4 - BJTs
4 - BJTs
4 - BJTs
Objectives
Introduction to Bipolar Junction
Transistor (BJT)
Basic Transistor Bias and Operation
Parameters, Characteristics and
Transistor Circuits
Amplifier or Switch
Key Words: BJT, Bias, Transistor, Amplifier, Switch
Introduction
A transistor is a device which can be used as either an
amplifier or a switch. Lets first consider its operation in a
more simple view as a current controlling device.
Transistor Structure
The BJT (bipolar junction transistor) is constructed with three doped
semiconductor regions separated by two pn junctions, as shown in Figure
(a). The three regions are called emitter, base, and collector. Physical
p
of the two types
yp of BJTs are shown in Figure
g
(b)
( ) and (c).
( )
representations
One type consists of two n regions separated by a p regions (npn), and other
type consists of two p regions separated by an n region (pnp).
Transistor Currents
The directions of the currents in both npn and pnp transistors and their
schematic symbol are shown in Figure (a) and (b). Notice that the arrow
on the emitter of the transistor symbols points in the direction of
conventional current. These diagrams show that the emitter current (IE) is
the sum of the collector current (IC) and the base current (IB), expressed as
follows:
IE = IC + IB
= IC/IB
= IC/IE
mA.
DC =
I C 3.65mA
=
= 73
IB
50
0 A
IE = IC + IB = 3.65 mA + 50 A = 3.70 mA
DC =
I C 3.65mA
=
= 0.986
I E 3.70mA
: respect to emitter
where IC = DCIB
Ex 4-2 Determine IB, IC, VBE, VCE, and VCB in the circuit of Figure.
The transistor has a DC = 150.
When the base-emitter junction is forward-biased,
VBE 0.7 V
IB = (VBB VBE) / RB
= (5 V 0.7 V) / 10 k = 430 A
IC = DCIB
= (150)(430 A)
= 64.5 mA
IE = IC + IB
= 64.5 mA + 430 A
= 64.9 mA
Ex 4-3
Sketch an ideal family of collector curves for for the circuit in Figure for
IB = 5 A increment. Assume DC = 100 and that VCE does not exceed breakdown.
IC = DC IB
IB
5 A
10 A
15 A
20 A
25 A
IC
0.5 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
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Ex 4-4
I C ( sat ) =
=
10 V 0.2V
= 9.8 mA
1.0 k
IB =
IC =
PD (max)
VCE
its maximum
it
i
power rating
ti is
i 250 mW,
W what
h t is
i the
th mostt collector
ll t
current that it can handle?
IC =
PD (max)
VCE
250 mW
= 41.7 mA
6V
10
Ex 4-6
IB =
I C = DC I B = (100)(195A) = 19.5mA
The voltage drop across RC is.
VRc = ICRC = (19.5 mA)(1.0 k) = 19.5 V
VRc = VCC VCE when
h VCE = VCE(max) = 15 V
VCC(max) = VCE(max) + VRc = 15 V + 19.5 V = 34.5 V
PD = VCE(max)IC = (15V)(19.5mA) = 293 mW
VCE(max) will be exceeded first because the entire supply voltage, VCC will
be dropped across the transistor.
The ac emitter
Th
i
current : Ie Ic = Vb/r
/ e
The ac collector voltage : Vc = IcRc
Since Ic Ie, the ac collector voltage : Vc IeRc
The ratio of Vc to Vb is the ac voltage gain : Av = Vc/Vb
Substituting IeRc for Vc and Iere for Vb : Av = Vc/Vb IcRc/Iere
The Ie terms cancel : Av Rc/re
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Ex 4-8
12
I C ( sat ) =
I B (min) =
I C ( sat )
DC
Ex 4-9 (a) For the transistor circuit in Figure, what is VCE when VIN = 0 V?
I C ( sat ) =
I B (min) =
10 V
VCC
=
= 10 mA
RC 1.0 k
I C ( sat )
DC
10 mA
= 50 A
200
RB (max) =
VR B
I B (min)
4 .3 V
= 86 k
50 A
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Troubleshooting
Opens in the external resistors or connections of the base or the circuit
collector circuit would cause current to cease in the collector and the
voltage measurements would indicate this.
IInternall opens within
i hi the
h transistor
i
itself could also cause transistor
operation to cease.
Erroneous voltage measurements that
are typically low are a result of point
that is not solidly connected. This
called a floating point. This is
typically indicative of an open.
More in-depth discussion of typical
failures are discussed within the
textbook.
Troubleshooting
Testing a transistor can be viewed more simply if you view it
as testing two diode junctions. Forward bias having low
resistance and reverse bias havingg infinite resistance.
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