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Spring 07 - EE 221 Problem Set 3

This document contains 4 problems related to ion implantation in silicon wafers: 1) A boron dose is implanted and the projected depth and straggle must be calculated from a figure, as well as the junction depth assuming a Gaussian profile. 2) An arsenic dose is implanted through a silicon dioxide layer and the required thickness of a silicon nitride barrier layer is calculated. 3) A phosphorus dose is implanted and the projected depth and straggle must be calculated from the figure, as well as the junction depth assuming a Gaussian profile. 4) A composite profile from two boron implantations is drawn and the junction depths are found, then the doses of the two implant steps are calculated.

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106 views

Spring 07 - EE 221 Problem Set 3

This document contains 4 problems related to ion implantation in silicon wafers: 1) A boron dose is implanted and the projected depth and straggle must be calculated from a figure, as well as the junction depth assuming a Gaussian profile. 2) An arsenic dose is implanted through a silicon dioxide layer and the required thickness of a silicon nitride barrier layer is calculated. 3) A phosphorus dose is implanted and the projected depth and straggle must be calculated from the figure, as well as the junction depth assuming a Gaussian profile. 4) A composite profile from two boron implantations is drawn and the junction depths are found, then the doses of the two implant steps are calculated.

Uploaded by

Mt Rush
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 221

Problem Set 3

Problem 1:

A measured boron does of 2 1015 / cm 2 is implanted into the surface of a silicon wafer at an
energy of 10 keV . What are the projected depth and straggle based upon below figure? What is
the junction depth if the implantation resulted in a Gaussian profile and the background
concentration of the wafer is 1016 cm3 ?

Problem 2:

An arsenic dose of 1 1012 cm 2 is implanted through a 50-nm layer of silicon dioxide with the
peak of the distribution at the Si SiO2 interface, A silicon nitride film on top of the silicon
dioxide is to be used as a barrier material in the regions where arsenic is not desired. How thick
should the nitride layer be if the background concentration is 1 1015 cm3
Problem 3:

A phosphorus dose 1 1015 / cm 2 is implanted into the surface of a silicon wafer at an energy of
20keV . What are the projected depth and straggle based upon provided figure in problem 1?
What is the junction depth if the implantation resulted in a Gaussian profile and the background
concentration of the wafer is 1016 cm3 ?
Problem 4:

An implanted profile is formed by two boron implantations. The first uses an energy of 100keV
and the second an energy of 200keV . The peak concentration of each distribution 5 1018 cm3 .
Draw a graph of the composite profile and find the junction depth(s) if the phosphorus
background concentration is 1016 cm3 . What are the doses of the two implant steps?

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