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SOT-23 Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD

This document provides information on a plastic-encapsulated PNP transistor called the A1015 from Jiangsu Changjiang Electronics Technology Co. It lists the transistor's key features as having high voltage, high current, excellent hFE linearity, and low noise. The document then provides tables of the transistor's maximum ratings and electrical characteristics, specifying parameters like collector-base breakdown voltage, current gain, and transition frequency.

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80 views2 pages

SOT-23 Plastic-Encapsulate Transistors: Jiangsu Changjiang Electronics Technology Co., LTD

This document provides information on a plastic-encapsulated PNP transistor called the A1015 from Jiangsu Changjiang Electronics Technology Co. It lists the transistor's key features as having high voltage, high current, excellent hFE linearity, and low noise. The document then provides tables of the transistor's maximum ratings and electrical characteristics, specifying parameters like collector-base breakdown voltage, current gain, and transition frequency.

Uploaded by

virus101
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

SOT-23
A1015

TRANSISTOR

Plastic-Encapsulate Transistors

(PNP)
SOT-23

FEATURES
High voltage and high current
Excellent hFE Linearity
Low niose
Complementary to C1815

z
z
z
z

1. BASE
2. EMITTER
3. COLLECTOR

MARKING: BA

MAXIMUM RATINGS (TA=25 unless otherwise noted)


Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-50

VCEO

Collector-Emitter Voltage

-50

VEBO

Emitter-Base Voltage

-5

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

200

mW

TJ

Junction Temperature

125

Tstg

Storage Temperature

-55-125

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


Symbol

Parameter

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100u A, IE=0

-50

Collector-emitter breakdown voltage

V(BR)CEO

IC= -0.1mA, IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO

IE= -100 u A, IC=0

-5

Collector cut-off current

ICBO

VCB=-50V ,

IE=0

-0.1

uA

Collector cut-off current

ICEO

VCE= -50V ,

IB=0

-0.1

uA

Emitter cut-off current

IEBO

VEB=- 5V,

IC=0

-0.1

uA

VCE=-6V,

IC= -2mA

hFE

DC current gain

130

400

Collector-emitter saturation voltage

VCE(sat)

IC=-100 mA, IB= -10mA

-0.3

Base-emitter saturation voltage

VBE(sat)

IC=-100 mA, IB= -10mA

-1.1

fT

Transition frequency

CLASSIFICATION
Rank
Range

OF

VCE=-10V, IC= -1mA


f=30MHz

80

MHz

hFE
L

130-200

200-400

Typical Characteristics

A1015

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