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CMPSH1 Power Transisitor

The UTC MPSH10 is a high voltage NPN epitaxial silicon transistor designed for use as an oscillator and mixer in television receivers operating in the VHF and UHF bands. It is packaged in a TO-92 case and has absolute maximum ratings of 30V for collector-base voltage, 25V for collector-emitter voltage, 3V for emitter-base voltage, and a junction temperature of 150°C. Its typical electrical characteristics include a collector-base breakdown voltage of 30V, collector-emitter breakdown voltage of 25V, DC current gain of 60, and current gain bandwidth product of 650MHz.

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58 views1 page

CMPSH1 Power Transisitor

The UTC MPSH10 is a high voltage NPN epitaxial silicon transistor designed for use as an oscillator and mixer in television receivers operating in the VHF and UHF bands. It is packaged in a TO-92 case and has absolute maximum ratings of 30V for collector-base voltage, 25V for collector-emitter voltage, 3V for emitter-base voltage, and a junction temperature of 150°C. Its typical electrical characteristics include a collector-base breakdown voltage of 30V, collector-emitter breakdown voltage of 25V, DC current gain of 60, and current gain bandwidth product of 650MHz.

Uploaded by

Yuvaraja
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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UTC MPSH10

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR


DESCRIPTION
The UTC MPSH10 is desinged for using as VHF and
UHF oscillators and VHf Mixer in a tuner of a TV
receiver.
1

TO-92

1: EMITTER 2:BASE 3:COLLECTOR

ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER

SYMBOL

RATING

UNIT

VCBO
VCEO
VEBO
Pc
Ic
Tj
TSTG

30
25
3
250
50
150
-55 ~ +150

V
V
V
mW
mA
C
C

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation(Ta=25C)
Collector current
Junction Temperature
Storage Temperature

ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified)


PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-base breakdown voltage


Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Collector-emitter on voltage
DC current gain
Output capacitace
Current gain bandwidth product

BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VCE(ON)
hFE
Cob
fT

Ic=100A
Ic=1mA
IE=10A
VCB=25V
VEB=2V
IC=4mA,IB=400A
VCE=10V,IC=4mA
VCE=10V,IC=4mA,f=100MHZ
VCE=10V,f=1MHZ
VCE=10V,IC=4mA,f=100MHZ

30
25

UTC

TYP

MAX

UNIT

3
100
100
500
950

V
V
V
nA
nA
mV
mV

60
0.7
650

UNISONIC TECHNOLOGIES CO. LTD

pF
MHZ

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