Scribd Logo
Upload

Welcome to Scribd!

  • 136 views

    Assignment 4

    Uploaded by

    Shaheer Shahzad
    This document contains 9 questions regarding MOSFET devices and electronics. The questions cover topics such as calculating channel resistance for an NMOS transistor operated at different gate-source voltages, determining the region of operation for transistors in different circuits, and designing bias networks to operate transistors in saturation. Specific questions ask about how channel resistance, transconductance, and voltages at various nodes change with device parameters and operating conditions. The document provides necessary device parameters and circuit configurations to solve each question.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Assignment 4

    Uploaded by

    Shaheer Shahzad
    136 views5 pages
    This document contains 9 questions regarding MOSFET devices and electronics. The questions cover topics such as calculating channel resistance for an NMOS transistor operated at different gate-source voltages, determining the region of operation for transistors in different circuits, and designing bias networks to operate transistors in saturation. Specific questions ask about how channel resistance, transconductance, and voltages at various nodes change with device parameters and operating conditions. The document provides necessary device parameters and circuit configurations to solve each question.

    Original Description:

    Assignment 4

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document contains 9 questions regarding MOSFET devices and electronics. The questions cover topics such as calculating channel resistance for an NMOS transistor operated at different gate-source voltages, determining the region of operation for transistors in different circuits, and designing bias networks to operate transistors in saturation. Specific questions ask about how channel resistance, transconductance, and voltages at various nodes change with device parameters and operating conditions. The document provides necessary device parameters and circuit configurations to solve each question.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    136 views5 pages

    Assignment 4

    Uploaded by

    Shaheer Shahzad
    This document contains 9 questions regarding MOSFET devices and electronics. The questions cover topics such as calculating channel resistance for an NMOS transistor operated at different gate-source voltages, determining the region of operation for transistors in different circuits, and designing bias networks to operate transistors in saturation. Specific questions ask about how channel resistance, transconductance, and voltages at various nodes change with device parameters and operating conditions. The document provides necessary device parameters and circuit configurations to solve each question.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    Devices and Electronics

    Assignment 4
    Mosfets
    Q1.
    An NMOS transistor, fabricated with W = 100 m and L = 5 m in a technology for
    which kn' = 50 A/V2 and Vt = 1V, is to be operated at very low values of vDS as
    linear resistor. Calculate the value of channel resistance for two values of Vgs 1.1
    V and 11 V? You range of resistance would then be the difference between the
    two values that you have calculated.
    How does this range change if
    i.
    ii.

    the device width is halved?


    the device length is halved?

    Now Vgs is reduced to 0 V. What would be the channel resistance?


    Q2.
    Qs 5.57 from Sedra Smith 6th edition

    Q3.
    Determine qualitatively how the trans-conductance of a MOSFET(operating in
    saturation) changes if
    a)
    b)
    c)
    d)

    W/L is doubled but Id remains constant.


    Vgs-Vth is doubled but Id remains constant.
    Id is doubled but W/L remains constant.
    Id is doubled but Vgs-Vth remains constant.

    Q4.
    All the transistors in the circuits shown have the same values of Vt, k, W/L and
    lambda. Moreover, Lambda is negligibly small. All operate in saturation at Id=I
    and |Vgs|=|Vds|= 1V. Find the voltages at V1, V2, V3 and V4. If |Vt|=0.5 V and
    I=0.1mA, how large a resistor can be inserted in series with each drain connection
    while maintaining saturation? Attempt this question this for the 3 circuits shown
    below.

    Q5.
    Determine the region of operation of the transistors in each of the circuits shown
    below. Assume VTH = 0.4 V for NMOSdevices.

    Q6:
    For the Circuit shown below, calculate Vo. Vt=2V and k=1mA/(V^2). In order to
    solve this, you have to determine yourself if M1 and M2 are in saturation or linear
    region. Start by assuming something.

    Qs 7:
    A P channel Transistor for which |Vt| is 1v, |Va| is 50v, operates in saturation region with
    |Vgs| is 3v, Vds| is 4v and Id is 3mA. Find the signed values of the following

    Vgs
    Vsg
    Vds
    Vsd
    Va

    K(W/L)
    Vt

    Q8:
    For the circuit below, let RG = 10 Mohms and RD = 1O Kohmsand VDD = 10 V. For each of the
    following two transistors, findthe voltages VD and VG:
    (a) Vt=1 Vand k'nW/L = 0.5 mA/V2
    (b) Vt= 2 V and knW/L= 1.25 mA/V2

    Qs 9:
    For the Circuit below, using a 6-V supply with an NMOS transistor for which V, = 1.2 V, k'nW/L =
    3.2 mA/V2 and = 0, provide a design which biases the transistor at ID = 2 mA, with VDS large
    enough to allow saturation operation for a 2-V negative signal swing at the drain. Use 22 M
    ohm as the largest resistor in the feedback-bias network. What values of RD, RG1and RG2 have
    you chosen?

    Vdd

    RD

    10k

    10k

    RG1
    Q1
    NMOSFET

    RG2

    10k

    You might also like