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Descriptions: S e M I C o N D U C T o R

The 2N3904 is an NPN silicon transistor intended for general small signal and switching applications. It has features such as low collector saturation voltage and collector output capacitance. The transistor comes in a standard TO-92 package and has electrical characteristics including a current gain of 100-300, transition frequency of 300 MHz, and collector saturation voltage below 0.3V at 50mA collector current.

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69 views4 pages

Descriptions: S e M I C o N D U C T o R

The 2N3904 is an NPN silicon transistor intended for general small signal and switching applications. It has features such as low collector saturation voltage and collector output capacitance. The transistor comes in a standard TO-92 package and has electrical characteristics including a current gain of 100-300, transition frequency of 300 MHz, and collector saturation voltage below 0.3V at 50mA collector current.

Uploaded by

tirucatalin
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Semiconductor 2N3904

NPN Silicon Transistor

Descriptions
• General small signal application
• Switching application

Features
• Low collector saturation voltage
• Collector output capacitance
• Complementary pair with 2N3906

Ordering Information
Type NO. Marking Package Code

2N3904 2N3904 TO-92

Outline Dimensions unit : mm

3.45±0.1
4.5±0.1
2.25±0.1
4.5±0.1

0.4±0.02
2.06±0.1
14.0±0.40

1.27 Typ.

2.54 Typ.

1 2 3

PIN Connections
1.20±0.1

1. Emitter
0.38

2. Base
3. Collector

KST-9010-000 1
2N3904
Absolute maximum ratings Ta=25°°C
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 60 V
Collector-Emitter voltage VCEO 40 V
Emitter-base voltage VEBO 6 V
Collector current IC 200 mA
Collector dissipation PC 625 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg -55~150 °C

Electrical Characteristics Ta=25°°C


Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-Base breakdown voltage BVCBO IC=10µA, IE=0 60 - - V
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V
Emitter-Base breakdown voltage BVEBO IE=10µA, IC=0 6 - - V
Collector cut-off current ICEX VCE=30V, VEB=3V - - 50 nA
DC current gain hFE VCE=1V, IC=10mA 100 - 300 -
Collector-Emitter saturation voltage VCE(sat) IC=50mA, IB=5mA - - 0.3 V
VCE=20V, IC=10mA,
Transition frequency fT 300 - - MHz
f=100MHz
Collector output capacitance Cob VCB=5V, IE=0, f=1MHz - - 4 pF
Delay time td VCC=3Vdc, VBE(off)=0.5Vdc. - - 35 ns
Rise time tr IC=10mAdc, IB1=1mAdc - - 35 ns
Storage time ts VCC=3Vdc,IC=10mAdc, - - 200 ns
Fall Time tf IB1=IB2=1mAdc - - 50 ns

KST-9010-000 2
2N3904
Electrical Characteristic Curves

Fig. 1 PC-Ta Fig. 2 hFE-IC

Fig. 3 VCE(sat)-IC

KST-9010-000 3
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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