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Impact College of Engineering & Applied Sciences Kodigehalli Post, Bangalore - 560 092 Question Paper - Internal Assessment No. 3

This document contains instructions and questions for an internal assessment exam for a Fundamentals of CMOS VLSI course. The exam contains 3 questions worth a total of 25 marks and lasts 1 hour. Question 1 is worth 10 marks and asks students to explain a 3-transistor dynamic RAM cell. Question 2 is worth 10 marks and asks students to explain the write and read operations of 4T dynamic and 6T static CMOS memory cells. Question 3 is worth 5 marks and asks students to explain a 1T dynamic memory cell using a 3-plate capacitor.

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55 views

Impact College of Engineering & Applied Sciences Kodigehalli Post, Bangalore - 560 092 Question Paper - Internal Assessment No. 3

This document contains instructions and questions for an internal assessment exam for a Fundamentals of CMOS VLSI course. The exam contains 3 questions worth a total of 25 marks and lasts 1 hour. Question 1 is worth 10 marks and asks students to explain a 3-transistor dynamic RAM cell. Question 2 is worth 10 marks and asks students to explain the write and read operations of 4T dynamic and 6T static CMOS memory cells. Question 3 is worth 5 marks and asks students to explain a 1T dynamic memory cell using a 3-plate capacitor.

Uploaded by

anittadevadas
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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IMPACT COLLEGE OF ENGINEERING & APPLIED SCIENCES

Kodigehalli Post, Bangalore 560 092


Question Paper - Internal Assessment No. 3
Branch
Semester
Subject Code
Subject Name

Electronics & Communication Engineering


V
10EC56
Fundamentals of cmos vlsi

Date
Time
Duration
Max Marks

7.11.2015
12.00 pm -1.00pm
1 hour
25

Instructions to Candidates
a. Write clearly your name, USN on the cover page and the index page of the blue book
b. Answer all questions

ANSWER ALL QUESTIONS


1. Explain 3-Transistor dynamic RAM-cell

10 Marks

2. Explain write operation, read operation for four transistor dynamic and six transistor static
CMOS memory cell.
3.Explain one transistor dynamic memory cell emphasing three plate capacitor

10 Marks
5Marks

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