Chapter 1
Chapter 1
MULTISTAGE AMPLIFIER
Hybrid model
Hybrid
B
ib
rx
r
ib
ro = rce
Transconductance
Transconductance
parameter
ro
Currentgain
parameter
rx :basespreadingresistance,rbb
bb (40 400)
r :dynamicjunctionresistance
T
V
r =
ICQ
ICQ
gm =
VT
r =
gm
R i off single-stage
Review
i gl t g amplifier
lifi
y Common Base (CB)
( )
Small-signal
Small
signal
equivalent
circuit
Review of single-stage
g
g amplifier
p
Sm
mall-sign
nal
equivalen
e
nt
circuit
Review of single
single-stage
stage amplifier
y Common Collector (CC)
( )
Small-signal
equivalent
circuit
5
M lti t
MultistageAmplifier
A lifi
y Multistageamplifierconsistsoftwoormore
Multistage amplifier consists of two or more
amplifierscascadedorcascodedtoforma
single amplifier with the desired characteristic
singleamplifierwiththedesiredcharacteristic
y IndiscreteformitcouldbeBJTBJT,BiFET,FET
FET or some other combinations
FETorsomeothercombinations
y InICdesignitsalwaysbeacombinationsof
singletypeoftransistors
i l t
ft
it
Purposesofmultistage
1. Increasingthegainbeyondthesingle
g
p
g
stageamplifiergain
2. Modifyingtheimpedanceparameter
amplifiers
2 BiFET cascadeforagoodlinearamplifier
2.
cascade for a good linear amplifier
3. Darlingtonpair forahighcurrentgain
amplifier
lifi
4. DifferentialAmplifier forgoodCMRRat
theinputofthesystem
Coupling
p g
y
y
Purpose:Thecircuitryusedtoconnecttheoutputofone
stage to the input of the next stage in multistage amplifier
stagetotheinputofthenextstageinmultistageamplifier
Typesofcoupling:
1. Capacitivecoupling/RCcoupling
Adv toblocktheflowofdccurrent
Disadv Itaffectsthelowerfrequencyresponseofthe
amplifier
p
2. Directcoupling
Adv reductioninthenumberofcomponents
3 Transformercoupling
3.
Transformer coupling
Adv lowpowerdissipation
Disadv poorfrequencyresponsecharacteristics
4. Opticalcoupling
Cascade Connections
CascadeConnections
y Cascadeconnectionsprovidesstagesinseries
Cascade connections provides stages in series
whichisapopularconnection.
y Theoutputofoneamplifierstageisconnected
The output of one amplifier stage is connected
totheinputofanotheramplifierstages.
y Thereare2types:
Th
2t
1.BJT&BJT
2.BiFET
10
33K
2K0
33K
2K0
Co
Vo
1K0
Cc1
Q1
Vs
11
15K
820R
Q2
CE1 15K
820R
CE2
DC analysis
DCanalysis
CheckforR
E 10R2
RE =150(820)=123k and
10R2 =150k
150k
unsatisfiedcondition
useexactapproach
12
DCanalysis(contd)
VTH1
R2
VCC = 6.25 V
=
R1 + R 2
VTH1 VBE
= 41.38 A
IB1 =
R TH1 + ( + 1)RE
IC1 =
IB1 = 6.207mA = IC2
VT (150)(26 mV )
r =
=
= 628.32
ICQ
6.207mA
13
AC
ACequivalentcircuit
i l t i it
Ib1
1k
Ib2
Vi1
Vo1 Vi2
VS
33k
||15k
r1
1st stage
14
1Ib1
2k
Vo2
2Ib2
33k
||15k
r2
2nd stage
2k
AC analysis
ACanalysis
2nd
stage
Vi1 = r11Ib1
Vo2 = 2Ib2
b (2k )
Vo2 2 (2k )
=
= 477.5
A v2 =
Vi2
r
Total gain
15
Vi2 = r2Ib2
A vT = A v1 A v2 = 52095.25
GvT = 20log10 A vT = 94.3 dB
+20V
R3
8K
R4
6K
Vo
Cc
Q1
Vs
16
R2
15K
RE1
1K0
Q2
CE1
RE2
2K0
CE2
DCanalysis
VTH1
1st stage
R2
=
R1 + R 2
VTH1 VBE
IB1 =
= 7.31A IC1 = IB1 = 0.731mA
RTH1 + ( + 1)RE1
1 VT (100)(26 mV
V)
r1 =
=
= 3.56 k
0.731mA
IC1
IE2 =
2nd stage
17
CheckforRE 10R2
RE =100(1k)=100k
( )
and
10R2 =150k
2 VT (100)(26 mV )
r2 =
=
= 386.33k
IC2
6.73mA
AC equivalent circuit
ACequivalentcircuit
Ib2
Ib1
Vi1
Vo1 Vi2
r1
Ib1
1st stage
g
18
Vo2
r2
Ib2
2nd stage
ACanalysis
y
Vi1 = r1Ib1
Vo1
A v1 =
Vi1
A v1 =
Vo2
A v2 =
Vi2
[R3 r2 ]
r1
(100)[8k 386.33k]
3.56k
Vi2 = r2Ib2
Vo2 = R 4Ib2
(
R4
100)6k
A v2 =
=
= 1.55
r22
386.33k
19
A vT = A v1 A v2 = 341.25
= 220.16
Exercise 1
Exercise1
Forthecircuitinfigurebelow,obtainAv1 andAv2.Assumefor
bothtransistors:=100,VBE=0.7V,ro =
20
Exercise2
Forthecircuitinfigurebelow,obtainAv1,Av2.
Assumeforbothtransistor:=100,VBE=0.7V,ro =
21
BIFET amplifier
BIFETamplifier
y AcombinationofbipolarandFET
p
y Theseamplifiersaredesignedtoexploitthe
mostdesirablecharacteristicsofeach
most
desirable characteristics of each
devicesuchastheverylargeinput
impedance of FET and the large voltage
impedanceofFETandthelargevoltage
gainoftheBJT
22
23
DC analysis
DCanalysis
ID = k(VGSQ VT )2 = 0.55m(6.2 3)2 = 5.63mA
1st stage
2nd stage
IC = IE2 = 4.72mA
(VT ) (100)(26m)
=
= 550.85
r2 =
IC
4 72m
4.72m
g m = 2k (VGS Q VT ) = 2(0.55m)(6.2 3) = 3.52mS
24
ACanalysis
y
acequivalentcircuit
Ib
ii)
iii)
Z i = 6.8M//10M = 4M
Z o = 3.9k
Vi2 = Ib r + Ie RE2 = Ib r + IbRE2 = Ib (r + RE2 )
Zb =
i )
iv)
25
Vi2
= r + RE2 = 550.85 + (100)1k = 100.55k
Ib
Av 1 =
g V (3.3k//100.55k)
Vo1
= m gs
= 11.25
Vi1
Vgs
Av 2 =
I (3.9k)
(3 9k) 100 (3.9k)
Vo2
(3 9k)
= b
=
= 3.88
Vi2
Ib Z b
100.55k
Exercise3
FigureshowsaDEMOSFETamplifiercoupledtoaCEamplifierconfiguration.
Theparametersareasfollows:VP = 4V,IDSS =10mA,2 =200andVBE =0.7V.
D
Determine:
i
i)
Draincurrent(ID)andcollectorcurrent(IC)
ii)
Inputimpedance,Zi
iii)
Output impedance Zo
Outputimpedance,Z
iv)
Theoverallvoltagegain,AVT
20V
5K6
2K2
C4
Vo
1k
C1
Q1
Q2
10K0
Vs
26
3M3
680R
C2
820R
C3
CascodeConnections
y Acascodeconnectionhasonetransistorontopof
anotherwhereacommonemittertransistordrivesa
commonbasetransistor.
y Itisdesignedtoprovideahighinputimpedancewith
lowgain.
y Itprovideswidebandwidthandsuitableforhigh
It
id
id b d idth d it bl f hi h
frequencyamplifiers.
27
C
CascodeAmplifier(CECBconfiguration)
d A lifi (CE CB
fi
ti )
+15V
R1
47k
RC
2.7k
Cc
CB1
Q2
Vo
Q1
Vs
28
R2
8.2k
R3
15k
+15V
RE1
1k
CE1
R4
15k
CB2
RL
10k
AC
ACequivalentcircuit
i l t i it
gm2V2
Vo2
+
V1
gm1V1
r1
V2
r2
Zin
Zout
1st stage
t
29
2nd stage
ACanalysis
y
KCL equation
ti
att node
d E2 :
V1 = Vs
V2
g m1 Vs =
+ g m2 V2
r2
r2
g m1 Vs
V2 =
1 + 2
2 = g m2r2
Vo = (gm2 V2 )(RC RL )
r2
(RC RL ) Vs
Vo = g m1g m2
1 + 2
Small-signal
voltage gain :
30
Av =
r
Vo
= g m1g m2 2 (RC RL )
Vs
1 + 2
r22
2
g m2
=
1
1 + 2 1 +2
A v gm1 (RC RL )
Exercise4
Figure showsacascodeamplifier.Giventhat1 =2 =3 =150,VT =26mV
andthecurrent,IE,flowingthroughresistorRE is2mA.Withreferenceto
the diagram, draw its small signal equivalent circuit and compute the
thediagram,drawitssmallsignalequivalentcircuitandcomputethe
+15V
following:
i)Inputimpedance,Zin
ii)Outputimpedance,Zout
R
R
47k0
3k9
iii)Overallvoltagegain,AVS
1
10 F
VO
10 F
Q2
rbbverysmallandrce=
rbb
very small and rce =
RS
600R
RL
10k0
R2
33k0
10 F
Q1
Zout
Vs
R3
15k0
31
Zin
RE
1k0
IE
100 F
Darlington Pair
DarlingtonPair
32
Apairofsimilartransistors
whichtheircollectorsaretied
hi h h i
ll
i d
together
Emitter of one transistor directly
Emitterofonetransistordirectly
joinedtothebaseoftheother
Commerciallymountedina
singlepackagethathasonly
l
k
h h
l
threeleads
super
superbeta
betatransistor
transistor
IC
IC1
IC2
IB
IB2= IE1
IE
IC
IC1
IC2
IB
IB2= IE1
IE
Substitute(2)and(3)into(1)
IC = 1IB1 + (21 + 2 )IB1
IC
= DP = 1 + 12 + 2 12
IB1
since
12 1 + 2
DP 12
33
ac equivalent circuit
acequivalentcircuit
V1 = Iir1
V2 = (Ii + 1Ii )r2
Ii
+
gm1V1
V1
+
V2
-
gm2V2
g m2r2 = 2
Io = g m1 V1 + g m2 V2 = 1Ii +2 (1 + 1 )Ii
Io
A i = = 1 + 2 (1 + 1 ) 12 = DP
Ii
34
acequivalentcircuit
Ii
Vo
V1
Vi
gm1V1
Z i = r1 + r2 (1 + 1 )
+
-
gm2V2
V2
-
riDP
1 VT
r1 =
ICQ1
ICQ1
2 VT
= 1r2
r1 = 1
ICQ2
DPIb
35
Vi = V1 + V2 =Ii r1 + r2 (1 + 1 )Ii
riDP 21r2
ICQ 2
2
Example : Darlington
Example:Darlington
ForthedarlingtoncircuitinFigure,calculate:
a)) Thedccurrents
b) Theinputimpedance,Zin &outputimpedance,Zo
c) Voltagegain,Av
Given:
1=
2=200,VT=26mV,ro =75k
k
36
DCanalysis
a)ApplyKVLatloop1:
IE = (DP + 1)IB
(
200)26m
=
= 1.26k
riDP
37
4.12m
= 2
1r2
= 2(200)(1.26k) = 504k
ACanalysis
y
RS
Vo
Vi
RB
DPIb
riDP
ro
RL
VS
Zin
Zout
Z in = RB //r
// iDP = 2.686k
k
Z out = ro = 75k
Av =
38
= 700
Exercise 5
Exercise5
ForthedarlingtoncircuitinFigure,calculate:
a) Currentgain,A
Current gain Ai
b) Voltagegain,Avs
Given:1=2=100,VT=26mV,ro =
+20V
1k2
330k
560R
C1
Q1
Q2
Vs
110k
Vo
560R
39
C2