Scribd
Upload
164 views2 pages

Tip 35

This document provides specifications for the TIP35 and TIP36 series complementary silicon power transistors manufactured by Central Semiconductor. It lists the maximum ratings, electrical characteristics, and mechanical outline for the NPN and PNP transistors. The transistors are designed for high current amplifier and switching applications with continuous collector currents up to 25A and voltage ratings from 40-100V.

Uploaded by

MasErn
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
164 views2 pages

Tip 35

This document provides specifications for the TIP35 and TIP36 series complementary silicon power transistors manufactured by Central Semiconductor. It lists the maximum ratings, electrical characteristics, and mechanical outline for the NPN and PNP transistors. The transistors are designed for high current amplifier and switching applications with continuous collector currents up to 25A and voltage ratings from 40-100V.

Uploaded by

MasErn
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 2

TIP35 TIP35A TIP35B TIP35C

TIP36 TIP36A TIP36B TIP36C

NPN
PNP

COMPLEMENTARY
SILICON POWER TRANSISTORS

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:
The CENTRAL SEMICONDUCTOR TIP35 and TIP36
series devices are complementary silicon power
transistors manufactured by the epitaxial base process,
designed for high current amplifier and switching
applications.

MARKING: FULL PART NUMBER


TO-218 TRANSISTOR CASE

MAXIMUM RATINGS: (TC=25C)


Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance

TIP35
SYMBOL TIP36
VCBO
40
VCEO
40
VEBO
IC
ICM
IB

TIP35A TIP35B TIP35C


TIP36A TIP36B TIP36C
60
80
100
60

80

100

UNITS
V
V

5.0

25

40

5.0

PD
TJ, Tstg

125

-65 to +150

JC

1.0

C/W

ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)


SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=30V (TIP35, TIP35A, TIP36, TIP36A)
ICEO
VCE=60V (TIP35B, TIP35C, TIP36B, TIP36C)

MAX
1.0

UNITS
mA

1.0

mA

0.7

mA

1.0

mA

ICES
IEBO

VCE=Rated VCEO
VEB=5.0V

BVCEO
BVCEO

IC=30mA (TIP35, TIP36)


IC=30mA (TIP35A, TIP36A)

BVCEO
BVCEO

IC=30mA (TIP35B, TIP36B)


IC=30mA (TIP35C, TIP36C)

VCE(SAT)
VCE(SAT)

IC=15A, IB=1.5A
IC=25A, IB=5.0A

1.8

4.0

VBE(ON)
VBE(ON)
hFE

VCE=4.0V, IC=15A
VCE=4.0V, IC=25A
VCE=4.0V, IC=1.5A

2.0

4.5

hFE
hfe

VCE=4.0V, IC=15A
VCE=10V, IC=1.0A, f=1.0kHz

10

fT

VCE=10V, IC=1.0A, f=1.0MHz

3.0

40

60

80

100

25
100

25
MHz

R2 (18-July 2013)

TIP35 TIP35A TIP35B TIP35C


TIP36 TIP36A TIP36B TIP36C

NPN
PNP

COMPLEMENTARY
SILICON POWER TRANSISTORS

TO-218 TRANSISTOR CASE - MECHANICAL OUTLINE

LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER

R2 (18-July 2013)
w w w. c e n t r a l s e m i . c o m

You might also like