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Tutorial 5 Mos

This document contains 5 questions regarding MOSFET circuits and their analysis. Question 1 involves determining voltages and currents in a MOSFET amplifier circuit. Question 2 discusses why MOSFET drain currents saturate with increasing drain-source voltage and how to minimize the channel length modulation effect. Question 3 asks to determine the output resistance of another MOSFET amplifier by drawing its small-signal model. Question 4 involves deriving expressions for the bias point and gain of a MOSFET amplifier. Question 5 compares the transconductance of MOSFETs and BJTs, and asks to analyze a two-stage MOSFET amplifier circuit.

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35 views

Tutorial 5 Mos

This document contains 5 questions regarding MOSFET circuits and their analysis. Question 1 involves determining voltages and currents in a MOSFET amplifier circuit. Question 2 discusses why MOSFET drain currents saturate with increasing drain-source voltage and how to minimize the channel length modulation effect. Question 3 asks to determine the output resistance of another MOSFET amplifier by drawing its small-signal model. Question 4 involves deriving expressions for the bias point and gain of a MOSFET amplifier. Question 5 compares the transconductance of MOSFETs and BJTs, and asks to analyze a two-stage MOSFET amplifier circuit.

Uploaded by

omer
Copyright
© © All Rights Reserved
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Download as PDF, TXT or read online on Scribd
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1 EEE31102

)MOSFET( 4

Question 1
a. For the FET amplifier below, determine VDQ and IDQ. Assume the FET is operating in its
saturation region. Assume the following parameters: VDD=12v, Kn=0.24 mA/V2, VTH=3V,
R1=10M, RD=2K, =0.

b. The n-channel MOSFET in the circuit below has VTH=1V and Kn= 0.5mA/V2.
i. Assuming the FET is operating in its saturation region, show that ID=0.92mA .
ii. Determine the transconductance gm .
iii. If vi= 10mV, what is the corresponding change in drain current?
iv. If vi= 10mV what is the corresponding change in drain voltage?

Question 2
a. Explain why the current (ID) in a long-channel MOSFET saturates with increasing drainto-source voltage (VDS).
b. How can the channel length modulation effect be minimized, and what is the trade-off?
c. Consider a MOSFET with threshold voltage VTH=0.5V, biased such that VGS = 1.0V, with
the I-V characteristic shown.
i. Is this a long-channel or short-channel MOSFET? Justify your answer.
ii. Indicate by sketching how the I-V characteristic would change if VGS were to be
increased by 0.5V.
iii. What is the output resistance (ro) of this MOSET?
5.0
4.5
4.0
3.5
3.0
ID (mA) 2.5
2.0
1.5
1.0
0.5
0.0
0.00

0.25

0.50

0.75

1.00

1.25

1.50

VDS [V]

Question 3:
Determine the output resistance Ro for the amplifier below. Start by drawing a smallsignal model for the following circuit. Be sure to supply all necessary details ro, polarities
of vi, vg, vo, labeling the gate, source, and drain, an expression for gm and so on. Cc is a
coupling capacitor and =0 for the FET.

Question 4

Consider the N-channel MOSFET amplifier given above. = 2 ( )2 , = 5, =


2, = 1 2 , = 1 . You can ignore rd of the MOSFET. CC is the input coupling
capacitor. You can assume it is infinitely large.
a. Derive an expression for the transistor bias point VGSQ as a function of VDD , Ra and Rb .
b. Determine the required ratio Ra /Rb such that the MOSFET gm =1mA/V. Remember that gm is

defined as .

c. What is the voltage bias point of the output VoutQ ?


d. Draw the small-signal model for the amplifier and calculate the gain vout /vin. Clearly label the
component values and small-signal voltages vin and vout .Use the results from part (b).

Question 5:
a. For a given current, why is the transconductance for a MOSFET generally smaller than that for
BJT?
b. Consider then amplifier circuit below. M1 and M2 are long-channel MOSFETs with oCox = 200
A/V2, VTH = 0.4 V, =0, and are biased such that ID1=ID2=0.1mA. VDD=1.8V. (W/L)1= 16 and
(W/L)2=1.
i.
What is the DC bias voltage at the input (VG1)?
ii.
What is the Voltage gain (numerical answer)?
iii.
Calculate the headroom., i.e. the maximum amplitude of the small-signal output voltage
for which M1 operates in saturation?

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