Scribd Logo
Upload

Welcome to Scribd!

  • 14 views

    g308008 BC847 SOT23 Hottech

    Uploaded by

    Silvia Resa Delgado
    This document provides information on plastic-encapsulated NPN transistors, including the BC846A/B, BC847A/B/C, and BC848A/B/C models. It lists maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and collector power dissipation. Electrical characteristics are also specified, such as breakdown voltages, current gains, saturation voltages, and transition frequency. The transistors are suitable for general audio frequency applications and feature high collector current, high current gain, and low saturation voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    g308008 BC847 SOT23 Hottech

    Uploaded by

    Silvia Resa Delgado
    14 views3 pages
    This document provides information on plastic-encapsulated NPN transistors, including the BC846A/B, BC847A/B/C, and BC848A/B/C models. It lists maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and collector power dissipation. Electrical characteristics are also specified, such as breakdown voltages, current gains, saturation voltages, and transition frequency. The transistors are suitable for general audio frequency applications and feature high collector current, high current gain, and low saturation voltage.

    Original Description:

    Datasheet BC847

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides information on plastic-encapsulated NPN transistors, including the BC846A/B, BC847A/B/C, and BC848A/B/C models. It lists maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and collector power dissipation. Electrical characteristics are also specified, such as breakdown voltages, current gains, saturation voltages, and transition frequency. The transistors are suitable for general audio frequency applications and feature high collector current, high current gain, and low saturation voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views3 pages

    g308008 BC847 SOT23 Hottech

    Uploaded by

    Silvia Resa Delgado
    This document provides information on plastic-encapsulated NPN transistors, including the BC846A/B, BC847A/B/C, and BC848A/B/C models. It lists maximum ratings for collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and collector power dissipation. Electrical characteristics are also specified, such as breakdown voltages, current gains, saturation voltages, and transition frequency. The transistors are suitable for general audio frequency applications and feature high collector current, high current gain, and low saturation voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 3

    Plastic-Encapsulate Transistors

    FEATURES

    BC846A/B (NPN)
    BC847A/B/C (NPN)
    BC848A/B/C (NPN)

    For general AF applications


    High collector current
    High current gain
    Low collector-emitter saturation voltage

    Marking
    BC846A

    BC846B

    1A

    1B

    BC847C

    BC848A

    1G

    1J

    BC847A
    1E

    BC848B
    1K

    BC847B
    1F

    BC848C

    1. BASE

    1L

    2. EMITTER

    SOT-23

    3. COLLECTO

    MAXIMUM RATINGS (TA=25

    unless otherwise noted)

    Parameter

    Symbol

    Value

    Unit
    V

    BC846

    VCBO

    80

    BC847

    VCBO

    50

    BC848

    VCBO

    30

    BC846

    VCEO

    65

    BC847

    VCEO

    45

    BC848

    VCEO

    30

    VEBO

    Collector Current -Continuous

    IC

    -0.1

    Collector Power Dissipation

    PC

    0.2

    Junction Temperature

    TJ

    150

    Storage Temperature

    Tstg

    -55 to +150

    Collector-Base Voltage

    Collector-Emitter Voltage

    Emitter-Base Voltage

    GUANGDONG HOTTECH

    INDUSTRIAL CO,. LTD.

    Page:P3-P1

    Plastic-Encapsulate Transistors
    ELECTRICAL CHARACTERISTICS (Tamb=25

    unless otherwise specified)

    Parameter

    Symbol

    Collector-base breakdown voltage

    Test conditions

    BC846
    BC847

    IC= 10A, IE=0

    Collector cut-off current

    30

    VCEO
    VEBO

    BC846
    BC847

    ICBO

    BC848
    Collector cut-off current

    BC846
    BC847

    ICEO

    BC848
    IEBO

    Emitter cut-off current


    DC current gain

    IC= 10mA, IB=0

    45

    IE= 10A, IC=0


    VCB=70 V ,

    IE=0

    VCB=50 V ,

    IE=0

    VCB=30 V ,

    IE=0

    VCE=60 V ,

    IB=0

    VCE=45 V ,

    IB=0

    VCE=30 V ,
    VEB=5 V ,

    hFE

    VCE= 5V,

    30

    IB=0
    IC=0

    BC846A,847A,848A
    BC846B,847B,848B

    Unit

    65

    BC848
    Emitter-base breakdown voltage

    Max

    50

    BC846
    BC847

    Typ

    80
    VCBO

    BC848
    Collector-emitter breakdown voltage

    Min

    IC= 2mA

    BC847C,BC848C

    0.1

    0.1

    0.1

    110

    220

    200

    450

    420

    800

    Collector-emitter saturation voltage

    VCE(sat)

    IC=100mA, IB= 5mA

    0.5

    Base-emitter saturation voltage

    VBE(sat)

    IC=100mA, IB= 5mA

    1.1

    fT

    Transition frequency

    f=100MHz

    Collector output capacitance

    BC846A/B
    BC847A/B/C
    BC848A/B/C

    VCE= 5 V, IC= 10mA

    Cob

    VCB=10V,f=1MHz

    100

    MHz
    4.5

    pF

    Typical Characteristics

    GUANGDONG HOTTECH

    INDUSTRIAL CO,. LTD.

    Page:P3-P2

    Plastic-Encapsulate Transistors

    BC846A/B
    BC847A/B/C
    BC848A/B/C

    Typical Characteristics

    GUANGDONG HOTTECH

    INDUSTRIAL CO,. LTD.

    Page:P3-P3

    You might also like