0.792 0.2) = 2.87 105 cm = 0.287 m

    1pt

    xp =

    ND
    2 1017
    W = 16
    2.87 105 = 2.73 105 cm = 0.273 m
    NA + ND
    10 + 2 1017

    1pt

    xn =

    NA
    1016
    W = 16
    2.87 105 = 1.367 106 cm = 13.7nm
    NA + ND
    10 + 2 1017

    1pt

    Emax =

    qN A
    1.602 1019 1016
    xp =
    2.73 105 = 4.123 104 V/cm
    r0
    12 8.854 1014

    1pt

    (c) Saturation and total current I0 and I for a forward applied voltage VA = 0.2V .
    Ln = Dn n =

    kT
    n n = 0.02585 475 0.2 10 6 = 1.567 10 3 cm = 15.67 m
    q

    1pt

    L p = D p p =

    kT
    p p = 0.02585 125 0.1 10 6 = 5.684 10 4 cm = 5.684 m
    q

    1pt

    D
    DN
    I 0 = I 0 = qAni2 P +

    N
    L
    N
    D P
    A LN

    = 1.602 10 19 100 10 4
    = 1.301 10 17 A 1pt

    0.02585 125
    0.02585 475

    10 20
    +

    4
    17
    5.684 10 2 10
    1.567 10 3 1016

    I D (Va ) = I 0 eqVa /kT 1 = 1.301 10 17 e0.2/.02585 1 = 2.980 10 14 A = 29.80 fA 1pt

    Cheat Sheet

    Cheat Sheet
    Physical Constants: For Si
    q = 1.602 10 19 C , 0 = 8.854 10 14 F / cm , ni = 1010 cm 3 , Eg = 1.12eV
    N C = 2.8 1019 cm 3 , NV = 1.04 1019 cm 3 ,

    D kT
    =
    q

    = 25.85mV
    T =300 K

    for majority carriers n = 1500 cm 2 /(V -s) , and p = 475 cm 2 /(V-s)


    for minority carriers n = 500 cm 2 /(V -s) , and p = 125 cm 2 /(V-s)

    n = 0.2 s , and p = 0.1 s

    Carrier Concentration:
    n = N C e(EFn EC )/kT = ni e(EFn Ei )/kT
    p = NV e

    (EV EFp )/kT

    pn = ni2 e

    = ni e

    (Ei EFp )/kT

    (EFn EFp )/kT

    for homogeneous semiconductor p n + N d+ N A = 0


    2

    for n-type material n =

    N + N A
    N D+ N A
    2
    + D
    + ni
    2
    2

    for p-type material

    N N D+
    N N D+
    ni2
    2
    p= A
    + A
    +
    n
    ,
    n
    =
    i

    2
    2
    p

    Current Equation:
    !
    kT
    J n = n nE fn = qn n + qDn n , Dn =
    n
    q
    !
    kT
    J p = p pE fp = q p p qD p p , D p =
    p
    q

    conductivity = qn n + q p p

    Resistance R =

    l
    A

    Homogeneous generation and recombination


    n = n(t) n0 , p = p(t) p0
    n
    p
    n
    p
    = GL (t)
    ,
    = GL (t)
    t
    n
    t
    p
    t

    for step function soln. n(t) = (n0 n )e n + n where n = GL n

    continuity equation
    n 1
    = J n + Gn Rn ,
    t q

    1
    p
    = J p + G p Rp
    q
    t

    minority carrier diffusion equation


    n p
    2 n p n p
    = DN

    + GL (t) ,
    t
    x2
    n

    pn
    2 pn pn
    = Dp

    + GL (t)
    t
    x2
    p

    Cheat Sheet
    general solution in the base region

    diffusion length Ln0 = Dn n

    x
    x
    pn = A cosh + B sinh
    Lp
    Lp

    x
    x

    n p = A cosh L + B sinh L
    n
    n

    npn

    L p0 = D p p

    frequency dependent diffusion length Ln = Ln0 1 + j n


    Poisson Eqn. =

    pnp

    L p = L p0 1 + j p

    !
    q
    1

    =
    p(x) n(x) + N d+ (x) N A (x)) , =-V= Ei
    (
    q
    r0

    For a step pn-junction (x p x xn )


    2 r 0 N A + N D
    NA
    ND
    Vbi Va ) , xn =
    W , and x p =
    W
    (

    q NA ND
    NA + ND
    NA + ND

    W =

    2
    qN A
    qN A

    xp + x
    x p + x x p x 0

    2 r 0
    r 0

    E=
    V (x) =
    qN D ( xn x ) 0 x xn
    Vbi Va qN D ( xn x )2
    r 0

    2 r 0

    x p x 0
    0 x xn

    I-V for step pn-junction WN and WP are the width of the quasinuetral regions
    qV
    I = I 0 e kT 1

    DP
    DN

    qAni N L + N L long diode


    DN
    DP
    D P
    A N
    =
    +
    I 0 = qAni2

    W
    W
    DP
    DN
    N D LP tanh N N A LN tanh P qAni2
    +
    short diode

    LP
    LN

    N DWP N AWN

    Ebers-Moll Model
    qVEB
    qVCB
    qVEB
    qVCB

    I E = I ES e kT 1 I I CS e kT 1 , I C = N I ES e kT 1 I CS e kT 1

    qD p ni2 coth
    I ES =

    Wb
    Lp

    Lp Nd E

    qD p ni2 coth
    , I CS =

    Lp Nd C

    Wb
    Lp

    ,N =

    W
    E
    sec h b
    C
    Lp

    I =

    c
    E sec h

    Wb
    Lp

    N I ES = I I CS

    Useful Integrals: sinh(bx)dx =

    cosh(bx)
    + const ,
    b

    cosh(bx)dx =

    sinh(bx)
    + const
    b

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