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KT E N N N:) 2 Exp K 300 (

The intrinsic carrier density was calculated for germanium, silicon, and gallium arsenide at temperatures of 300K, 400K, 500K, and 600K. The intrinsic carrier density in silicon at 300K was calculated to be 8.72 x 109 cm-3 using the intrinsic carrier density equation. The calculated intrinsic carrier densities for each material at each temperature were then listed in a table.

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M Jameel Mydeen
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76 views1 page

KT E N N N:) 2 Exp K 300 (

The intrinsic carrier density was calculated for germanium, silicon, and gallium arsenide at temperatures of 300K, 400K, 500K, and 600K. The intrinsic carrier density in silicon at 300K was calculated to be 8.72 x 109 cm-3 using the intrinsic carrier density equation. The calculated intrinsic carrier densities for each material at each temperature were then listed in a table.

Uploaded by

M Jameel Mydeen
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Example

2.4b
Solution

Calculate the intrinsic carrier density in germanium, silicon and


gallium arsenide at 300, 400, 500 and 600 K.
The intrinsic carrier density in silicon at 300 K equals:
Eg
n i (300 K ) = N c N v exp(
)
2 kT
1.12
= 2.81 1019 1.83 1019 exp(
)
2 0.0258
= 8.72 109 cm -3
Similarly one finds the intrinsic carrier density for germanium and
gallium arsenide at different temperatures, yielding:
Germanium
Silicon
Gallium
Arsenide
300 K
2.02 x 1013
8.72 x 109
2.03 x 106
15
12
400 K
1.38 x 10
4.52 x 10
5.98 x 109
500 K
1.91 x 1016
2.16 x 1014
7.98 x 1011
17
15
600 K
1.18 x 10
3.07 x 10
2.22 x 1013

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