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M1261S

This document provides specifications for TO-220F 12A Triac models TM1241S-L and TM1261S-L. Some key specifications include: - RMS on-state current rating of 12A - Repetitive peak off-state voltage ratings of 400V for the TM1241S-L and 600V for the TM1261S-L - Gate trigger current of 30mA maximum - Thermal resistance from junction to case of 70°C/W - On-state voltage between 1-2V over operating temperatures

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Marcos Rangel
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1K views

M1261S

This document provides specifications for TO-220F 12A Triac models TM1241S-L and TM1261S-L. Some key specifications include: - RMS on-state current rating of 12A - Repetitive peak off-state voltage ratings of 400V for the TM1241S-L and 600V for the TM1261S-L - Gate trigger current of 30mA maximum - Thermal resistance from junction to case of 70°C/W - On-state voltage between 1-2V over operating temperatures

Uploaded by

Marcos Rangel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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TO-220F 12A Triac

TM1241S-L, TM1261S-L
Features

External Dimensions

Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)


13.0 min

UL approved type available

4.20.2
C 0.5
2.8

0.2

10.00.2

4.0

3.90.2 0.80.2

16.90.3
8.40.2

RMS on-state current: IT(RMS)=12A


Gate trigger current: IGT=30mA max (MODE , ,

3.30.2

(Unit: mm)

Repetitive peak off-state voltage: VDRM=400, 600V

a
b
1.35

0.15

1.350.15
+0.2
0.85 0.1

2.54

2.54
0.2
2.2

2.4

+0.2
0.45 0.1

(1). Terminal 1 (T1)


(2). Terminal 2 (T2)
(3). Gate (G)

(1) (2) (3)

0.2

a. Part Number
b. Lot Number

Weight: Approx. 2.1g

Absolute Maximum Ratings


Parameter

Symbol

Ratings
TM1241S-L

TM1261S-L

400

600

Unit

Conditions

Repetitive peak off-state voltage

VDRM

RMS on-state current

IT(RMS)

12.0

Conduction angle 360, Tc=85C

Surge on-state current

ITSM

120

50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125C

Peak gate voltage

VGM

10

Peak gate current

IGM

Peak gate power loss

PGM

Average gate power loss

PG(AV)

0.5

Junction temperature

Tj

40 to +125

Storage temperature

Tstg

40 to +125

Isolation voltage

VISO

1500

Vrms

50Hz Sine wave, RMS, Terminal to Case, 1 min.

Electrical Characteristics
Parameter

Symbol

Off-state current

IDRM

On-state voltage

VTM

(Tj=25C, unless otherwise specified)

Ratings
min

typ

max

0.3

2.0
0.1
1.6

0.8
Gate trigger voltage

VGT

Unit

Conditions

mA

VD=VDRM, RGK=, Tj=25C

VD=VDRM, RGK=, Tj=125C

Pulse test, ITM=16A

0.7

2.0

0.8

2.0

VD=6V, RL=10, TC=25C

Gate trigger current

16

IGT

25

Holding current
Thermal resistance

42

VGD
IH
Rth

T2 , G
T2 , G

T2 , G

30
30
30

mA

VD=6V, RL=10, TC=25C

T2 , G
T2 , G
T2 , G

70
Gate non-trigger voltage

T2 , G

1.0
12

T2 , G

2.0

0.2

mA

20
3.0

C/W

VD=1/2VDRM, Tj=125C
VD=6V
Junction to case

TM1241S-L, TM1261S-L

Tj=25C

1.5

1.0

2.5

2.0

On-state voltage

3.0

100

80

IT(RMS) Tc Ratings

10

50

100

6
4

Ambient temperature Ta (C)

Case temperature TC (C)

Tj= 40C

Tj=25C
0

20 40 60 80

Gate trigger current


IGT (mA)

100

75

50
25

(Typical)

(VD=30V, RGK=)

100
Full-cycle sinewave
Conduction angle : 360
Self-supporting
Natural cooling
No wind

125

iGF (A)

IH temperature Characteristics

150
Full-cycle sinewave
Conduction angle :360

125

10

Gate current

IT(RMS) Ta Ratings

150

12

0
5

Number of cycle

14

See graph at the upper right

Full-cycle sinewave
Conduction angle :360

40

3.5

18

50

100
75

50

(T2 T1 )

( T2 T1 )
10

25

2
8

10

12

14

0
0

10

12

14

Pulse trigger temperature Characteristics

103

1.0

0.5
0.5 1

103

1.5

0.2
0.5 1

10 2

10

Pulse width

0.5
0.5 1

103

Tj= 40C
20C
tw
0C
25C
50C
75C
100C
125C

10
5

1
0.5

0.2
0.5 1

10 2

10

Pulse width

103

0.8
0.6
0.4
0.2

25

50

75

100

125

1
0.5

0.2
0.5 1

10

40

25

50

75

10 2

10

100

Junction temperature Tj (C)

125

103

t w (s)

Transient thermal resistance


Characteristics
100

rth (C/W)

(T2, G )
(T2+, G )
(T2+, G+ )

1
0

Junction temperature Tj (C)

Transient thermal resistance

Gate trigger current IGT (mA)

1.0

(VD=6V, RL=10)

MODE
MODE
MODE

10

Pulse width

(Typical)
50

igt

Tj= 40C
20C
tw
0C
25C
50C
75C
100C
125C

t w (s)

IGT temperature characteristics

(T2,G )
(T2+,G+ )
(T2+,G )

103

(MODE )

(Typical)
MODE
MODE
MODE

10 2

10

30

VGT temperature characteristics


1.2

125

Pulse width tw (s)

igt

t w (s)

(VD=6V, RL=10)

100

1.0

trigger current
igt (Gate
)
at Tj and tw

(
i

10 2

10

)
(

trigger current
igt (Gate
)
at Tj and tw

1
0.5

75

Tj= 40C
vgt
20C
0C
tw
25C
50C
75C
100C
125C

(MODE )
gate trigger
IGT DC
current at 25C

)
5

10

50

1.5

30
Tj= 40C
tw
20C
0C
25C
50C
75C
100C
125C

25

igt (Typical)

30

igt

Junction temperature Tj (C)

(MODE )

vgt
Tj= 40C
20C
0C
tw
25C
50C
75C
100C
125C

(MODE )
gate trigger
IGT DC
current at 25C

2
40

3.0

Pulse width tw (s)

Pulse trigger temperature Characteristics

gt Gate trigger current


at Tj and tw

2.5

2.0

2.0

Pulse width tw (s)

0
40

2.0

trigger voltage
vgt ( Gate
)
at Tj and tw

)
(

gate trigger
VGT DC
voltage at 25C

trigger voltage
vgt ( Gate
)
at Tj and tw

)
)

gate trigger
VGT DC
voltage at 25C
gt Gate trigger voltage
at Tj and tw

10 2

10

1.5

(MODE )

1.0

0.5
0.5 1

1.0

vgt (Typical)

Tj= 40C
vgt
20C
0C
tw
25C
50C
75C
100C
125C

1.5

0.5

RMS on-state current IT(RMS) (A)

(MODE )
2.0

RMS on-state current IT(RMS) (A)

gate trigger
VGT DC
voltage at 25C

RMS on-state current IT(RMS) (A)

gate trigger
IGT DC
current at 25C

Gate trigger voltage VGT (V)

60

vT ( V )

IT(RMS) PT(AV) Characteristics


16

vGF (V)

120

Holding current IH (mA)

0.5
0.5

10

10 ms
1cycle

Gate voltage

Surge on-state current ITSM (A)

iT (A)
On-state current

10

140

W
=5
P GM

Tj=125C

12

Initial junction temperature


Tj=125C
ITSM

Tj= 20C

160

50

Average on-state power PT(AV) (W)

Gate Characteristics

ITSM Ratings

100

Gate trigger voltage VGT (V)

vT iT Characteristics (max)

Junction to
operating
environment
10

Junction to
case
1

0.1
0.1

10

10 2

10 3

10 4

10 5

t, Time (ms)

43

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