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KVR16LS11/4: Memory Module Specifi Cations

This document describes the specifications of a 4GB DDR3L-1600 CL11 SDRAM memory module. The module uses eight 512M x 8-bit FBGA components and has a JEDEC standard latency of 11-11-11 at 1.35V or 1.5V. Key specifications include a CL of 11 cycles, row cycle time of 48.125ns minimum, refresh to active/refresh command time of 260ns minimum, and row active time of 35ns minimum. The module has a maximum operating power of 2.376W at 1.35V and features such as on-die termination, asynchronous reset, and an operating temperature range of 0-85°C.

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30 views2 pages

KVR16LS11/4: Memory Module Specifi Cations

This document describes the specifications of a 4GB DDR3L-1600 CL11 SDRAM memory module. The module uses eight 512M x 8-bit FBGA components and has a JEDEC standard latency of 11-11-11 at 1.35V or 1.5V. Key specifications include a CL of 11 cycles, row cycle time of 48.125ns minimum, refresh to active/refresh command time of 260ns minimum, and row active time of 35ns minimum. The module has a maximum operating power of 2.376W at 1.35V and features such as on-die termination, asynchronous reset, and an operating temperature range of 0-85°C.

Uploaded by

pnrgoud
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Memory Module Specifications

KVR16LS11/4
4GB 1Rx8 512M x 64-Bit PC3L-12800
CL11 204-Pin SODIMM
DESCRIPTION

SPECIFICATIONS

This document describes ValueRAM's 512M x 64-bit (4GB)

CL(IDD)

11 cycles

DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low

Row Cycle Time (tRCmin)

48.125ns (min.)

voltage, memory module, based on eight 512M x 8-bit FBGA

Refresh to Active/Refresh
Command Time (tRFCmin)

260ns (min.)

components. The SPD is programmed to JEDEC standard


latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This

Row Active Time (tRASmin)

35ns (min.)

204-pin SODIMM uses gold contact fingers. The electrical and

Maximum Operating Power

(1.35V) = 2.376 W*

mechanical specifications are as follows:

FEATURES

JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~


1.575V) Power Supply

VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

800MHz fCK for 1600Mb/sec/pin

8 independent internal bank

Programmable CAS Latency: 11, 10, 9, 8, 7, 6

Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

8-bit pre-fetch

Burst Length: 8 (Interleave without any limit, sequential with


starting address 000 only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]

Bi-directional Differential Data Strobe

Internal(self) calibration : Internal self calibration through ZQ


pin (RZQ : 240 ohm 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower than TCASE 85C,


3.9us at 85C < TCASE < 95C

Asynchronous Reset

PCB: Height 1.18 (30mm), double sided component

UL Rating

94 V - 0

Operating Temperature

0o C to 85o C

Storage Temperature

-55o C to +100o C

*Power will vary depending on the SDRAM.

Continued >>

Document No. VALUERAM1347-001.B00

11/25/13

Page 1

MODULE DIMENSIONS:

(units = millimeters)

Document No. VALUERAM1347-001.B00

Page 2

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