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MTJ Cafm

This document discusses magnetic tunnel junctions (MTJs) and their potential applications in computer hard drives and magnetoresistive random access memory (MRAM). To compete with other memory technologies, MTJs need to be smaller than 65 nm. The document examines using field-induced and current-induced switching in MTJs as small as 200 nm x 100 nm pillars. It also explores using perpendicular interface anisotropy at the MgO/ferromagnet interface to achieve perpendicular magnetic easy axis in thin CoFeB layers less than 1.25 nm. Voltage control of the interface anisotropy and magnetic properties of MTJs is also investigated. Telegraph noise measurements near the coercive field provide information about the energy barriers

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353 views14 pages

MTJ Cafm

This document discusses magnetic tunnel junctions (MTJs) and their potential applications in computer hard drives and magnetoresistive random access memory (MRAM). To compete with other memory technologies, MTJs need to be smaller than 65 nm. The document examines using field-induced and current-induced switching in MTJs as small as 200 nm x 100 nm pillars. It also explores using perpendicular interface anisotropy at the MgO/ferromagnet interface to achieve perpendicular magnetic easy axis in thin CoFeB layers less than 1.25 nm. Voltage control of the interface anisotropy and magnetic properties of MTJs is also investigated. Telegraph noise measurements near the coercive field provide information about the energy barriers

Uploaded by

api-309499161
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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Magnetic Tunnel Junctions

Computer Hard Drives


Bit Patterned Media
1 TbPSI 25 nm bit

Magnetoresistive
Random Access
Memory (MRAM)

Everspin Technologies

Existing technology: 80
nm x 160 nm
Less than 65 nm
required to compete with
DRAM or Flash

Need for smaller, lower power devices


1

See Field Induced Switching


from Magnetoresistance
Apply external magnetic
field
200 nm x 100 nm pillar
10 A DC bias for
measurements
R = 90

Current
Field
N

Time

S
2

Get Current-Induced Switching


from Spin Transfer Torque
Same 200 nm x 100
nm pillar
R = 90 at 10 A
Parallel to Antiparallel =
-3.65 x 106 A/cm2
Antiparallel to Parallel =
+1.65 x 106 A/cm2
Current
I

Field

E. Evarts, et al., APL 95 132510 (2009)


Time
3

Perpendicular Interface Anisotropy


Spin orbit interactions at
MgO/Fe or CoFeB interface
induce perpendicular K
Competition between in-plane
and out-of-plane K
Perpendicular easy axis for
thin CoFeB (< 1.25 nm)

CoFeB

MgO

M s2 K int
K eff K bulk

2 0 tCoFeB
Ikeda et. al. Nat. Mat. 9 721 (2010)
4

Voltage-Controlled Interface K
Thick, low Hc layer CoFeB

Hc
excess eMgO

e- deficit

d = 7 m

Hc
Thin, high Hc layer CoFeB
M(H) Top
M(H) Bottom
V(t)

W. G. Wang et. al. Nat. Mat. 11 64 (2012)

Can use voltage pulse to


toggle between low and
high R states of the MTJ
5

MTJ Samples with Interface Anisotropy


Thin film stacks grown by group of C.L. Chien at Johns
Hopkins or group of W.-G. Wang at Univ. of Arizona
Thin films pattern via ion milling by group of C.A. Ross at MIT
or via RIE at CMU by the group of S. A. Majetich
HSQ (50 nm)

HSQ (50 nm)

SiNx (50 nm)

SiNx (50 nm)

Pt (30 nm)

Pt (30 nm)

CoFeB (1.23 nm)


MgO (~2 nm)
CoFeB (0.82 nm)
Ta (7 nm)
Ru (26 nm)
Ta (7 nm)

Ru (10 nm)
CoFeB (1.6 nm)
MgO (~1.8 nm)
CoFeB (0.8 nm)
Ta (7 nm)
Ru (8 nm)
Ta (7 nm)

SiO2 (1 m)

SiO2 (1 m)

Si

Si

JHU, Co40Fe40B20

U Ariz., Co20Fe60B20
6

Topography and Current Maps


For fixed applied magnetic field and voltage bias, scan tip

Topographic image

Current map

If sample is initialized uniformly, devices with the same


diameter will ideally have the same current
7

Telegraph Noise in MTJs near Hc


345 Oe/s ramp rate when
measuring minor loop

Measure TMR (t) at fixed H


Mostly antiparallel

Mostly parallel state

Energy Barrier as a Function of H


Average lifetimes of the parallel (P) and antiparallel (AP) states
vary exponentially with H but slopes different
70 nm

initialized with hard layer down

initialized with hard layer up

Magnetostatic field of hard layer affects switching of soft layer


9

Stability of AP, P States in


Telegraphing Region
Large fields near corners

z
x

Heff,z = 0

Depending on the applied field Happl, different regions of the


disk can favor P (Heff,z < 0)or AP (Heff,z > 0) orientations
10

Reversal Nucleates in Different Regions


Top View of Soft Layer

time
APP switching nucleates at edge

M up

time

M down

PAP switching nucleates in interior

Different energy barriers for switching 1 to 0


and 0 to 1 in perpendicular MR devices
Appl. Phys. Lett. 108, 022406 (2016)

11

Why are the Slopes Different?

Once switched from AP to P, barrier to switching back is larger


than for P to AP
Volume favoring AP is roughly proportional to Happl in the
telegraphing region
12

22 nm
Co20Fe60B20/MgO/Co20Fe60B20
MTJs

Topography: 14-15 nm tall

Current map: still see variations

Only top CoFeB layer patterned,


so magnetostatic field is uniform
13

Switching in 22 nm MTJs
Co20Fe60B20 (0.8 nm)/1.0 nm
MgO/ Co20Fe60B20 (1.6 nm)

Can measure R(H) switching at 300 K for an 22 nm device

14

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