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Manual Ecg
Manual Ecg
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Manual Ecg
Manual Ecg
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Contents What's New!t HowTo Use The Guide ‘Alphabetical index Product Index Replacement Procedures. Transistors Br PolarTypes. Complementary Pairs Matched Complementary Pairs Darington Power Transistors Field Effect Transistors FET) Power MOSFET. Logie MOSFET. cat Surface Mount Application Selector Guide Silicon Power Selector Guide Silicon Small Signal Selector Guide Germanium B-Polat Selector Guide FF Selector Guide TVTuner Selector Guide Transistor Outlines, High Voltage Devices: HV Muttpiers HV RectiferibWvider HV Dividers’ Focus Assemblies HV Rectifiers (Silicon Industrial Microwave Oven HV Rectifiers (Selenium), Hy Rectifiers (Silicon) Diodes and Rectifiers General Purpose. Controlled Avalanche Diode PIN Diodes. Diode and fect Gutines Voltage Regulator for Electronic Tuner Varistors (Temperature Compensating Diodes) Varistors (Voltage Compensating Diodes) Varactors (Variable Capacitance Diodes) Matched Varistors [Set of Four) Varistors (Radio Tuning Diodes) Zener Diodes. Bridge Rectitiors Industral Rectifiers Fast Recovery. ‘Schottky Barrier industrial Rectifier Outines Silicon Controlled Rectifiers (SCR). Phase Control High Speed (Switching) Gate Turn-Of (TY Applications) TV Power Supply (Switen) Integrated thyristors Rectiers (ITA) (ora Deflection! SCR Outlines TRIAC - Logic level TRIAC - High Commutation TRIAC Outlines 139 SeggeS53seeee3 1-108 108 1408 1105 1-108 1-106 1906 1307 108 1.108 1-109 1110 1110 10 1H 0 am 11a 1.115 m7 ne 119 1121 1421 4125 1138 1126 1-126 1.126 1-129 1-130 4131 1132 1132 1132 ‘Special Purpose Devices Silicon Unijunction Transistors (Ut) Silicon Bilateral Switch (SBS) Silicon Controlled Switch (SCS) Bilateral Tigger Diodes (DIACs}. Bid tors (SVOAC) Overvoltage Transient Suppressors ‘Metal Oxide Varistors, Surge Clamping Diodes Resettable Fuses Surge Arrestors (Gas Filled) Quartz Crystals, Opto-Electronie Devices ‘Numeric LED Displays. Bar Graph LED Displays MuttiLamp LED Arrays Discrate LED Indicators LED Cartridge incieator Infrared Emitting Diodes Phototransistor Detectors Infrared Detector Diodes Opto-Coupled interrupter Moduies Optaisolators Ic Protectors ‘Thermal Cut-Offs (COs) Industrial Power Modules ‘Symbols, Terms and Definitions Linear Integrated Cirouits IC Selector Guide Voltage Regulator Se ICand Module Circuits IC and Module Outlines Miscellaneous integrated Circuits Digital Integrated Circuits, CMOS Selector Guide CMOS (Complementary Metal Oxide Semiconductor) TL (Diode Transistor Logie) HLL (High Level Logic : HTL (HighThreshold Logic| IL (Resistor Transistor Logic) TIL Selector Guide TTL (ransistor-Transisior Logic) Includes 740, HC, HCT, and 80:CMOS Serie) Interface, Display Driver ICs Microprocessor and Memory Circuits. Digital, Microprocessor and Memory IC Outlines Accessories (Insulators, Hardware, Heat Sinks, Sockets) Cross Reference Special Notes (Cross Reference Section} tor Guide 1134 1134 134 1138 1135 1.135 4-136 1-138 437 1443 146 1187 4-143 1-148 1-151 1182 1183 1186 1157 1158 1.159 1-160 1161 1-140 1142 1168 168 1 4.170 1170 aad 4182 1261 1259 1281 1281 1283 1295 1-298 1301 1302 1308 1-308 4330 1.335 1340 1383 a4 22What’s New ! Following is a summary of What's New in Master Guide ECG212U New Products — Power MOSFETs * 100 Volts to 900 Volts +10 Amps to 70 Amps TRIACs * General * High Commutation * Logic Level * Sensitive Gate Resettable Fuses * To 60 Volts 40 Amps Dual Schottky Barrier Rectifiers 60 Amps Diodes & Rectifiers * General Purpose Replacement Procedures B ic a nOnEn cy CROSS REFERENCE aIndustry's Largest Semiconductor and Relay Cross Reference on Diskettes SSS ECG now offers it's INSTANT CROSS" for Windows®, with both the Semiconductors and Relays, in one program. Two Cross References in one. Now approximately 306,000 industry part numbers crossed in one data base. Totally IBM® compatible. How to Use the ECG Master Replacement Guide Locating A Replacement Der 1, Consult the Cross Reference section. This section begins on page 2-1 and is arranged as follows: Parts Starting with a Number are Listed Before Those Starting with a Letter. A, Parts starting with a number are listed in order of the numbers occurring before a dash or letter. Examples: ‘900000FR2 25N68 42020-03173 4202003173 B. Parts with a dash ater a series of numbers are listed ‘ahead of parts with a letter after the same series of ‘numbers. Example: 48.155001 488155001 C. Parts starting with a leter are listed in alphabetical ‘order of the letters occurring before a dash or num: ber. Example: MPS-A10 MPSA20 D. Part numbers froquontiy misread aro: e 1. Zero for letter O and vice versa 2. One for letter | or Lor vice versa, 3, The Greek letter mu (y) may be found under either the letter M or U. Check both. 2. Verity the replacement. Your application may ditfer from the norm. It would be to your advantage to verity 1-4 the replacement part for your particular application. Refer to the Product Index starting on page 1-7. This will direct you to the page number in the Master Guide where the technical data will be found. You may then verity physical dimensions and electrical characteristics. 3. Ifa cross reference replacement is not found. In the ‘event that the cross reference section does net show a replacement, you should first consider the possibility (of ano suffix or different suffix replacement (ie, 2SC261E is not found in the cross reference section. However, 25C281 is found and ie replaced by £CG123A). The next step is to refer to the Product Index and locate the data page for ECG123A, then compare parameters and physical data, as shown, with your requirements, If this procedure does not yield a useable replacement, oF no similar types appear in the cross reference see tion, you may then use one of the following proce: dures for locating a replacement. ‘A. When published information is available, compare ‘of the device to be replaced with the listed parameters of comparable ECG devices, 8B. When published information is not available, follow the procedure for eelecting devices for unlisted types found on pages 1-34 to 1-35. 4. Dimensions for outline figures. All dimensions are ical In inches with millimeter equivalent in parenthe: veAlphabetical Index Description ni ‘Ato 0 Convene 1.259 ‘Rosessores and Hardware 138 AG Switch SCH 1166 ‘Adopter Tareod 13a ‘ahesive Sestant 13a ‘Anslog to Digital Convertors S280 Bar Graph Displays, : 1151 Bicinertonal rode yiioy = N38 Exlateral Tagger Dioder (DIAC). nnn BiPolor Tranestors, 18 Bi-Polar Transistor Seiscior Guide 438 Bridge, Hybrid “ORE Bridge Recters 8 Bridge, 2 Phase SANane? Clips Transistor Hold Down... 7 mer MOS Digital Incaprated Cress = Berd Golor Osclator Cryst oa Gommatoung Scie (See Phase Central. oa Gomplementary Transistors, ee} Crystals a 17 Dartington 61 ‘arrays aH ‘Aug Ample Hodules (See Linear 1 Saactor E470 Cow Powers : 83 Power Tansisiais (Amps and Over wma 181 pac’ cents : 1135 Digital Aisi Cio 260 Sigal erated Cee = 1383 MOS: ag om : 1385 ALL 286 i a 301 a : 302 iis 308 lode Wide ies Diodes ae 1108 ‘Conti Avalanche 3 mae General Purpose. 105 Inirored Detecting, a 158 Infrared Emiting, we? LEB. Coonan Ugh iting 183 Pi = 108 Surface Noun Devise Vio Seige eamping. it co Temperature Carpensating (7 : Voractorevarable Capacitance. “ne Variable Capactance ne 0 Yarstos, Temperature Compensating 1H Jaistors, Voltage Compensating . Voltage Compensating. 0 Zener ean Diode and Roce Guiines 7 08 Discroie CED. 188 Displays, ar Graph. a5 Level Mtr 82 Mattipie camp (U6) se Numer: 188 Display Orveriniograad Circe ceed Boubior Hybrid 68 Doubler Raetir Vise Doubler Sc Vee Dit Bigtatiaiograiad Gece 1288 Electronic Organ Integrated Circuits 1-260 Electronic Wugers “Transistor Selector Chart. 190, Voltage Regulator for Eleirani funer ‘09 EPROM (Erasable, Programmable, Read Oni Wemaryh. 1298 Erasable, Programmatie, Road ONY Memory IEPROM)...1-396 Fast Recovery Rectifiers 4417 Fer tae ‘JeET Ne Chisel 184 Moseet Power 188 Sercning| 18 Field ettectTaasistors FET) oo Fail Wave Rector a3 Fuses, Reset Tas Gate Tun OM SCR 135 General Perpore Diodes 108 General Purpose Rectiers 108 Sermantunt 189. ‘Diodes and ectifers 08 ‘Transistor, Selector Guid 1a Description Hardware and Accessories "Hoot Sinkayncnes Hest Sink Compound! : iNeliage Splice for Gf insulator Kis ‘SealanvAchesive, Non corrosive. Sockets. Heat sine. nn Heat Sink Gamacund = High Speed st High Vottage Divi High Vottage Mul High Voltage Rectiers High Vottage Rectifier Ouline - - ah voiae Si IS Oigital intagrated ics : Puck 2 Puck ‘clamp Assembly. . Rector sca ci Hold Dawa dips. ansliorg Hit Digtel mtograted Creu tld Bdge Hybrid Double Hybrid RE Ampiliors sate Ic Protectors 7 ican ae Infrared Detecting Giode Infrared Emiting Diode “ Insulator Kits = Integrated Circuit = Sita = Electronic Groa ett rscarc Unearse : Linear Selector Guide Memories aa Microprocessors Miscelianeous, Sockets. tuograted Tatra Interface Integrated Circus SFE Lamps i spam nasi EBBeseh tan ina ee eas ia Memories... Modutes (Se tinea i Module, Di Module; Thyisior MOS Handling Precaitions mosrer Mouniog ipa sir lukple Lamp Displays ‘Multipliers, Won ao Transistors ———— Phase Control SCRe. Photatransstor Dtestore Photo Interupter. SEE F * 133 A ‘ x $R28: SSsResEsEg wade gestges Be Baases ©Alphabetical Index (cont'd) Deserition ane Light Assembly. PIN Diodes. Power MOStEt. = Produ Ingex Sit etl z ethene A nm semen sine eee a ee ai : series tiie = glare : — : eg a neplaceneni iri — ena : — FB ca : ‘8CR AC Switch Seleeto: Guides ‘cMios: German incor 5 - Be Transistor zs Sticon Power Transistor Surface Mount Transistor : mt Tila aii age Regulator 7 Special Notes SCoxot Splice, High Valioge : Stitace Mount Dovcas ‘lodes oe Transiior, ica ran Sugg Arete Gael = (Bidirectional Diode Titi TeDlodes. erases ‘YEO (eoe Thermal CULO! ea ‘Three Phase Bridge aaaner 16 besetton ue ue He Le CS nt 8 8 oo —e vetoes Seine ie Be isa B ESS ais a Sean lt a ig isoesere i Fs is 2 PSST cca ae elle ue : oe Sat Sng eae ut ase Se vated i Sli i ies oa i ie Hi caer Sk et Hise Si Se ini oti a ste ea a Vienne Sh 1B vost uy Yasin 8 we sae Hi done ate Se S 2a SES fhProduct Index feo Pie. ce STE SE cout © TENE eA tame india om ETB | “a Tn von 2 MURR eR AES. | ie ae te my ve 2 EH on | 3 Fa tet aay ont —_— a areeroneoreric- crue ie | | — tat oe eee Wet vom OS ppececores sc US ee | SE tet He Sema btc eG Heeracie cei | Fg a eee INGE = 264 _O-Micromave Mixer Diode - Cant Type Y-Band « Disc. 32 138_Ti8_TPNP'S.AF Amp (Compl to ECG3Y) Rie [fa Suceava te | Se Ta slg no coop OTST Mar 1S His Geese eva ee sav ommrooe ee ae Ee 12 TE! UREA tenet crete ce, as a foci a 2 Ee, Pee ere we i fri vere tee vas BTS hs pe SSA EAT ET a as 118 S111 Vanator Metal Oxge, 38 V AMS a 1-40. T2041 TRIN: S:Boal Holm Lo Noise, Oitorentil Amp, Re UB EN Ea BYE co eimereas ta te eee vat tar SCS oR ee Be HS Es ine Bias tao ea SB hae etre nr V0 1-196 813-1 Varistor, Metal Oxide, 95 {Common Base) - : a ESE Bi Sop ate “ EERE RES earn ono no i ar wernt $ is ak og Ee Gu eee 3 Po ne RH 3 En iehenpcrstinierns, teu : ERA iat a ae See oe # £33 of ed ag a, Conte one sh EGA % =e wom 'SH8 Gain, Non Dasingon Amp Sw, Pass Reg Varstog Metal ie: 2 VRS 5___140_Ta_ENPN. Si Pr Aus Gutpet loamalo EC) orton Mota Oe, 50 RS 521-40 Tat-) PNP 548 Pwr Audio Ouout Compl to ECS] &% N40 THE’ ENP S:Pwr g, AP PO Gn Purp Comat. cup 140 tag FRPN seated Pir e 40 125 TNR S:Por mp, AF PO, Gan Puro (Comp! t2 Econ “ oar HS 2H BERS ARS as SEV ota tas ERS RERL opto cr r3cn Tr135 S11-2 Varistor, Metal Oxide, 420 V ANS ee EE aera, He geveneden ses SURE aaa Fig Scone RTT meus montomwer | ig sas ua Si eaeeeee eA ty vorigiaiemrncigemess———| § 1 i Rese Eason ese tog et Bese tind a So i Mugunmnemoren seas gb: ae ae as TeV Sia Uy ae SO "S20°T Varistor, Metal Oxide, 420 V RMS. ee eee ee St Ree a 2 28 Seisemee ee THe | TNEN. SIUMFIH Amp, 8 Gk me ‘2_ENPN, S:Gen Fore Amp Sr” Die THe TPNP Situ Gain Hi Curent 74602 _1.908_D6_IC-CMOS Quad 2:nput NOR Gate i: eee are eS EAI ue {E03 TPN, SUH Arp. hiner Osc UMF Osc- Dis Heid 1306 Bs IE-CMOS Trine Sinput NAND Gate ve potter i HBS ERE. suo an BER oCtminseonn | tee fe ERR Rede peesgart es i BEARER. BREE RCAeereRse” |e ERR ee econ nape 20 139. 1203 TNPN, SiAF PO, Seis bas Compl te £6621) 74690, Bi IG-EMOS 481 Ooctae Count age Caen a in 1S CA Re Sig eee oN ots hh Tone Sine €oa2saT 17, feo Product Index (cont'd) FoR FB: omserioton ae ine rece ane oe =. ~*~ ‘7aNC132 1.316 D6 Cea Ta Senet COS Soret AND "A632 a0 8 |C-MOS Secon AN Ubown Dede Soe Ee mcrae 126 0s ES onascuos tata new 120 oF C8 savonon 8 Yio Du coma oman 4 28s naermte mane alba = ach Ta DIE GMOS Osa Bote Diverwin ming —— | sheI81 1217 oe Delt Sete GOS Binpt Mutipner SSueonene Tales 137 Bs lepgia a stecgeuos Bunt te vacate 1221 12 GENESEE butenine Orv Novnvring | fehetse 1347 Bio cogs ha soot cos etneweteLme ete uot Seeterbesict aca 1323 or EGNOSSEE tana ach inane | “TaRETeT Tava Oa oe SOE BT Bay CO TSE De SOE Soa 0 Ts Tap an TB rwcier rare 00 SE QRIN te oaos «ene TEE BF E08 torlorty lobe Tatas bur ‘enna Re seat 13S GF EMS NetNames tienes” | reciee sax oe Rfeandewos eo shit Rep Sa 13 0 Sos terimerng pos cwossT inwtas | RETEST Butter - Dis. a = “Be —Ecnas her vontwertng NOS CHOETT —| wics 1319 o8 leDals SpeuicHOS Quad 3. egw coe eae SOGHE ASE 8S ESET Setenss teaser a, >ecsa tam oo EEMDS Rows Ete nin Sie 5 ‘74823 1.32812 _IC-CMOS 20-Key Keyboard Encoder with 3-State —we Sau wien 220 o TEE “Bs ECO EGG win aise Sepme | NERA TY BEE See baar bee soe Be aco rape 96 PER Sead Sas zou nano o teh 1358 BS erat fesfoed att SMMC RANB Stn oe | —paeaes—ra Ginter See kin 1 Be Tas TBs ped Rca Jihes 1ae8 be GreissbendMerinerarwn pn otaner | rshcx00 1222 012 Silat spendcnos #1 ecto Set sere sm onmln GREE Batetecmtegins et ts ua rae 190 po Me np AND Cat TEGGT THD edie Set eMOS Gont3 Sue 9 th Taito __¥306_D5_IG-TTL Wi Speed triple Sinput NAND Gate TaE374 1323 B12 NEDigta Hi Speed CMOS Oct State Flip. Fop Ae eR enismecmcceteme q, | Te” Me Se ; ath 1358 86 Errcteabocr nein Mis one reicno 1304 oo whiz 13 SE rrciabtes ua stbur AANO She win Open | —faneaet—Taee- Be Sousa SB yeas ial Ble Jet 130 oe KeruwamesDalshontanoauie | tiaate 138 be Hit 138 GE Ertl Seed Moon terest ‘ast Be w]e Ta OF Cn SpmTIOS Tr Be iss —TaHt-8s ETN Spot gmat ZED TATOO | revceoss raze os BeLiRlSpeedca0s Amon Senda eeinenecioe rot 1312 06 ETL WSpeed2223 out NOOR nee cwe | r4iceeo 1208 08 MeDipspmed ONDE 1p Roa cay TSE TSG SE ERNCSSSAS ee er See San nati! and Oath soi 1313 96th loon Mon ste axe Taney Tee fein peed ME Tech Yeier — Tait be TW spot 329 nur NOON pre Tisabinasecocncr WET URE BE EMU GaIRia RGA BER coe | rmcivsto oe agai nt SHS corse ero roc 1a oF CFL wsoee cus pop winano cow | recoe sm 06 EB specs Ont inp NAND Gon THE Ta FERN RRTRGTIE WE RpRerm Saas | TESTO tau 66 Eadiclh Sng CMOS Sd aND cow rans tam 06 ET SSt bao eed ranwnsrie. | fatee, 120 be leolmlt Sond chos Gung Ow eins 199 08 Fr Hi spees Duals MS Pip op wit Sapo Seerdeedantaaisn Tae TS BE ETT Spd Dan Fp op ah Spaie Soptenoa Rone Tae TS OE Renal seoon Car ga Bs rarer 1310 00 bgt fetes Eos 42a Cumer 3m IRL EE Enis eacimentivome | racr ris oe ESecTH ptcuas 0 i enw Tat —= os ET Wagan iw Tnorea Tig — | TRETRY T3AT BH Baa oud HEE Oe Ge iro rence 1215 6 EEA AO Oa. iggwearin, | FONETSA i BIE lecipaiy Soens MOE Sel bite Fs op Foon ato bre cater ranoa 1218 06 REM Eel Ciegnivetigetggewsri- | _veicraa 1222 o12 Big Smet M0s Ol 9S Ltn Te TSS Rghopetringaa haste Cees ce, | Forte tah Bir aust Osu or hn-Oe Flip Hop win Sepsree Poses, ané sommen Cuar | _ 78.800 B6_IG-TTL Lo Pwr Schotty Oued 2nput NANO Gate tnd Bae Taso} 080s FETE Pr Sry an ns NAN Ge aga Fa BS ET Spe Dan Cy Fai ‘Gin Opn Cae Clout Jiles {Se Ge dlp wpnce 38 Gundy n'Snw | 7aso2 3300 6 tn eter Sehr Sune not NOR Gate rites: 138 Se eBgins seat cos GuasziNpc non ewe” | 7atS0s T3w 85 fEricto hr senntydund input NaN Sw ‘atest 1S 83 geal he Smo es cre Wa Opn Coss Sg “RICO 1am" Oe tl See oS Wg sur gaqoane | SO Toon SF ICTTLa hy Stn or ew pe ‘iets 140s Be EBS soot eos ha svn apr ruses 1298 95 IETHCARNP Sy ound npn AND Gate fas 1395 Be Etat SeeugGHGS Geass gHyy | Galen 1358 SE ferrets pen schon Se 2p AN Bonn siiess _13u_B¢_Eo3tin soem euge inde Goww YAS Soi Tuitas 1315-06 fel Sone GHOS Do 7% tage Papwed— | TLS —T9ROF TCT to Fr Soy Tipe Tap NANO. Ge teks TEEN) be (ETE om Stony Hoe shp bo TAHC123 1-316 09 IC-Digital Hi Speed CMOS Dual Retriggerable MMUStZ. 1308 OF IETTL Le Pr Schon Triple 2.Input NAND Gate ravers vax 06 Est Spd SHES cusssuterwin ase | TNE TRY egg or Stl Olt 18Product Index (cont'd) ne " fi TaSioh Ta18 be Eta her Shy KSA og wl i ection aasies 138 08 vr hry 8 Pua neil Ou TRSvSV3698F JETT Lar Scot We np ATO Gi wih Safes Se Tanai ase 1318 of ETS Por Shoty Ser! or Purana Ox yausm 1909 08 ETI kaw schiy Dual ¢nput AND Gate Shit Register HER 198 86 encisee sity inci laaase” || —asrear rare oe at pr Sy Rees Sco SHEE 1S BETES Rr Stee Ba tt hue Beant Spun at ue rasieon vate on WENTTS per ancat aerate Synevoreu TASS TT- BEET afr Senay Ge BAAT Ima — | yn Gobo an Cran ruse, 1319 06 Rofo seomy Mou ainpunon cus | —TaSttg 13 BFE TIL or stony Os Sats RST HSS 139 8 Enttonnsiomy aaszingaNenas, | TaEva 1318 68 Em tenwsavcn en's het cece one 38 _ 1318 86_(ETE AS pe Sema eet OD Ge SESS UG Bh EnbiceerSemyat, Ne npacomm cae 7a — 110 Be TE FC a Po ety Go ut OF SSI SH BF, Ernteee among a ee ce eerie MS 120 GS nttone Sent Gand int SO Ste wan union com Spun cleo Ouce Bi SiR FSS DET br Saat Sep Una 7 1210 D6 ETN te Ber Senomy Gund 2nout NAND Butters oun ont Mode Conwst:Ba JAS% 1M BE ERISA ERY SME SSEANANB Re | sesior sam oe EFAs eer sean Usose sma Coumer twin Open Callator Opus RaStsa 1280 BS IeTILLa har Schou Synchronous Uptown FAS TH Oe cis sey eee RE intr bon Gal eh So TaEe 130 Ge settle noe Sunes loom Bacew tt | —TaRTaT—TaR- pF ET sp Sno Users Binoy Cam Simscoe seen Sadia 1 Be Eritapor Sony eBeoareons Omen sas ta on Bongeeeeremerswetomet | sess ue oo ES enemy sas aa ie Ta er Shay Dw ar SOS LER BEETLES Re Shetty SSRN comer Sacre: aH —1a0-Be ETL Lo Pr ony Panta CB Bay mse FRE sry BCD Ser Seamer ue ruissr_1a11_0¢ _RTRLCER scotty On aon nen Gt Sng carga treme Set TSO ETE SPST MOSER TER GR | _raszio sano ore TICs Sec Say BE see over Seta sage ta BF mass 152 0 EMSS we saomyzwesmpeannioninen | Fee EE BF Son jase 1351 ob rasr_ 1319 06 _ STi topw Sehomy Ol) Fe hep sage TE Bh Sitsrs, 1313 Be GTI Lo pw Schomy 4 able cae ‘ianscoivers 3 Sate Output Stee 138 GE ETE Rest ould reset mone | “TaanaTTaH Bae Sty SCO asm saa oc WERE eonomeraa om | rasne van ve BFR sro covosnen seamen asm SE OO ET Por Sagi Gal FE FISHES Sosa patty rasnar 1221 on EFC saoty aco%0 Sean sion meee wane SRG toe atte eres Sigs ML SS Encigae sey Gouin a a Grin new iesore Sass) taht oe ETI Ls br Sey Dae Com reson saat oe Hts Re Sy bout 30 Yalsse 1314 BS ETL Lo Par Schorwy Divide by 2 Count 7482601321 DB IC-TIL Uo Pwr Sehomty Gund Dan facssy 1314 Se SGTILLD porsche by Ecncitajioe ia! 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Ta Wana, FRE Gan a Bn CaO $58 Tai Thue sentpec se opts eee Ecaaicel 88 1123 TNPW.Si Hi Speed Swamp 5 a0 TREN. un yO. Coma zt 158_Te1a_TNPN. SL Hi Ftea ideo Amp (Como £662575) Sf TEE TENE Gen rn Bow Aro leo ig Egat) ESE TEET TPMRSL HFrea io A Compl 0 EeGze7) Sh_1383 FHS, Gon Pts Mi mp (oma Eea2e) 158 Tei Ten. 8. Au ouput rer iComal fo €€G2S7N SE TRE TOME Gr Fr Amp Corio Oat — 138 THT Thue st Ache ouput er Comlis ecsz570 1St 1294 TPwe si Oiptal (04m Sw, Dror (Compl to ECG) Sie Ta" tnow Si metirspeed Sor HSL HO Thou S: Bit ann Su, Berean Eeeaet) THE Ta83 THON SRW Spe Br 15 teed tows: Ogel ctl Su One Compl oSeGae, ia cer enece VSL Taoe TPnn dupa ual Se: Br emp soeecatay SSE Now Sit hg 1B Hes TNDW 3.081" on Sw impo cea 158 623 THON St Ame Speed So ESE Taos town’s. Oat Dr Sw leon ecszaze) 20 TNPN. Si Gon Pup Amp. 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Sach” 1260 Bie ICcMos Oued Binaral Swatch 1354_Bs_ICoMos bewoe CountDvider “i aat” 3 —ICCMOS Presaible Buide BW Counior Vet Bs IeeMOS Guad ANBIOR Stet Ge H3st be ehtos Sane ays Comer \2a4_08) al Paral Shit Register ‘F284 027 CMOS BStage Soral to Paale SH Regier 1360 Be! leeMOs Gouna Bio ICEMOS tnt nut NAND Go i" _IGeMOS PStoge Snay Counter 1. —ICEMOE Tse rout NOR Gat Bez IEEMOS fae srout NOM Gate 88° IE eM08 Bree GrmerOvisrecoer tor Ds! 1GcMOS Bebo Dremel Bcoder Ba 1ECMOS BcD‘o.Grcmal Bsoast De! 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BcbBiary Coome RETR FeO ta Seger ‘Sire THE BE ICME 88s Bur Compal Smee win sma 1202 on EOS 88 un Compute te ate wih THE SIRT Sure Camping, OerTagy Taran 7 sn 141 BEige Samping, Ovenotage Yani oe estes ng. Ovewotage Font TREE SHEE Baas Cig rena ToC 138 s162 Beige Clmping, Ovevotage Tansint Scene a Br Se ae a eam sea STE oer foe tad sue BEE omcomart e — as rawr Se ep RT TT Sh a ‘Suppressor 300 wee we eon ot EE crea prerins ieee Tat Ta ee ae oer en oe et te SRO er eran ——— a fos ou aero oC 4907 1-139 St4_Dibisrectenal Surge Clamping, Overvolage “id DSrge Coming: Overcge onsen corn ste BERRA, cpr ete So soe vo ste BR see cana ote coon a SEER oa en soto sue BRON Sten a Scie ar ET some say sta BE cute Sten anon 3 fon Sn SPO arr alot eee ecco ao 1.24 7 a won 978 ssn 60 su TT ss a su su ‘Sirscignal Suro Camping. Ovevolgn Transl Supresty. 60 Uae Hes D'Surge lomging,Overvotage Trersiant B-Berecioa Suge Camping, Ovevor “rant Suppearen 18 URC Bue Suge Compig Ovevogs Tavsion Qxavotoo imeeeeameet Suppressor a0 VR Sei cepts er BSkgr comping Serlge Posen Seiea ioe rence Sag rg, Sarat SEE Sot camo, vena ice ech rns Foci toonaaae ee Suppressor ehvR ree Sica coer SE care genome Tension Sunprenoor STS YRC AMS ‘ansion Suppressor 10 VAC AMS BRR crore awit Stopes 420A AMS Suposson 701 vR Siig dnt Soa an Saari Seve amo Senor 1m S14 BBBincona Surge Camping, Orne ‘amr sie DSurge Coping: Orrvotepe Masta THES Diincions Suge Camping OvwoTnoe 198 ¥139 “a Gs su BiBeiecionn Surge Camping, Overvotaos SBeacions! Sure Camgng, Qrrotaoe ‘rast Suppress 785 We iS, big clamging: Srorotgy Tn ‘Tronsient Suppressor, 905 VAC ANS 2 Seen Garin revotane anes eres seta od see Scere oxanotoe B.Sviop clamping. Grarvotiago Tonslent Suppressor teh ‘asin Sapyestor S008 AE RS Surge Ciaming, Gvervotage Tansion. BBBrecnond Surge Ci var ‘anal Supprnasor, 190.8 VAC RMS ng, ern an Transient Suppressor. 1813 YAC RMS* feo hae Product Index (cont'd) for MEI oes foe faa THE AE onsen Baa va x9 goavewapey iow. sean Catee Semeceans sae tat siuac = 210 BUSTS WIS news cate Comedie o 4989, 16139 S14 Bidirectional Surge Clamping. Overvoliage Sa-e. vc Sone are as STAC com von sie SSipeloalg Sootgs fot Ko “GT TAT SSOBirotonal Surge Camping, OvevoTage Gonmeced ostud 9 = eee ae stone = 2 ER cee ct om sn sie SSipe Sate Satan be Settuoe tao aA vam su SESE re carges, vmotane = ‘a Sol aS Ra BSbac von ze zoazayzmoy. ows Teme caee “ai TFs Drge Gogg Orrtgs Tan nec Serene ion aioe Somes Se soe” Sequin zm 29 qu a0 v0W.08 Trance ane vse re SRigtesetlne rarcape Hsien =ank ay Ti 3 en Se SE ONT Sea 111 m0 zoagmzm0y. sow. Towa cata com vs oe SUlgratg evap nen see 110 ze SSUES 184 Sees th Sos Hn ape ec om pny tet some vin su BEERS cunng enotoge She ia He Ascardbe gormy ies Sa So et Rae sm fois Ei nevanah women aaa So ONG Bh eee pao = Hg 103 BS aS oiaee Beards sk vu Bt Bienvetusmere ate 4. [Sr He ie oe mae eae En Sy ENp Bt AScaigee momen = i Bf ag aiaee Soemes Bea 1101 24 2024 wu 08.00 lems tl SHEL ASLBIRS oom 8A Soo TIE Bt RS: Bape BRIA Blow ron ao psu sev enw oman ms 8 s Bun! in 2 Baesgyseem TS HA Ast arabe gem eA SM IN Bs BEYER ES one EM ESE RESIS m2, Sit —in-feapseasW pe meses aa pec Bun iit Ba Basvesvse meses ame ne pee Bak Gn Bt RSV Rome ans Slaw 29 snes v7 90 m4 ramen Pa Saya sos as oe Biba 1a za goss sov.a50.% romance ora) Shabu tin Eh Betwmeyegw gs rane 2 ee Sar r-a abv a9 Te mons ih os Hie tn a BNVOR oe Wee ane 1S HERS SRA Lin Bk Buvesvise team ang BH BD Mes SHSM TaN Zao 2542300 mw. 9h Wlronce PEO) Ma HBS bra Shv Un? Buyaneer Bet bre sob ‘wa 4-113 255 Si, Bridge, 600 PRY, 100 A Bia vin me miawvamey ony on came ar) ie Bt Settee ores, Bah, UN mh Buwsaea eras waa ome ‘ide ip Seuivaeec.cosvomtnss® sre Cita 20301 30 9 Tolan ag) ——— Tie Be SAN Sck eteanmnea Se cin Eh BE moses TB BS SANS a EA He Bb Satter poms = Se ee eR oe Tie htt arnt Toe Be Scala geeee Som oat SB BS Een oae ames Fix “va ae ‘aie amity nbn nanan rl I BS SERS pei evr 4 om S107T2__1-111_Z3_20-123V, 0.5 W, 2% Tolerance. é a See Soi Haar Sereno om owas Blan 1401 2 spas muzeoy.sw.sn tomer on a et Fe Bienen nme Hee ia >is _mesvomaeseos ———| Sat Ba vom 2e zeasea meow sows idaaen Hy BS senasvmites an oe Eat ge seeamymeaes Bhi, van ae. zeae ue sd Yoni monroe BBL BE setagmesg Soh Eb BAW Be 3 UR GE SAB inte Boa _uan_ 2 spasm amay,.0W.54 ean sie i Zit sohami 104 ean 28 fast x ong tow 8 Toran 5a24 1-126 261 SCR-TV Pwr Supply Regulator, Hi Speed Sw foa0r ow toner Can SEE BL SARC mimi dea eS a, sux = 20 BUSES rae cote =e See - * oe Se bh BS Senden 708 SU BP engi ee 1-25Product Index (cont'd) net $2 TERE ont og [ht ii, snow tay sai ‘een Pee 2 OB Seeese Soin iS EMimiass eis eeerm on ie, dnamame se Saye eam es a Sone etme 2 e Reins SUN) EREARGS owe Soe Ea aan ao Sg ee saiame os 2 ee eoiee eS ESR? ELE BIR Se ie enema a Se ie eatin es SOLE Ese Son SAMs Si Me ie Sasa ee Bun is kvm me Site i ASME oe BeMEs 2 —Te mere et BE Bower Sa Uh Eh, ERE ms zat Sen va, 40 A SB om eee Sn ES MNES “ge te amin a Bowe Eaves & BEETS 2 Le Beis ee aoa Son eanmts SNE EL EAN 28 esac Soe gees: BNE EESRaihes Sh nS EN de 2 2s sae Pate SRB See eee eee = 22 seme SE Sees SURE ERSMRRS 1-26 eo SE omen ea ms 2 2 Bere @ Ue Bee. oO Beas, 2 2S eames BE Bee, is eee, = 2s ee @ igs mesmit Be FRESE awa URE RES asses sea ea tacoma So at 2 a He Ee Bt Reape ih Sparen = esi #8 Es rh THIAG#00 Vi 18.4 Tunes 32 TRESS A sameats Etim: TRIAC-400 VAM, 2.5 & EA Tear TRIAC-600 VAM, 0.8 & Resear HB i RSE EB ito mocaevar a TRACOM vant 75.4 “TRAE a0 VANE 40 8 a 30 131_248 _THAG200 VAM a0 A 130 2410 Tmiaceo vai 25 8 Bee i ee wus Be Hi Ge” Eeettiec tet amas oe EEE See testes ge eee rte Bae 22nd Ree Bi Passer meets 1B A Paton Testor van it Bs Es re es RY ms aa Zea Fn Siae ns SOUSA Fa ba a hb ad ste big Vist Spare tanec Foo Pav. $A: Asal sad RegraiA Ra RABIN TABProduct Index (cont'd) 200 PAV, 128 200m, Cath Case £20012 & 200m Anode Case one 2 ws 38 oe ue B 283 H 33 sabe ac. asi eee a [S3e5 Bs dees SBHCEEELCEE 233\33333| S333] fe 23 331 38! a a 400 PV 6A Cat Case RA00 RY 8A Anode Ce Room ga Can exc 0 PR 6 Anode Cave 900 PA 99k, umn Cone 200 P28 Anode Case ) F800 PRY BA Cath Case tere seece, pace Lica erm HT ey eee See fa tae heat ig ie tania uae Bee GR utees UG fb Eevee =e oe Shae OUR Dea ice st ie fata stor Soe S18 219 RQDOPRV/TOA, Cath Care. BU ER ERR: Sos 115 218 Rego PAV, Bn PR “Sr ae Sper econ PS ee Bt 111 218 RAD0O PAV. TBA Anode Case BLED RIA hesese Sy fa tommk es Sead 1115 218 Rabo PAV 20. Cath Cone Sh Bh RRR ER aoa nana on OLN a temakcece go i fa games me On lay ata saz 1-115 ‘R-1000 PRV, 20 A: Cath Case Ps i eset ‘eet RSD PRN IFA ode Cae Ea RisonSex tome 3 ie Aaa 83 $2 Pn 18 aoe ase er TSOOPRY TSA Cath Ce 33 BIR PAY ISA ance are Sa F409 Ph 28 Eah Can Pras Fa 3a 13 Pm 38 Annas Fe Sa Moa 28 eu Canfas er Troon 3 Anas Ca Pes FT Se Born ion con Sa Sor s0A Anos = Lee as 5008 1-200 PRY 0-8 Cath Cave = epee Se 209m a A anne Co 0 F209 Pm a9 eu Cae = caiman S989 F800 PRY 40.4, Anode Cave Set 10pm 4 Aah Cun Se F029 Ade Coe Sie 220 Roo Pa A ca ce $e |41e Zo RawencaoA aroue te ee gee ee ee Seet__{ste_Ho_ fuse pao 4 Gob se Sots 1220 eso PV 104 Ane Cc fie tir 0 Ramen sa te: Sah eft acer, Sr HI Bo Rony a Sonne: Ate See Fatty foe tt Bo aw en aoa am, uh ae Fat taney Sies_Tiit_ R400 Pa Ao a Anode Cie an Rae G01 1-117 220, F600 PV. 80 A200 ns, Anode Caso, Fost Recovery i242 Zao Ramen a2 a bowed Se 11s fo" Rese wa tne =acns fa GN) Be fe tir a0 sia 3 Sst /4ie Zo Paw eny eo A heaven Sa His Bo Ramen eA con owe Saas ee ar SoS Ry BA ie cen router Se }MNe Zs Ads Ww cuca eae Sans 2 Rasen 0A coos te Sst TSHE 20 Eton pm 70 nade Ca fee He Be Rapsmmy WA cam ene fees Te Ht Ron Omi TOA anna feet 0 Room oA con a sl" PaO PRY TO Anode case eer He He Roose WA Gane oS eters es__1.N6_ 2A P39. Kos ne on ite Bo fe ie Be we ie a Soe oe) LN 201K Wsehoy Barer OV 10 feet ne AA RScomy Bovey 818A eer THe Bua fst Baar eo 184 eet LHS ANA Rasioy euat SY 19 fete fia" RSchokySurar tac 4s P,25 Aca came ‘is ——FI16 2518” eho Bri 10V PRT Cone fos ie ae con 1318-28 Fe Srey Bri 45 PV. 20 common en 1.118 2410. Boa Seoty Brier VP, 30, commen 1.27Product Index (cont'd) No T_RS:_peserption ‘iso 1-118 2816 R.Ova Schowhy Bor, 45 PRN30 A, Common G91 1.118 270A Run Schoty Bat, 4 V PRY, 0A, . Extnode a ‘isa 1118-2704 ROL Showy Bary, 6 V PRY 40, Common Esthose 3 6683 —T5TE ia Duel Sci Bae GO PN IA, Common Esthose G98 220. Risch Barr Rac, 5 PAV, 60, Cath Case ioe 118 Zan Reso ss0A cat Cace ioa_1:116_251_Rsoo Pv S50 Anoge Cau zm 7200 PRY S5DA, Cth Care B RaHe see BSR ati HB BBR ieee SB Ren ae et er we ot Sere on ve ERB ui 3 ERIN Ha aterm er HB Eames ‘iz 1-116 239 — R-1600 PRY. 1200 8 2 ee hemes HEB Eee eB aks on $2 ERB E tt ts —Ha- ge Roarar reteset % ye eeaea! i Hye tee eet He 2 ES ae eee Oe 2 ERR eh eee: 52 Bem BAe ‘se 1-28 td ry ine 1138 Bain wai in 2. 2 = 2 a & a # PRIS a A crn ce HRV ts fe Se cement PESe eA ernment ieee ete ee es eee (Sg RV trata ome eames ieeiaesie ds Peewee Rees (Shaan ha oe im ateete igen A eater tere ar Eom eter, 400 PRY 289 A. i, Aad Cose- i Uniuneven: 8 aT Oeode-2 A, 90 ra, 28 V BRIE Die. Tigger Diodes A150 0, 32 (ERIE Tiger Diode} A. 250 m0 V (BRE DBeSoraral Tigger Dio? 20 mi 69V (BRIE Berton Bode Tyrst-SYOAG, #40 VEO, Beacon Dade Tyitor VDAC, 545 VB, seo a ee ca Tae be ESS ne RINT TON) a ten sim tt Bono omte erste 0 cs ase Blaetom! te Myr sHe, m8, I Tae Ea reo TS SSW Emenee nnn ae jutro SERA tse became ne ee, ee cet serrtceree tet Eas 68 eh yb a i ye oy lear temo cre [sel be) ieee nereeeeas ee ee aera eerie jee i aaa eo tat be, BREE ome cena Max Access Time = nis 2 si ee ce ae ot kre seceenn Seat ae Bb comer onmmae 5 res eas ere SSE cer ereerecess eee cere com san oe ERnennn sare aay a te ES eS ey — co san oe Beene taoeanceteeane Bosinrtace river vith 2a anne Enable 7000_1266_Lr11_ICAFHO.SW. with Mung. Voces Rea Foe2 248 Land IC Swich Mods Pw Spy Cotter BS ie ect eee ow F008 _1248_L1it_1€-bus! Stop Motor Orv 1d» 300 ma SS ER areca aromene tn 130 ne ita reamorDaos Jon Yaar Us tearho, avi vec tow hina i HG Bb Emveemommmmrster Ei UE ib Eitri eaters ran fre ta Hae ruven Be tag Hah Eee Sit am a cmsnin Ei GE Gt ERigimitoe 3 eee ees = GE Seen S fe Ree RS 1S He waco ny 031 Mod-AF PO, 100 W-RL= 8 i Vec~ a51'V BS ie GEER Vata 034 KB7E_Mod:VCR Postive BG. VE Sa Tas ta eer Reg Ro SS ee 3 pages oer i joa {do" IE-Bidrectionsi Motor Diver SBE Bee... 708s, {aia IG Horizontal Processor iow 24 IEAV Smal Signal Sub-System Bo HB AEE eceel ces BoB beeen es Ss Ese We nisProduct Index (cont'd) = me HER aot a ia te CoE Te ee ree Se ee RU wee Se eee RR ir FER rr tbe cpm ee Tes ene tren Sete Rome So He vere meee See eee ate noe iE EP Ee ee a oe La RS aN eo eB eee earners oe FOr _1262_L89A 16 Bivctonsl Motor Oren. 10s 2A. ae ae eae Be 12s Sak Gncreemesete iS Be een 3 SS es Se a3 1s OS ener SSS oa se oe eer ms ae tor ee ear Gb ue cieetee tet ge rl Se te Cee eT SS Meera 7001 1254 UA2_1CDunt Bicrechona Mar Bri oe Bee =e eee Se ie ceeleepee = BS OR i Reena =e cera S Se cooker eee te eee ieee i 1B ER Ria eset etc ane l= 8 0 - Dise a 2S ge eee = fp Samoa ras tas un Botta cen nam anise versity ee Pe fa tee a eee eee 7 re eee ee 7131256 L751 Dual BTL AF FO, VaW, Vees 122, RL= 40 ae Ee EER eS ath ie 13 HA aaa 12g 1s pesca meee ee eA tee Fa net a ca TT ra vas iran Smear eas one 3 ey SSS = BS 3S He Beeibeee he sheers: Po BS Beier toe com Suto Bie a= ide _— aes SS ENS, cence erat tet ea Te tears ee a a eircom rsa on ETHER os pn concer rot ta ERSTE oom 7s 1S Serco eae mo a TORT Se Bi eeecuns HTB SS ETERS SREIANSSS, wn ope conan a 2S Jat6 1308 DS IC-TTL Hex Inver BuftrDrver with Open Collector Rance ae pot Nan ES diet ‘ei eee @ Sf Exeoeue 2 oe oes ae 3S 2b Eee ersereree 3a St ET eae eT Saar 310 Bs IE-TTL fp Singur NR po eto ae ae eo iB og 6 Eee ess 1S -Bb a st nr a TO 7437 1-310 6 _IE“TTL Quad 24nput NANO Butfor oa Fa RD St GSS ert ee roa Indicator Tubes a Fal Ene OC TAT RSTS id ae anenae are eee WS lS ER iSsttoaencee on 2S become ey a 26 Soe Bat eon ee a LR Emenee oom tat tig oe ik eee gm zergneonerom 2 of oe ee Was VSR DS IGT Dual dAk MUS Pipl wih Cle Ht ERB ERUSRI SMe etipaeonciw 7482, 3313 06 KCTTL2-it Binary Full Adder - ise ee tetera 7491 1314 DG IC-TTL@-Bit Shift Rogistor 7 SS, US Be tomes peptone 2 (RS STLSReaR so IRE SERS toeteern maria 3063, Set Tawra cree fore ta? Cr ees 13S Ele RBS cc 2mie te cea nen Re aa 2. eee fees Seletorhtatipiner its Sate Outs 1-291 sco Page Fa Product Index (cont'd) FEOF: aetiton ee) 1290 8 ict Ou Monomer ae Poon kore re : it it tome STE RE omeipton SS HE SS EME Sen teen wm Mee eon ___— oe Be ue F a or nue 3s & hehe 33 & = ose BSRtneStiowiouuronwinssue — | SBE 8 iEhuteerahetoge hae hep Bac San 53 BS EMU 8eSwrtncdeSecsrkamp Bisa Span rd oui TB bb ESR echo auiesiouinenimanin | sam om oF HR Bn nt Octo On On amr 018 Sip teu Sanseraisinae vin | aE —TIOO- EM Rina TER OORT RS T3aba TE San ek Ges i ams 1400 08 MEL BED Socen Segment coder Diver O = ‘Themal Cutoff, 228 °C - Disc. 7 inet 7 Collector — See va G mneu ae 001300 06 EAT Eu nyt AND with apodeme 13S Sly 2SScen Sys Sonor ang av svar Sia ie HB By” (Esgunansaceuna dn tT BE oa Sp i BD 7 OF SiaSooieaigieat at Never Oapoe _| Sa 13 Oy Rite Dadnraonnn ena "bee Sig ad te Sol 13 US naretine SekeiGuplecrain meses Supus-on | sueh 1360 LI fee Sel Onode for oR Di OR Scrat aa Oh Cae icra wt alot Componente Ovo ne Bae no ie oo ROEM Sasi = 5 — Sit a Revogooreat none ts —T38-O10 CDS Pagans PipioanaTa Someone Tie 138 be) gu GueTUmeetine Sor iatner-poe | 02 1220 09 tS Da Rtignablemaneraie Monoble So 132 BS Ba See sue iie set pease Socata fre 32 is emia pute inn dae on _ Mga Sa rn ine Rene $5 son BF EDEMA ES Pin Se Tew Ean tinpt NAN Ga Ps RO oe a Oe cents 8 Elm Petc heau ge yy be By ESE Seebeccguagecom & Eur Auacancpansoa te Be 133 8 Bia sear ease 2 EO RN SRAASA olt 3281328 06_ ICO Bua 8 Shi git, BE Est baal Pulve Sener Tear "=e Te Opa So Sogn nena Tr 8 eum ova mpi oe Gcretincaeas 2D" ue Se Esc wat mtr Spar Stator tam 1220 of Bl SeSegnen Scodertsvartnch wih 85. nt Sasi naco as Sete enroeetne tee oe ‘Tig Fap-Oie eam 00 Spader oan tr 8 | Pratl Ba nmr a — Ta oe igo aa Ba Se Sn oud sinha Nato eng kona) “Bae ES 1 GBR Sees Rgaerae Sa ope Biot Sua simea nan Gos konm nae “bas Si TSE GE EBS Suc soem a aac 35 TET ur Ag a ab Tn, Sloman ESB Satie a koa Ra oe xs aan_ow_ EESTI ine wn 2S Oot -De Be seBr dS tea as te eect - Bs Sat — 13H TED Symone ary oom & Bu at Gn oer Bs st T3a8 bs ebm! Payne Say umarn Se & Bu OW coon” De 3 1 Petammenenr gree, el tee Mulibrtor with Os aed Tigger Die a BE Ege an ie eet Sas Tar oe co eas re risree SnD See ee ee etc opus Sere oe conBmuasenpacp enn Tae oF EDT ane ach Oe Sit 1296 _Os_CDTLRS Fishin ee 8 $15 Fas BF DT Si _IERTctan Shimon hete Baro yes Ege cosegne Se ENTE Hat Shit Regie wiO0 rao S200 1200 LIGA Iesat Freq Dvdes for VER = 92 Iekie input NOR Gate Mesum PD. Se eee ea nano puter coe Parente ra “ se Ris ie vaca Bf Ennoite nc ad TBS ape WAND Bar Gs RE OF ERT eng NOW Gaderer Pri eae Ean nafssoctornr’ Boe ser 1208 00 Ha nano ster on MER Mm Sink rome roe = on RE Scat nan tron 15 Bh ERESSR shesingt ening pu“ at ge en 93 TERT Gta tne Py“ Sa — Taibo 2A NOR Gi te Foye ass Bb EAT eR ap Roeser Fe tT Be ichuomutisnhwon Gee Gror Coes” 0 BEN Srcimeaaten ro SR am BE ML Sunland nen ces encom, = Ean etree ee Bee. She 1S BF ALES iopoudtrprap kate = 85 (Core ct nis "owe a —— Eg a RT ToS "=e egies eee 8522 1298 08 ICL Expandable Dual S:ngut NAND Gate Active 12S BE (Core erinener" buen” 20221-29808 ILL Expandable Quad 2nout NAND Gate Open -H86_Dé_{COTL Hes Invaner Die ihe torer get gitar siamas ora VE 82 cont Ol titna Emons KAN bute ae e225 1.298 0a IC-HLL Quad 223.44nput NANO Gate Active Pullup 133t_Be_ tort ausd's npr NAND Gate Be SB EAR Si sation wat ors Tar Be eat coaereroe ‘oT entr giana td oN WARTS Tm Bl eon acim mena eta cn Soar en tate See eee ETE woomon-om 9335, 1.299 08 (CHUL Strobed Hex NAND Gate Passive Pultup -Dise, | °% oo .Product Index (cont'd) fins _ Fok pats Ae ere ee Se_Na. He. _ Deveson aD 153. Za) TRAC00 Vint 4x Loge Level ‘691287 06 ICON Tage Tomi NANO Gate on) 1432 241 TRAC 60 VAN 4k. Loge Level Soe 3a Oe lea CLo Mw oul Ktip op 13224) TRAC VANE BA Loge Level feet aa Br Sate per Ou ore, 1ia9_3a1_Thuae-co Van a Loe Level S509 1ata Be ERTL Medium Pw Hex iene 1190” 215 TRCS00 URN eA {3005 150_tiee_ Ie Preto 04 A 1330 Zr TRAC VANE toa ‘io 140 L168 1c Petco 8 A 1530.27 TRAC 60 VANE toa Woo 10 Lies te eect, $800 275 TRAC E00 VANE BAH Commutation {sone 1140 N68 Ic Proto, & _1130_2f_TRIAG 800 VAN, S&H Commataton Ware 140_Lvek te Protect, 364 V0 2a ‘F1a0” Urea Te Petcare 190 dat Th) HER Ie Protea 88 A 130 2 10 LIGA Ie Prenector 88 A ¥0_275 140 GA Ie Protector 4 1:it8_ Sat" Surge Sereda Gas Fits, 75 VOC 799 ZH —TRIAC op VAR. 254 Commu 300 2k TRAC S00 VAKL 268 HL Cammucaon or 2 dy Rese eA eee neo pst ty 8 EARS RS rae seas Eines Hig i Eee ssa aaa Ft a Se eer mae ea tae 00 2H Eg manna Sor pee oe aa ae eS er Ta mi Rmserm gy te 34 Ebi newreenzemeomeniapae HE! Reein gy io 8G Eneetecaenecae Ba Gi Rasteecsy 23 2 Enea 114 BEL Polymer Fuse 60 Files Cold Cathode inciesor Tubes Drecty te Ot toate neg say oo SHS ameter ma id Gl eee So HES Ee i sims soa BP td aa a aaa Ae We oh er enemaeameemony a airy i i Plymeric Fun 30 74185 V317 D8” IC-TTL Dual 2Line-o-¢ Line DacoderDamnutipener a Saeray ba ieacer 3 Rectal ie ion os, ERIS cease = tert ere aH Secrest = ae ie He Seeeee Eneaei ene Stepan Hera eset ay nia, sem crt Eoeamemeeron peechein cece sa sae co Soa NT 33 BS eSecce. CE Soi 2 & EMER ECan. | Rie & EM mememeen emma ee seo at eet eeremeer oars Se 2S ERENT nme | Re ie Enenomermese fo Ear ewc torr oe ee eee ono Tare 1316 08. 1CTTL Pare tod 88 Su Register 13 Hh 18 GEE TChae ote IeMOS Hoe B Fson TTS DB TE Gnd pe apap wa TEMOS Oued 0 Fp Pop rae 1318 06 FETT Decade Counter (Can be Conscted in BCD, IEMas Lakeahend Cary Generator 26,0 Sigua Mod JENOS {Bt UnBewe Sfackronon Decade Counter | 74177 121006 IE TiL'Ct ina Counter (Can be Connected 9 +2 ICTTE €Bi hit egiatar wi Sevan Paral Sata Ey One Raa) ad's BO Le i ICTIL Ea Gsdleven Paty Goneatafehecier ICTIL ArthmatcLoge UntFancton Generator IETIE Coo ahead Car Ganoatr IETTLACD Sytvonaus UpDown Coanar wih TRING 200 vRNe 1S A BABU EE ieee ee aenemenger wesieie ee memes Beale te ee ocean SEES 2 ESE ee aeart oe eee sar SS CaO Com ‘Sears 1131 250 TRIAC-400 VANE 40 A. Isolated Stud 74195 1.320 0B IC TTL 4-Ba Parole! Accoss Shit Register BB Bese sctmins eer cea eee, alk OB Reems pas tee eee eeeeceners Son Lint aaa macom Yaw oa bone io ‘IGan Provide +2 snd “8 Counter) Ose Hl iS eesims rom sam om ERPER RATE ASRT oa ue Sigh emer jies_van om Dero fo memaet oe eS aoe a rar aay Wace cee Seer Eth sree Hl ge Wweeees ame IRE Entrees nares ., TSt Bis” TRIAESOO VAL eA Santive Gam yeas vez os WETHCBochde Comter 131Product Index (cont'd) A BE_vemristion 1 ond ne Embe 1-92 1323 0B FEW Hexleting 3 State Bue Diver wth T3258 ICTL Hox Nowinvaring 7Stte Bus Ove wa van BOE ttn Oar on ca Vite Be cade Counter ae eee a ae 3 = 1398 13 ouintn So eRtreet RE, Eea nace ger ESS RRR EBs cn Srp Doce WO eee Leo Dg rier wih MOS Compatible InputsECG® Semiconductors - Replacement Procedures Universal Replacements 1. ECG Semiconductors can be used with confidence because they are specially selected prime parts whose specifications ‘generally exceed those ofthe original part or application. A ‘maximum number of replacement requirements can be ‘satisfied with a minimum inventory of ECG Semiconductor devices. For example: ECG125 diode can be used to replace ‘more than 625 JEDEC (1N) types (1N867, 1N40O1, 14003, ‘1N4011, etc. and ECG123A transistor can be used to replace more than 200 (2N) types (2N708, 2N708A, 2N2096A, 2N311S, etc) plus thousands of other standard industry transistor types. 2. The frequency of equipment repair can be reduced by upgrad- ing with ECG Semiconductors. For example, fa 100 volt, 15 ‘amp rectifiers frequently replaced in an important control nit, replace it with a higher voltage andlor higher current part, as explained in the rectifier replacement section orf the device is overheating, additional heat sinking may be required, 3. ECG Replacement Semiconductors ae available through an international network of electronic distributors. These distrib tors provide local availabilty of ECG replacement semicon: ductors to help keep equipment downtime at a minimum. Replacement Techniques Forming Pins When replacing te original device with an ECG unt, certain ‘mechanical and electrical requirements must be observe. Compre the ead or terminal arrangement ofthe orginal part wth the ECG replacement f necessary, bend the leads to the broper basing arrangement and insulate them to prevent poss bie shorts For socketed devices, cat the leads onthe replace- tmentto prope length. Check te outine dimensions ofthe ‘eplacementf mounting space isa problem. Replacement in tinned stages can generaly be made with @ minimum of tor 1. To.avoid paling when bending aplastic device pin, aways restrain the pin firmly by holding with 8 per of eedle nosed Dilers or tweezers located atleast V8 inch away tom the even body. nternal connections ofthe pin othe june tions may be disrupted if this procedure fe not observed. 2. pins must be spread apar, bend the pin only inthe nar ‘ow portion of ts length, again restraining the pin during bending as per Stop 3. Maintain a bend radius of at least 16 inch 4. Do not repeatedly bend pins. Insulate pins, i necessary, to void shor ceuts. 5. Mount the device before soldering to leads. Mounting (See itstration) 1. Use the proper mounting hardware, such as insulating bushings, insulating washers, etc. called for by the specific ‘application 2 To promote efficent heat transfer, insulating washers, when required, should be thin (typically three mils for a mica ‘washer Use a thin, even layer of ECG424 Head Sink com: pound on both sides of the washer. 3, Exercise care thatthe tool used to tighten the transistor retaining nut or bolt does not contact the device body. 4. Unless otherwise specified, do not exceed six inch-pounds torque (an average male can exert about S0-inch pounds torque with a serewdriver) Mechanical Interchangeabiity ‘Avoid exerting pul ofthe device pins while connecting them to their circuit connections. Provide @ means of strain relief these connections tend to place pulling forces on the pins. To extend transistor life in high-power dissipation applica- tions where a large thermal interface is not provided by the original equipment, the use of a heat sink is recommended when space permits. The ECG line includes a variety of transistor heat sinks, insulator kits, and heat sink compound for this purpose. Soldering 1. Solid-state circuity is generally miniaturized and is most ‘often fabricated on a printed circuit board. Any repairs to this type of circuitry require a well-tinned, pencil-ype sol- dering iron. Care must be taken in soldering, both to pre- vent damage to the printed circuit board and to make sure that the solid-state device itself is not overheated. A good ‘quality 60/40 (60% tin, 40% lead) solder helps to make joints ‘quickly with a minimum of heat. When solid-state devices ‘must be removed or installed, some means must be pro- Vides to conduct heat away from their junctions. Long-nose pliers or hemostats may be used as a heatsink. Leakage between the heating element and the soldering iron tip can cause the tip to be above ground potential. This leakage voltage may cause transistor damage if the chassis hhas a return to ground. To be on the safe side when solder- ing or unsoldering solid-state devices (especially non-gate protected MOSFET, itis recommended that a grounded tip soldering iron be used. ‘The same considerations about line leakage also apply to the use of oscilloscopes and signal generators. Even though the equipment may have a power transformer, the “linefi ter” capacitors which are usually connected between the transformer primary and chassis ground permit an ac flow ‘between chassis ground and earth ground. Therefore, if you Connect the ground lead of such test equipment to a sensi- tive point in transistorized equipment having an earth ‘ground, damage may result. ‘After soldering the connections using good solid-state practice, ‘complete the replacement job witha check ofthe bias, follow. ing the procedures provided by the equipment menufectue 1-33MOSFET Handling Precautions In handling non-gate protected MOSFETS, such as the ECG220 and ECG22, the following precautions should be observed: Prior to assembly into a circu, all leads should be kept shorted ‘together with the metal spring or antistatic material. ‘When devices are handled, the hand being used should be at {round potential Tips of soldaring irons should be grounded. Devices should never be inserted into or removed from circuit with power on. Gate-protected devices, such as the ECG222, incorporate spe- ‘ial back-to-back diodes that are diffused directly into the MOS. pellet and are electrically connected between each insu lated gate and the FET's source. These diodes effeciv bbypacs any voltage transiants which exceod approximately 210, volts and protect the gates against damage in all normal ha dling and usage, CMOS Handling Precautions “The input protection networks incorporated in all CMOS devices ae effective in a wide variety of device handling situations. To be totally safe, however, its desirable to restate the general Conditions for eliminating all possibilities of device damage. CMOS devices may be damaged if exposed to high static charges. The handling procedure shown below should be fol- lowed in order to assure against damaging the device 1. The leads of the deviees should be shorted with some type of Conductive material except when being tested or when actu- ally in the circuit. This wil prevent build up of static charges. 2. Alltool, jigs and fitures, soldering irons and any type of hhandling device should be grounded. 3. Transiont voltage can also damage CMOS devices. ‘Therefore, devices should not be plugged into, or removed from circuits while power i still on 4. fa lead isnot used, it must be either grounded or con- nected to the device circuitry. Which will depend on the logie circuit involved ‘able | indicates goneral handling procedures recom- ‘mended to prevent damage from static electrical charges. ‘otal protection results when personnel and materiale are all at the same or ground potential TabI Should be ‘Should Be Grounded to Conductive Common Point Handling Equipment x Metal Pants of Fiaures ‘and Tools x Handling Trays x x Soldering lrons x Table Tops. x x Transport Corts (Static Discharge Straps) ‘Manufacturing Operating *(Uilize Grounded Personnel Metal Wrist Straps) General Handling of “(Uilized Grounded Devices Metal Wrist Straps) + 470 Kohm series resistor Dry weather (relative humidity less than 30%) tends to multiply the accumulation of static charges on any surface. Conversely, higher humiity levels tend to reduce the magnitude ofthe sta- tic voltage generated. n a low-humidity enviconment, the han: dling precautions listed above take on added importance and ‘should be adhered to without exceptions. 1-34 Selecting a Bi-Polar Transistor for an Unlisted Type ifthe transistor tobe replaced is unmarked or not listed in the ECG Replacement Guide the following procedure can be used to make an accurate replacement saeco Step-by-step, determine each ofthe following parameters: 1. Polarity NPN or PNP Type of atonal silicon or germanium Operating frequency range Maximum voltage, eolector to emiter Maximum votage,eoloctor to babe Maximum collector current Maximum power dissipation Current gain Cave packaging tnd configuration Stop 1 Ista NPN or PNP device? Your fist source of information ‘would be the schomatie drawings. ithe arrow onthe emiter of the transistor symbol is pointing toward the base, you know itis PNP device, or ifit is pointing away from the base, itis @ NPN. wl & J 1B Now let's say for argument sake thatthe schematic has been ‘orawn incorrectly oF suppose you have no schematic, your next ‘ue would be to determine the polarity of the voltage between the emitter and collector. If the collector voltage is positive with respect to the emitter voltage, then ite @ NPN device, Ifthe collector voltage is nega ‘ive with respect to the emitter voltage, then itis a PNP device. Therefore, ifthe VCE (collector to emitter voltage) is postive, its NPN, of the VCE is negative, its PNP. An easy way to remem- ber the polarity ofthe collector voltage for each type is: NP osmve N PN ecanve P Next, you must decide whether the device is silicon or germa- nium. Tis is most effectively done by the use of a schematic ‘drawing. If you find thatthe D.C. bias voltage level between the base and emitter i 0.2 volts or less, itis probably a germanium, device. Now, if you get a bias voltage reading of 0.4 volts or ‘more, itis probably a silicon device. There will of course, be some cases where there will be either no bias or reverse bias ‘Voltage present. This would be the case in oscillator and sync dipper circuits. ‘Another way of determining the type of material ofa transistor is to look at the complexity ofthe rout with respect to the ‘number of components in a single stage. Germanium circuits {are much more complex due to germaniumm's unstable nature with respect to temperature changes and its high leakage cur- Tents, therefore, several components are required per stage to make it stable. Voltage dividers are used to compensate the bias voltage and an emitter limiting resistor is always used. silicon device, however, is very stable with respect to gain ‘when temperature changes and silicon has very low leakage ‘current. Therefore, a single silicon amplifier stage may only ‘consist of one resistor for base bias and one load resistor. Some circuits using silicon stil have more compensating com- ponents than they require but as design engineers have become more aware of the stability of silicon, circuits have become simpler. 1Step 3 ‘After you have determined the polarity and type of material of ‘a device, you next determine the operating frequency range of the circuit in which itis used. Ths is done mainly by identifying the type of circuit and whether itis working in the audio range, the kilohertz range, or the megahertz range. Step 4 Next, you look at the schematic or the circuit and determine the ‘maximum collector to emitter voltage present in the circuit. In ‘most cases, itis best to use the supply voltage figure as your reference. This figure will then be used to select @ replacement device, which has a collector to emitter breakdown voltage at least slightly higher than the supply voltage. Preferably, the higher the collector to emitter breakdown voltage, the bette. Stop 5 Next, the collector to base maximum voltage must be dot ‘mined. if you have determined the collector to emitter maxi- ‘mur voltage requirements, then you can use this figure for the collector to base maximum voltage requirements. Stop 6 ‘The sixth step is to determine the maximum collector current. “To do this, you would consider the DC condition withthe device fully on, which of course would give you the highest current required of the device. Stop 7 Now that you have determined the maximum voltage and col- lector current requirements, you can use them in determining the maximum pawer requirements. However, the type of circuit where the device is used isthe major factor with respect to power dissipation. Hore we have some general wattage ranges for different circuit types. 1. Input stages, AF or RF, £0-200 miliwatts 2. IF stages and driver stages, 200 MW - 1 watt 3. Highor powor output stages 1 watt and up Stop 8 ‘Next, you determine the gain expected from the circuit. This is determined primarily by its application in a crcut. Some typical ‘gain categories a RF, Mixers IF and AF 80-160 RF and AF Drivers, 25-80 RF and AF Output 4-40 High Gain Preamps and Syne Separators 150-500 Step 9 Next, you determine the case packaging and overall dimen- sions. (Case type and size need only be considered where an ‘exact mechanical fits required. Otherwise, if you can fit the device into place, even though its not the exact case, it wil probably do the job as well as the original. Some high fre- ‘quency circuits may require exact replacements but even these Circuits will require some alignment touch-up, especially in the case of UHF circuits.) Step 10 Lastly, you note the lead configuration. (Lead configuration generally is not a prime consideration for replacement tran Sistors although it may be desirable for ease of insertion and appearence.) With the above 10 parameters determined, the application selector guides inthe transistor section can be used to find an ‘accurate replacement deviee. In_an emergency situation where @ replacement is listed in the ECG Semiconductor Guide but you do not have the recom- ‘mended type in stock, this procedure could be used to deter- ‘mine alternate ECG replacements with higher ratings or differ- ‘ent case of lead configurations. SCR, Triac, Rectifier, and Bridge Replacement ‘A substitute rectifier, SCR triac or bridge can be used as long asitis: 1. Equal to or greater in current rating 2. Equal to or greater in voltage rating 3. na similar case 4 Has (for SCRs and triacs) the same or lower IGT rating 5. Has equal or faster switching speed ‘The important facto in point is that for proper heat transfer, substitutes for stud type devices should have the same stud size. ‘This s 60 you can simaly take out the defective device and install the new device without having to drill a new size hol inthe heat sink. In the case of axial lead devices, however, you may subst- tute if the case is equal to or smaller than the original device, Not all ECG devices can be substituted in the above manner. ‘The above-mentioned five substitution factors apply to SCR¢, triacs, rectifiers, and bridges only Voltage regulation zener sub- stitutions are somewhat les flexible. Since each zener is manu- Tactured for an used as a specific voltage regulator, you can- ‘ot substitute a different zener voltage. Testing Solid-State Det Precautions Chimmoens- Chmmetere must be used with pai cr in tra Sit creas st be rreribeed ha the ohater fs tera woage soumce: Als, soe wtrorts oe carat oF alvering high curents Mer text probes wit sharp points faclate checks on printed Sieur boars, Tey marmite danger of ccderaly rdg- Ing adlscentcorctor. Alo, he newae potrs easy poe roa, Verh, or eutce coroaton on the onuctor Fa reading are hen the reslt of nl making good connections onthe pied eral bord, ineirut measurements ar often misleading because ofthe then pth provided by wanes uncone tat boca or ward eed byte abstr supply. An smnpa 8 shoo inva. A Wh ino obmmeter connected nts fasion. the intl Batery pace forward bie on the erator useton of the tnsison ths effectively paces shun wth Re ‘onmmerer Fig. A. False resistance reading caused by forward-biased ‘emitter junction, In addition to shunt paths provides by transistor junctions, the physically small electrolytic capacitors employed as coupling and bypass capacitors also provide low-resistance shunt paths if the ohmmeter's internal supply should polarize them incorrectiy. 135“These components can be permanently damaged by even a low voltage of incorrect polarity. Damage can algo be caused ifthe Polarity is correct, but the working voltage of the capacitor is ‘exceeded by the ohmmeter's supply. Some capacitors are rated, ‘at only 3 volts while the internal supply of many ohmmeters is 75 volts and may run as high 98 30 votts (Most electronic \VOM's employ a 15-volt supply and are therefore always safe 2s far as voltage breakdown is concerned.) ‘As a general rule, ohmmeter measurements in the transistor c cuit should be made by disconnecting one lead of the compo- ent to be checked. This removes any possibilty of a shunt path. However, the reading in Fig. C should be made i the ohm- meter leads are reversed, in which case the emitter junction becomes reverse biased. This requires @ knowledge of the polar- ity of the ohmmeter voltage at the meter’ test leads. Ohmmeter connestions that reverse-bas transistor junctions sometimes run the risk of exceeding the breakdown potential of the junction. Ths is particularly true in the case ofthe emittor junction, which breaks down at lower reverse voltages. If the \V(BRJEBO of the transistor is not known and ia battery voltage ‘of soveral volts or more is used in the ohrmmeter, its best to disconnect the transistor ‘Ohmmeter readings that intentionally or accidentally forward bias a transistor junction also run the risk of causing excessive current flow through the transistor. The forward-biased junction is practically @ short, so that the total current flowing is deter- ‘mined mainly by the ohrameter's voltage supply and its internal resistance. Many ohmmeters including electronic VOM's, sup- ply short circuit current of 100 mA when used on the Rx Scale. This current ean damage many transistors. To prevent any
) (OETVEEN EMETER 8 conmeren onl Cow IDENTIFING THE BASE LEAD ‘onmeTeR READING WaT BEAPNPTYPE —PNPORNPN TYPE ster Fig. B. Hookup arrangement for identitying leads. 1-36 ‘each pair of leads in both the forward and reverse directions. Low readings (below 500 ohms) will be found when the ohn ‘meter places a forward bias across emitter and collector june tions. The highest forward reading is obtained when the meter is placed across the emitter and collector leads. This check ‘establishes the base lead as the one that is not involved in the high forward-resistance reading. ‘Step 2 identities the transistor type. An ohmmeter check is ‘made between the base and one other lead. Ifa low-resistance reading is obtained when the negative side of the ohmmeter is connected to the baie, the transistor isa PNP type. A low resis- ‘tance reading when the base is positive indicates an NPN unit. ‘Testing Bipolar Transistors ‘A transistor that is operated within its ratings with respect to voltage, power dissipation, and temperature is normally ‘expected to have an almost unlimited life. Failures in transistor: ized circuits are more often the result of damage or malfunction- ing of some other component. This is particularly true when ‘miniature transformers and electrolytic capacitors are omployed, Despite the reliability of the transistor itself, falures occur due to shorts or opens in the bias circuitry, temporary overloads, phys: cal damage, or even mishaps while servicing, {A gteat numberof transistor testers and analyzers are available, ‘Some only chock leakage and currant gain, while others are capable of measuring all ofthe transistor parameters. From @ servicing viewpoint, a few simple tests are enough to reveal a ‘great majority of troubles. These tests, to be described, reveal shorts, opens, excessive leakage, and provide a rough check of current gain. Fortunately litle equipment is required. Some of the tests require only an ohmmeter. The more elaborate checks ‘can be made with just a few additional components. ‘Testing the Junctions ~ The transistor contains two pn june: tions or diodes. Most ofthe characteristics ofthe transistor are tied in withthe behavior of the junctions, while the rest ofthe device simply serves as connective material. Damage to the transistor, therefore, almost always shows up as a malfunction ing of ona ofthe rectifying junctions. The faut may be an open ‘or shorted junction, or excessive reverse current (ieakagel. ‘A rough but useful check ofthe condition ofthe junctions may bbe made with an ohmmeter. First, the forward resistance of each junction is measured, as shown in Fig C. In this figure, the con- rections for a PNP transistor are shown. The negative terminal of the ohmmeter is connected to the base. The forward resis- ‘tance of both junctions is checked by touching the emitter and then the collector terminal in ten with the positive lead. A high reading indicates an open junction. A normal unit should show 2 reading below 600 ohms. Observe the precautions given ear- lier for using the ohmmetor. The forward resistance ofthe junc- tions of an NPN unit is checked with the same setup shown in Fig. C, but withthe leads to the ohmmeter reversed, ovmaeren ia too scacey Fig. C. Method of checking the forward resistance of both junetions.ormmeren mio: scaLe) Fig. D. Method of checking the reverse resistance of both junetions. ‘To check for shorts or excessive leakage, reverse the ohmmeter Connections and switch to a higher resistance scale, as shown in Fig. D. Now the ohmmeter places a reverse bias on each june- tion in turn, and leakage current is registered on the meter. A low resistance reading indicates a shorted or leaky junction. Low: and mediurm-power germanium transistors should show @ resistance reading of at least $00 klotims, ‘Typical readings taken with an ohmmeter on the Rxt0k scale are 700 klohms to 1.5 megohms Silicon transistors give much resistance readings. Power transistors have larger junctions and therefore greater leakage currents. Reverse-bas resistance read- ings should be 60 klohms or greater for power transistors, everse-esistance checks on NPN transistors are made by reversing the ohmmeter leads so they are opposite to that shown in Fig. D. Note that the actual numerical reading in ohme is meaningless, because the ohmmeter can only measure linear ‘esistances. The specific ohm-reading changes from meter to ‘meter and isnot the same for different settings of the range ‘switeh, The minimum and maximum values given here apply in the majority of eases. To increase the accuracy of the chmmeter ‘check, the readings should be compared with those made on @ ‘known good transistor of the same type. Current Gain ~ Transistor action may be checked with an ohm- ‘meter by means of the setup shown in Fig. E. The meter regis- ters Igeg before the 500-klchm resistor is touched to the base. Connecting the resistor allows a small base bias to the applied, and the meter shows an increase in current (decrease in resis- tance reading), YQ onMaeTER ce Us Fig. E. Gain measurement using an ohmmeter Testing Field-Effect Transistors ‘Testing Field-stfect devices is somewhat more complicated than testing bipolars and must take nto account the following: 1. Is the device a JFET or MOSFET? 2. Is the FET an n-channel or p-channel type? 3. Ifthe device is ]a MOSFET, is it an enhancement or depletion type? Do not attempt to remove from the circuit or handle a FET unk certain thatthe device is a JFET or an insulated gate-protocted MOSFET. This verification is essential, because an uninsulated- {gate-protected MOSFET may be damaged unlass proper handling precautions are taken. When handling or inserting or removing this type of MOSFET, the following should be observed: 1. Prior to assembly into a circuit, all leads should be kept shorted together by either the use of metal shorting springs attached to the device by the vendor, or by the use of @ con- ductive foam. Note - polystyrene “snow” should not be tused because it can acquire high static charges. 2, When devices are removed by hand from their carir hand being used should be at ground potential 3. Tips of soldering irons should be grounded. Devices should never be inserted into or removed from cir- cults with the power on. ‘Testing the JFET - The forward resistance of a JFET can be checked with a low-voltage ohmmeter, preferably on the R100. scale. Connect the positive lead to gate and the negative lead to the drain or sourea, if an n-channel JFET. Reverse the leads if a channel type. To test the reverse resistance of an n-channel JFET, connect the negative lead of the ohmmeter to the gate and the positive lead to the drain of source. The device should show almost infinite resistance. Lower readings indicate either leakage or a short. Reverse the leads to test a p-channel device. ‘Testing the MOSFET ~ The forward resistance and reverse resis: tance can be checked with a low-voltage ohmmeter on the high fest “R’ scale. The insulated-gate MOSFET has an extremely high input resistance. Hence, we should obtain almost infinite resistance readings for both forward and reverse resistance test, between gate and drain or source. Lower readings indicate a breakdown in the insulation between gate and drain or source. Testing Diodes Diodes and Rectifiers - Because diodes and rectifiers are non amplifying devices, simple tests for shorts, opens, or excessive leakage are useful methods to determine if thay are functioning properly. The following tests are not applicable to focus diodes {nd high-voltage triplers. The forward resistance of a diode or rectifier is chacked by connecting the positive and negative leads of an ohmmeter, preferably set to the RX100 scale, to their respective positive (anode) and negative (cathode) terminals. A reading of about 500 to 690 ohms 's normal for silicon types, ‘about 200 to 300 ohms for germanium types, and for lar type rectifiers (germanium or silicon) the resistance is some- what lower than their resnective diode types. Because high: ‘voltage types may have several diodes in series, higher resis- tance readings ean be expected. ‘As a quick go/no-go test, the ohmmeter procedure just described is @ good technique. the ‘To check for shorts or excessive leakage, switch to a higher resistance scale and reverse the ohmmeter leads. A low resis tance reading indicates a short or leaky device. Germanium diodes should show a resistance reading from about 100 ki- ‘ohms to 1 megohm. Silicon diodes show higher resistance readings and can go up to 1000 megohms. However, some diodes may show lower resistances but function satisfactorily in some circuits, Rectifiers, because they generally have larger junctions, have higher leakage currents. 1:37Zener Diodes ~ To quickly determine it Zeners have opens, Shorts, or leakage, connect an ohmmeter in the forward direc- tion in the same manner as described for standard diodes. However, these tests, although helpful, do not provide the pri- ‘mary information needed for a Zener diode, namely, is the vice regulating at its rated value? A regulation testis accom- plished with @ metered adjustable power supply that preferably iicates voltage and current. Connect the output of the power supply through a limiting resistor in series with the Zener diode to be tested and slowly increase the output voltage unti the specified current is lowing ‘through the Zener (see Fig. F. Now connect a voltmeter across the Zener to monitor the Zener voltage. Fluctuate the current on either side ofthe specified Zener current. f the Zener is operat- ing propery, the voltage should remain constant. || oc voummeren cunts ZENER UNGER Test LA ee cuggenr ni ‘ADIISTABLE DE POWER SUPPLY Fig. F Hookup arrangement for testing Zener diodes. Testing SCRs and TRIACs (Thyristors) ‘The functional testing of SCRs and TRIACS usually requires test equipment capable of supplying the specified gate current (igz) and minimum hold current of the Thyristor. These para- meters are given in chart form in the SCR and TRIAC sections of this guide. “Testing with an ohmmeter is not recommended for high current ‘Thyristors and should only be used for relative indications in low current Thyristors. The Igr and hyoia Parameters of the ‘Thyristor may exceed the source current capability of the ohm- ‘meter causing false readings and therefore, may not always indicate the true function of the device. However, a simple ohmmeter test on low power Thyristors may provide an approximate evaluation of their gate-iing capabil ‘es by connecting an ohmmeter as shown in Fig. G. The nega: tive lead is connected t6 cathode and the positive lead is con- nected to anode. Using the Rx! scale, short the gate to the anode. A reading of approximately 15 to 80 ohms is normal, Note: When the gate- to-anode shor ie removed, the same reading should still show fon the meter unti the leads are remoyed from cathode or the anode. Now, reconnecting the meter leads to cathode and. ‘again shorted Testing of Gate turnoff SCRs requires special test equipment. Field eating of these SCR ictal and yal provides erroneous results Fig. G. Hookup arrangement for testing thytistore with an ‘ohmmeter. \Note>For your test equipment needs, see your distributor for our complete line. 1-38Transistors Bi-Polar Types (maximum Ratings at T, = 25°C Unless Otherwise Noted) oteaor | catscur | aon | mm | Mon] Frew Posteoe “otase | Totmmer | Emiuer | catecor | Oovce | "int | comrant Deseigtion ane Wats | “ore” | “ons” | “coment | oie | me | “cae Fe £00 Tee “Repesuom eveso | 8¥ce0 | 8ven | team | wane? | nee | case | nS fecc1o [NPN Low Noten, HEHE [26 he 2 froma [soo [ecu |uomin frome | ve Arp (Spe 1038 yo) fecers [Wen Hs Gain, nGurara, [ad a ie 7 fee [200 min [rose | He Gen Purp (Compl to ECS12) fecorz [NPS Hi Gain, current, [a7 hs 7s 7 20 fr80min [ros | 16 Gen Purp (Complto ECSIT) fecars [News Wi Gain, Gon Purp (25 20 2 (5 e foo faoomn (wry | 1208 amp fecare —[wP-siGonPurp AF Amp, [eo eo 5 7 78 foo ‘f20min [wan | T202 Diver [Eca16 | NPN: VFA Moo. bo he 2 feoma [300 fooomin faomin (mee | tz02 One Ui Ose fecate [news Gon Purp Smet so ry 5 woo [300 fie (oo unr | ra0a Shana! 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Sw 100 eo is fas so fo min [rozar [t7 (Compito ec). feca2s | NeNSi Audio Amp, LoNoise [120 20 is froma fa foo |aoommn [sesa | ria iq =25 leona | PuP-Ge, Hi Garcon le fs fae 70 faunas [imowe froo | Taea [Gen Pure Ag PAP-Ge, Hi Curent le fas so feo we fawn [wow [rose | v200 [Sen Purp Amp feces [Nensi nipwrAmp, Sw (eo oy fs so js00—*famin [admin [ro | Taea (Gompi te €€20) fecoso | PNP-Si HiPwr Amp. Gm, ‘(eo eo sso 300 ‘Jamin [admin [roa | Tae (Gompito £6629) ecast | NPNSi AF Orver Gut Yeo feo 6 r 3 100 min [roam | Tie (Compto Eccs2) it =25%1 eocie P'S, AF Diver Guineas | 180 6 r 8 "06min |ro-saM | Tie (Compito ecm). it = 25°) EoG36 | NENSi Pwr Arp, Hi Spood [60 faa @ 2 [roofs feomin [roars [Tae Eccaemps | Swichicomal a €CG30) Nowe | MF Mahe ay “on unt pion sho india age oon Atbough omy one paces cage Outlines - Sen Page 13,Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) alecor | Gotmctor | tote | Mx | wm | Pow Pekoae Tose | totmimer | Emter | catactor | Deve | "int | cuvent Descgtion and ‘one’ | "Nake" | ois" | “Curent | ier | tie | “Ga Fe rcs Type “ptenton 8¥es0 | 8Veeo | B¥eeo | tcamm | ‘weer | "y | tee | cose | Ne ECGS | PNPSL Por ovo, Fi Spaead Switch (Compt ECGS) eccsrmce | Manes Compl Pai-containe f160 jo se wo fis Jeomin roses | rae fone each of £6698 (NPN) ond ECeS7 PNP) fecose | NPSL HV Pwr Amp [a0 300 3 [so [ao ho owe 7s compl to ECG150) fecoat___| Dual PNP-S, WiGain to foo rc) © [soma |.200una [160 [acomin fairs | v20 Noise, Oterntal Amo, 200 toa Coron Emi er feeG42 [Dua NPR'S: HiGain te [50 Ey 5 700 | Boone [60 sao min [SPS | T20 Noise, Diferent Amp. ‘200 to (Common Emiter irae25) [eco busi W'S; WiGain to fro cc = 360 | 2oo1enn—[i00—faoomin fons | T309 Noise, Bas Amp (Common “ao0 oat Basel ipa) feces | Dual NPS: Hr Gun, Lo 00 00 = 700 | omnn [100 —[aoomin [aims [7207 Bas Amp (Comron 00 toa er fecaae | nPwsiDaringion Preamp, [100 oo wz [a0 [2s tao —fieooo frosz | ne Dever Gen Purp Amp iTq= 260 fecoa? [NPWS Hi Goin, to Nowe Yas fs © [20 [aso frao|scomin rosa | 716 Jame feces new Si Daringion Mi Curent 0 joes) fe fr ico min |aso00 |o-sam | Te Gen Purp Arp, Switch [ecase | NPWS: Gon Purp AF Pwr [its hoo aie fio |ioowe |ro-z02 | 738 [Out Diver (Comps to ECGS) fecaso | PNPS, Gen Purp AF Pwr [ins hoo 7 - 0 fico [room [roe | v8 Amo, Drive (Comp 6 ECGAS) fecast —[NPNSi Hv, nispeed Swen [roo a0 . - 78 Jamin [28 [rozo [ra u=7vsee ype feces [NPSL HV, HiSpeea Swich [750 as sf ae awe [tos | 128 y=-2 uses ype [e0ass | NPN: HV, HiSpoed Switch [aso rc 3 ns 17 |emin [awe ros” | T28 t=.7 vee type fecase | NPN, AF Power Amp fo so i cy fro Fcowe [froze [rar Jecasames | {compl 0 Eccss) fecass | PNP, AF Powe: Amo (Compl to Ecos) lecassucr | Matches Compl Paincontsing {150 150 . 2 50 les cop |ro-220 | rar ‘ne each of ECG5¢ (NPN) and ECGs (PNP) fecass | NPNi, Hi Goin, Non: hoo je 6 P 0 hs 500 min [70-220 | Tat Darlington Amp, Switch, Pass fecass | NPNSi Hi Power Audio ry 00 °| \7 200 «ao faomin [reas | T483 Output (Compl to ECGS) fecase | PNPS, Hi Power Audio ry 00 |v [200 «io faomin [ress | Tax ‘uit (Comm to ECGSE) fecaso [NPN Power Amp, AFPO, [140 ry 6 20 aso i soy [ros | rz JEcceowps | Gen Purp (Compl to ECGs fecast | PNPS: Power Amp, AFPO, JEcasimps | Gen Pup (compl to Ecco) JEcGsiuce | Matches Compl Pair. Contsine {140 40 sf ww soy ros | ras ‘ne each of E6G80 (NPN) and Eecanial fecass [NPN UHFAicrowave bo he 3 faoma [aoomw |schewe Jao [revon | rao Amphver Spars @ 20H NPS @ 2 GH Notes: MP. Maton Pi Pact Outlines - See Page 1.91 ‘nar pcapes we shown kas cange'n ropes eu none package 1-40Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) a = “Fosuee | Toemttor | Emer | collector | Device | "int | Current Description and ‘ors vos | “Vots’ | ‘Curent | Diss-t— | mite | Guin Fe. £00 Tyre “Aepteation B¥e00 | ®ve | 8¥eB0 | teams | wom. | ee | coe | Nee fecaes [Pn UnFAcrowave rs Fs B soma [asomw fascrr ]oo _|rrvea | Tao ‘Ampit Speed Sw Ivo Gpe 10.68 6 1 Che NFS do typ @1 Gie fecees | NPwSi, UnF Microwave jzo hs 2 fzsma [re0mw screw [awe [aris | te2 ‘Amp, CATV, MATV. feces | See FET Selector Guide - = i Fs e 0 1-06, Fy fecce7 | see FET Setecior Guide - = eral a 7 i - 90 157 fecoss | PwP-Si, Gen Purp Hi Pwr Amp (Comp to ECG388) lecossmace | Matched Comp P ad J2s0 5 6 230 amin [oop tos | ree Cantsins one ech of £06388 (NPN) and ECB PNP fecoes | NewSi, UAFWHF Am, bs las ja froma [2s Jeoo min. [row [rose [Tie Ose, Miner eee [eca70 | NPN'SI AV Fw Amp, Switch [760 80 6 0 30 foomin [admin [roms [735 feoart | NEN, Curent Amp, so 7 20 [200 ——*io 20min [ross [735 Fast Switch E0a7S | NPN-Si Hi Pwr Amp, Sw 00 loo 8 5 20 Jsomin _faomin [rom | 730 eca7e | NPN-siCATV Broadtond [so [so 5 fa 5 fs00 amin frosty | Tso eccremes | Amo eosr7—[NPN-Si.CATV Broadbend [0 lao 5 ‘ a8 feo amin [ross | te Amp core Yuen nF PO, co, 27s, fs fs a 8 5 7 smn [rozoam| 139 fecare | NeNSi.aFPO.c8,z7MHe [36 fs a 2 0 fsmin_[rozo2w] 39 feces | Owat PrP=5i Swich, OCio ‘feo g 5 6 ator f200min|i00min [rors | 712 VHF Wte=25°0) 3 otal ita= 25] fecoes | NPNCSI Sw, Gen Purp Amp [70 jrovcesy |e * rs jabomin|iz0min [rose | Tie it,=260] roase | NPN: Hi Gain dC jz so 6 is 0 is faoo min [TOs | T28 Regulator, AMP lecoer [NPN iPr Linear Amp [250 psowcen [6 0 oo is min fros | 128 Jecoszmr* | (compl to Ecces) fecasaue. TPH Siti Pwiinear Amp [250 poem | ho foo «i 20min [ros | T28 feccss | NPw-Si, Horie Output with [1800 [soo 6 7 0 I= Bmin [tos [128 Damper Diode feccso—[rvPwsi, Wi Gain. Gen Pure [120 20 5 soma [75 faso 20 min [ro-sem | 718 ‘Amp (Compl to ECGS) tao]. Ecos [PrP-5i, Hi Gain, Gen Purp [130 20 ® oma [75 so 00 min [TOseM | Te Amp (Compl to ECG) itp = 250) feces | NPN-SLAuSiPwrAnp. mi [200 200 6 hs 780 Ro faowe [Tess | raat ‘Speed Sw (Comp to ESG83) feoass | ri, Ausio Pwr Amp, Hi Speed Sw (Compl to EEGS2) JEcasamce | Matched Comp! Po-Contains [200 200 6 js 150 Ho romp |reas | rest Jone each ECGS? NPN] and FEc83 NP) Ecce | NPN-Si Gen Purp Pwroe [300 300 5 5 700 f2smin faomin [ros | r28 Regulator Note NP: Matched Pa { Freuonoy a which comenon emit: currant i 700% a law trequeney in oboletepocage mey be encountered inthe eld r shown kindastes 9 change progrse, AthOugh ony one package 141Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) Soca eee ee me] = Se ee oe ee omens | te | Pe | See | mee] ee | | oe = ae ee ey ets ee eraee |e | ede | ae | a a Fae ea tsar fevameommrera erp sie, Please te foe ee ores ae a oo aoe fae ovens fo awa ene ; aie — pars iteon oma Ya aaa — par oe amg fo ea ee ep eer ase parse ect fesse fe fo Ps tas wa tia lyon ane baer Peone fo wee ef RS eon Rise ian fence beer hemes fees free fase fo eae ae ead ea CC ine mecearrcona > baat [Sw [iw fou Iwas rom To sana [neal ieee fafa [sa fee che lem ioe Te = abe ara — pen scone aas Bisa afr me ; 2 a pense fe ioe feo am — [mires eh oom Ja eee eo Sa sores’ |peneyieteasgonss fey fe ale Te osm mr ime foe saan fren nents wef ep Pl aan fama eee fae foe aaa fens tases one fo awe fr roe adores maremntetes fe ]i seem fae pas ales fiom aaa | Rre eave as wae ae aia [ete eieniee SR de fi he ee ee car femrennpenee fie espe fafa acein [newer oe ee ic a CF ao lee fe hh ee ee memes fe a ie he pele fee Ema ae, 1 Froqoncyo wie common amie curate 70.0% of low raquency asin Wen aternate packages ae shown ineats a change progres. Athough only one packages avaiable, both packages willbe shown a ong a the 1-42Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) Coteaor | cance [tent | mm | wm | Few “eibase | tormmer | Emer | cotector | owvce | "in Deserition and ons” | “vons” | “Mate’ | ‘Curent | Dis. | te Fa ea Te "Roveeston aveso | veo | even0 | tcamme | wate? |" ne fecarat [PNP Ga, AF Pwr Output fae ao Wo [apex fe fF TH Jecorsies | (Compito ECGISs) Te= 63") fecaisa | NPNSi AF Per Output eo eo sf cy ho jeowe froze | tar FEcGIsam | (Compl wo ECG153) fecciss | PwP.si AF Pr Outout (Compl o Ecs182) Jecarssmer | Matched Compl PairContaine {60 60 s |r 0 ho Joop |roz0 | ra one each €CNE2 (NPN) snd C6169 (PNP) fecctse NPWS: video Output Amp [300 00 7 s 10 Jeo feo fros [76 a-250 fie=25% fecates | WiM-Ge, AF Pw Amp [se 0 to [Speak [75 Fr fiewe [res [rz (Compt oEcoist) fecars? [wows wvaFpwrAme [ooo 00 3 5 moe fo fs0min fTon26 | a5 (Compl £6638) fecarse | PNP.Ge, AF Pwr Amp [sz [se oft 1s fs sone [ror | Jecarss | PNPSi AF Preamp. Over [> Sw (Compl to ECCIAM) Jeccrssece |Aaicnes Compl Par-Contsine [00 20 s oft 200 |20 fro [rose | ri6 fe oath ECGNZAAP (NPA ira = 2501 snd ECG159 (PNP) feccteo | PNP-ce Rar Amp, Oe mix [30 power [5 froma [aco foo owe [rom [tv ita =25°) fecaves | NPWS: video Amp 0 forces) 25. [zema [200 fromm Jeon [rom [ta ira = 25°) ecciea [NPN Si vor oh 00 00 & fBeora. | 00 min [TOs | a8 0 peak [ecctesa [NPWS Hore Det foo foocen_[s Topeak [100 po [ros _| 28 fecaise | NPNSi vert Dot a oe 0 Sain [eo roa [ve Jecaves [NPAs Horie Det 00 | raoorees) [s_|s Ey = is |roa_| r~ Jecat72a | NPN Darington AF lao 0 2 (a a0 (oo 7000 min|ro92 | Tie Preamp, Medium Speed Sw ita 250) fects [NPNS: AF Pwr Amp soo 00 a_i a0 o fsowe [Toss _| 125 lEcet7e |) PRRGa AF PwrAre ls 2s ef . 700 [now [ros | Te [ECGITeNP "PNE-Ga AF Pw Are so 20 2s 108 35min [sso [roa | 12 fecate0 PNP: AF Ame (Comoite eccren) leosweeace | atcred Comp! Paiccontsine }r00 rooicer) |s — |s0 200 [amin Jasmin [ros | 128 fone each ECG (NPAT and Eeetea iene) fecarer | news, ar Amp co rooicers fa [30 20 [min [smn [roa | T28 Jeccremre | (comp! to €Co80) lecates | upwsi AF Pw Amp, Hi Speed [oo oy s |e © 5 fsomin |To-26 | Tas leccreaes | Sw {compl to €cuta5) fecctss | PNP-Si AF Pwe Amp, Hi Speed Sw (Comte ECO). eoowswcr | Naren Compl Pt Corsi Jn 20 5 |e 0 a 20min fro-i26 | ras Ectas (PnP NPWSi AF Pwr Arm, lo 60 si 2s ‘(so lsown [roo | T36 Speed Sw (Compl €C6187) fecataea | nPw-s. ar Pwr amp, Oriver [50 so . ~— 70 fiso |somin |rooaw| t39 [Comolto ECote7At fecate7 | PNP-Si AF Pwr Amp, Hi ho 60 . — 2s (so json [roe | Tse Speed Sw (Compl to C6106) eng she 1-43Transistors (cont'd) (Maximum Ratings at T, = 25°C Unless Otherwise Noted) ‘oleaor | colnet | Geto | Mm wm | Few Postar “etese | tomer | Emer | catuctor | dove | "'n’ | curent Description and ors | “vans | ‘Wott’ | ‘Curent | oie'ty | mite | “Gain Fe 00 Tee “Renton even | ever | eveno | teams | wen? | tre | case |e leeatera | PRPSL AF Pw Ame leo cy es 70 fis so min|To-azm) 139 (Compl to ecor06 FECa190. | [NS AE Puram. Hone fran feo 5 F 10 foo aomin |ro-zozn| 136 Drier eostesa | PNPsi AF PO lo jrowes) [5 5 @ 20 [20min frsens | Tz (Compl to EcGr92A) itg=250 feoGiss | NPWS Gon Purp WV Ame, (80 he a 3 aso iso | towe [roar | Tie Speed Sw ita = 25°) fECGI9=A | NPWS: AF Pwr Ampiorver [70 power) | is |e fsa |aomin [ross [Te Po38W min 50 Nhe 120) oats | NPN, AF Pwr Output loo jeorces. fs [7 Ey re oe (Compl to £26187), ease tin = 25°) feosie7 [PNP St AF Pwr Ouput fo jeorcen fs [7 a00min [20min [rome | Tar (Compl to Eo6196) eccioe | NPNS: HVA Sw soo oo cess |e r Fo feo [T0220 | Tai feociea | NPN-Si LoNowe HiGain [70 so 5 7 360 aomin faoo [roar | Tie Preamp iia = 25 cazit | PRPS: AF Onput Sw oo Fs sf fs2s [200 |iz0min [T0202 | T28 (Compl to Ecc2i0} tie= 25 1S iq = 25°) jeeaare [NPN Daringion Or Sw [70 eo . 6 a - ra min TOBY | F484 Senos Peep 1B pee ry roazis | NEN, Deaingion Oc Sw [v0 hoo sie a = S00 min] roars | Tae Series Pass ty= 1.6 pees WP oazis | NPWS Hi Speed Sw, Core 0 io é rc 7 soo eomin [roar [7 jecaa7 jo feo et ie 7 hs [emin roar TF econ o fe 7 as lamin [min [rose [T= Jecaaws [PNP AF Outs. Sw (Compl to e130) Jecaztowce | Matched Compl Pai-contsine |100 roiceny 7 18 10 amin fz0min [roa | 128 fone each ECG130 (NPN) and C6248 (PNP) lecaaz0 tee See FET Selector Guide lecGaza | Page 100 fecaz2e | NPN-Si Final RF Pwr Ovo [60 leowen 2s fa 0 jzo0 [sow froser | 125 (awsome) fecaaas [NPN AF Video & Sw eso 50) 7 fr we o faomin [Toser | 123 fecazae | PNP-Ge, AFP Output ls ssicem ez we a0 [tan |rosa |r ecazzenes feca2z7 | NPNSi HVAm, Video foo 300 oi 7 5 [so jaomin [to2s7 | T7 Our fecczzs NPN: VHF Osc, ix feo ao @ [soma [as ooo [som [ros | rie amp iin = 25° [eecaaa | PNP: Davington Amp 0 30 fs 3 2s fins [0000 [rose | Ti6 a= 25°) te Notes: + MP. Matched Pir { Hequonc whic common emits current 70.0% ow faguaney gan ‘inom arpa pctape oe shown indicts a changem progress. Although ony one package is waiabl, both packages wil be shown cane pnchage mey be encountered inthe fa 144 Package Oines - So Page 1.91 tora astheTransistors (cont'd) (Maximum Ratings at T, = 25°C Unless Otherwise Noted) Goleas | conser | oma | wax | Max] Few Package “Bane | Toemiter | Emer | catector | deve | “in” | curant Deserption end Wot | “vars | ‘Vora | ‘Curent | Ole | mite | “Guin Fe. eco Type ‘Rertesion weno | ever | BVeno | teams | wer | ee_| cue | no. lecaass [NERS Fina Video Ey ao Bi 7 ae fan fase from [ne veo) lecaze | PNPS: to Noise, Gain AF [60 cy = [soma [200 [oomin | atowe [row | tie Preamp Ta=25%) fecazs [NPN Final RF Pwr Owns [65 jsicen) [a [name fa J200min |aomin [TO-I0 [Tat (Py5W. SOM) fecazse [NPN Final RF Fr Owner [70 roiceny [af paie fas fico [20min [ron [Ta (1310. 50 mah, S56) ecG2a8 | NPNSi Rorzontal Outport _‘rs00 —frsmorcen |s [> Ey js [roa | we fecc2s0 | PNP. HVAF Arp, video [300 00 5 5 10 Jcomin [aoe |ro-20an| 736 | Output (Complto ECs 181) Me=25) Tq=25) fecaaat [NPN AF Por Sw ao ao m= |F C Ee fasmin [TOD | Tae Comet to €esza2) fecaze | PRPS AF Pwr Sw eo oy res |e @ P fe min [rosso | tate [Compl to ecasan) fecc2
i/ ca fae00 we |T03 | 128 (Compo econ), Jecozss | NPNSi Dartington PwrAmp [80 a0 = [wo 1 = acco we [Tos | 128 (Compl wo Ecazae) feca2as | PNP: Oarington Pwr Amp a0 a so 16 000 we [tos | v8 (Campi eczas) fecc2a7 | NPN: Oarington Pr Amp [100 1 a [a 1 = 800 ve [roa | 128 (Compl ecazaeh feca2a0 | PNP: Oacington Pwr Ame [10 fo 5 2 he [= 3500 we [ros | 126 (Compo €csza fecaza9 | NPN: Darinaton Pwr Amp) * ho 5 [e 1 ast we [ros | Tze (Comp! ecczs0) feca2s0 | PNPSS; Oncington Pur A100 ie 5 [e 80 3800 we [ros | T28 Compl to Eczas, Jeccast | NPNSi Daringion ®w Ame [100 fo ° fe 1 ato we [tos | 128 (Compt to foe82) Jecazs2 | PNP-Si Onrington Pwr Ame 100 co 5 fe © faaowe [tos |e compl to €czst). Jeca2s3 | NPN, Datington Pwr Ame [00 oy 7 - o = 2000p [rows | THe (Comp! vo Eoese). Jeca2se | PNP: Onringion PurAme [80 oy 7 o 2000 we [ro-r26 | Tas {Compl to Ec253), Jecaass | NPNSi Hove Diver Are Sw [328 Ey = 7 7 lsomin [20min [roar | Ti7 feca2se | NPR'S, Daington wibemper [450 co 6 [os 10 faomin [Tose | Tae Diode Spend Su Ht froze) Current y= 50 nsce fecaaet [NPN Daringion Pwr Amp [roo ae 7 ie ee 7600 min] TORRG | Tar (Complo €ccne2) Jecaze2 | NPS, Darington Pwr Ame [100 rs 7 es ; 1060 min|ro-ze6 | Tar (Comp! to ecze). Jeca2es | NPRSi Dartington PwrAme [100 ico 5 10 a 000 min|ro.zse | Tat (Complo eoazed) Jecazes [PNP Davington Pur me [100 10 = (e cs 7000 min|roza0 | Ta8 (Compo €c263), Jecazes | NPN, Oasington Pwr Amp (50 so 3 [s cs voceo [rosa | 38 Swatch ie Note + P- Mane Pac ‘whan aternate packages are sown neato change in pogrese. though only one package i ‘bso pacage ey be encountered int kage Outs - See Page 191Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) ‘Color | catector | Berero | Max | wan] Fea Package “etase | Toemitar | Emieer | calecir |” Deve | Tin’ | cumont Descigton snd ‘wore’ | Wome | "ote | “Camene | ote? | ate | “eam Fe 03 Type “Rekeaton 8Vcz0 | Vero | BVen0 | teams | “weer |" tee | coe | Ne Saas. (| NENG PargtonPwr Ane | cy is fs ext fao00 —[Toza2 | Tae Switch rn feca26s | NPN, Oerington Pwr Amp (50 so 3B iP 10 = 1000 min ro-202 | T38 Compl to ECo26s) cease 7] PNP Ontngen Pw Aro feo so hse 10 = c00 min|ro-202 | 738 (Camptioeouese) fecaz70 | NPN-Si Oarington Pwr Amp [100 00 fs ho a 100 min|ro-ae | Ta61 Switch (Compl to £06271). rro-216) fecazri [PRPS Ontington Pwr Amp [100 00 e ho w= 000 min [Toa | Tae Switch (Compl to 66270) fro) fecczre | PN-SiDaringion Pwe Amp [00 eo esol so — 3000 yp [Fo%s | 125 Switch (Compl to £06275) eocz7s | NPS Osington Pwr Amp eo sie so I 3200 we [ro-88 | 725 Switch (Compl to C6274) ecsz7e | NPN, Broad Band RF Amp 0 Ca a5 [i200min_|somin [rose _| Te eoazes—[NPNSi. Hv Curent Sw, [000 25 fe 10 100 «ie smn [tos | v2e one Output fecaase | upwsi, AF Pwr Amp a0 feo 5 6 1 (6 femin [ros | 128 EcGzeamr> | (Compl to EcG285) {Compo €co260), Jecczasmice|tsiched Compl Pa 20 80 5 16 wo |e. pomin [roa | 128 one each €CG288 (NPA) ond EcG2es (rr) feoazs7 | NPNSi.HVGen PurpAmp [300 300 spss asso faomin [rose | Tie (Compl'o ecazee), Tas 20) [ecazee | pwP-si HV Gen Purpamp ——fa00 00 mars asso jaomin [Tos | Te (Comp wo eca2er1, ira=25°0) fEcG209A | NPN, AF Pwr Amp foo eo 5 = soo [iz0_[ieomin [Tos? | Tie Ecezs9aMe+| (Compo ECG250A) a= ao jecaz=0n | NPS AF Pwr Amp (Como! €co256A) Jecezseamce| Matched Compl Paircontains |100 0 5 5 soo fx20—froomin frose | ni fone each ECG209A (NPN) an a= 20) EcG2s08 (ener fecaaas | WPNSi Por Amp, Sw hao 20 se o Jamin [ree |roz20 | re Compl to Eca292), fecaasa | PNP-S Pwr Amp, Sw compl to Eco2si) Jecoasomcr | Matched Compl Paiccontsing |120 20 sa 0 Jamin |rs%e |ro.220 | rar fone each EC281 (NPN) and eee252 (en) fecazes | neni, AF Pw Amp leo so 5 fr 20min [rae | 720 ]Eca2aame*| {compl vo €oG298) fecaase | PuP-Si AF Pwr Amp leo eo set 7 ja00ia0min frre | 120 {Compo eco) (oat Sink) a= 25 [ecaao6 [NPSL AF OupuvDaver fre o fi ie fisomin [20min [rouse | We fecaze7 | upwisi, AF OrvenPwr Amp [ao eo peak 20 [somin ras | 120 Jeca2s7me*| (compl vo E0298) fecaass | PNP-Si AF Driven Amp foo o is fipeak fas hizo |isomin fixe 120 (Compo €ca297) ita = 251 lecas00 | Wew Si, AF Pwr Outpt so fa is fs 7 Fo faomin [TORE |e |ecc00me* fecasoe | NPwS:, RE OriverPwr Ame —_|100 so 6 a eo fa min |TO-20% | 37 Not: MP. Matcha Pir {Frequency wc common miter curent it 70.0% of ow foquancy gn ragres. Although oty one package fava obtolio package may be encountered inthe ls 1-46 Pactage Outlines - Se Page 1.81Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) a a Pacts SeBeee | tormmer | Emiver | catecior | eves | "int | coment Deserton and ‘wons’ | “Note” | Note’ | ‘Curent | ots'ey | atte | “Game ee E06 Te “Rvteston sveso | sco | 8¥es0 | teams | “woes” | “he | tee | core | o- cc fo fe __ [spear |e [a 00 min_[FO-2023 | Ta? Feasts [ani arn Om Ame fos 0 ase Jooomin [25min [rose | re fecasi2 | seo ret selecer Guide = E Seats Es r Soafae |= Page +60 feces1s [NPNSi VHF Tuner AFAmp [a0 0 @ [oma [a5 Jaoomin [25min faras | Tao Tq=250 fecaais — [NPNSL AF Over hoo cy soa 73, [eo foowe [scar [re Ta=25%0 fecas16 [NPN Lo Noise UNF Amp hs as [soma 200 fiaoo _|ismn [rom [ta (48 8 moe 480 Mo iq= 250 ecaai7 Pa AF er uo faeces fe [is mo froma [arco [Tse [ecaav@ | NPRCS, RF Pwr Outpt fe a w [= min [arsar | Te (50, 30 Mie) sceator [NPN NGC ContaleaTe fw fo a feowa |e jscomin [ssw [ros [Tie Arp inludes Meal Shee) iin 260) fecas20 | NPRCSL RF Pwr Oxtpun ls jase fe Jo eo oo min [erin [asosS | Tae (240 We 7S Make fecas20F | NeNSY AF Pwr Output i he ie a fo min [Semin |aRSOF | Ta P0175 eoss21 | NPWS: Hore Den jroo [700 5 is ry E Fema [row [Tae fie= as jecasas PPS: AF Pw Amp fo hoo 7 7 anin [ros [Te (Compl €cs28, tr [ecasae | NPRCST AF Pwr Amp co foo 7 /— 7 cy fomin [ros |e (Compt €06323) fecal) feoosas —[Newsi A Po, 1430 0He, (a0 0 ors 15 E arses sow fecea26a | Soe FET selector vide Bunales 7 = Pope 188 fecasar | NPWS: Pwr Amp, Sw 80 50 ois rao ‘ao fomin [ros | 128 te=250 see 20 max fecaaan | NPWS: Powe Amp Sw reo ry 7 Ye veda f2ma [ros | 28 00 ma fecaaas | NPN AF Pwr Amp lo 50 25 [isp |s = — frows [re (380 min 27 We) [ecasa0 | PNP-Ge, Fast Aw Sw E fo ras wi five [rose | 78 EcGs91 | NPNSi, AF PO, Rep, Sw rr: oo 5 |e cy Sein _feowp [ro-za0 | ter EcGssimP* | (Compo E6292) fecass2 [PNP AF PO, Rea. Sw [comol to ec33t Jeceszamce| Matches Compl PirConaine {100 00 si te: 0 lamin |4oryp fro.zz0 | rar fone each ECGS31 (NPN and ECS2 (PNP) fecaasa[New-si.nrPo,1¢s0me, |astcesy [ie . |e 75 = fomia |araar | 57 sow feccase | NeNsi.arPo,ias0mm, ostcesi [ie [se 8 = fomin [arses [Te ow. fecasos _[NPNSiAFPO, 1490 Mem, [as fs io mf fomin |arsor [Tse sow. fecasse | NeNSiAFPO.1as0MMe [as 2s ar) 0 fomin |arsosid 12 sow. fecoss7 | NeN-Si AF Ovver.2750 mm, [a he Fa fo femin arses | 759 ew f 1 Froquoncy a which common emit caren 70.0% of ow frequency ‘ime atenatepackges ne shown inazatas change in roprest. Although anyone pacage i avail, bth packages wil be shown ‘shanna package may be encountered nthe fl.Transistors (cont'd) (Maximum Ratings at T, = 25°C Unless Otherwise Noted) Cotes | cates | Smet | tim | ton] Fw Peco “game | townmer | Emitar | concer | owes | “n® | carant Dagon ss om’ | Twcee” | Ss” | rem | ohe'tp | we | Cai te fa Tee “onexton Ves | Prec | erego | lemme | ‘wee? | "u' | tee | coe | ne escase [WPS AF Dnvera Gupte he 7 [as fo sve |RsaS | T 2750, 20 esosser [resi aFOvvera Oupe fos he a fas feo fomin [arser [7s so Mts, 20 fecosse [rows aro, z7-somie, few fe ~~ wo f= amin frrsosid roe iow ecaaee [New si nr Po, Over fs he ards 7 |= frown frre | 20 376 we a0 mw ita 260) esose1 [news arPo, ne-rranne, [pe he a feo Yo |= lean —frosaaee re ecasee [News area, weiremne, ps hy . - wf owe rowed Tam re ecases — [Nesi arro, weiremne, fs hr a fas fs = ove frozoed Tam ecoaee [rvs arro, worrewne, fs hi rn cy owe [rears | Te8 tow ecoses [Nest arro, weremne, be he a de fe min farses res sow eccase [nw si ar oivera Preaives feo he z. fi Jeo fromm froas [re ‘Sonne YW fra=260) . oa trea eae | Wea RFP era ew [oe fe hf 2 [= [min fares | eccace [Newt aro, 367m, fon he ~ pe po f= Jomin Yarns [ree now escaso [News aro, weavame, for he Cn a ee few Fear Lens agape he CC SC TINUE fecoas: [rst arPo, wane, foo he a ie es = Yerin farses [ree pow feccass [news nero, weavamna, [ow he fo fas [= ]swe |arsore | reo tow escass [Pes nro, saves, oo he afi fe [= fein farsor [Ter escass [eves aro, was7awie, foo he ae fo min farser [Ter Et Eeoaer. hnensrpripoasazoowe fos ls afi te f= femin ares) tar Tc ww Y eoaase [yews arro,s0a00me, fos bs om m0 jamin [arses | Tea pow. cae — NEN FRO. ae, ls aie fe = |omin ares [9 Hho Dew a feccaer —[rewsi nro, sarsiamne, ow he a tas omin [ro-eec] Ti 0 fescace [news aro, sarsiawie, [ow he a omin faves [var rw fscoes [news nro. aarsiawe, ow he a fe fe amin |araes [re cw fesoass [rns nro, sarsiawwie, ow he 7p so amin |areare |r iw fesoace [nrwsu nero, aa7siawe, [oo he 7 - ps = faomin Yarsore | Too pew eon less prgonaarsiawme, — [o6 he aie 7% pomin |arsore [veo Tc paw EL ots + MPa Pa Pctnge Outines-Sue 1 Froqancyt ich common emir erent 70.0% flow frequency gin ‘nr uae ae sown inate a cangein rors enouh on one aap s vat aka il be shown ng athe 1-48Transistors (cont'd) (waximum Ratings at T, = 25°C Unless Otherwise Noted) er es Pecage Desription nd our’ | Tyce | Sim’ | See’ | oes, | ae | Scam fs roa ype “tooo 8Ve00 | Veco | Seno | team | ‘wenr | “h' | tre | come | ne [eeaaea —TreRSLAF Po. corsvone Jos he aie fas ina Pr Jeow. ease [NPN vr Oun Sw AF Amp [oso sc 0 po pomn [rows | fecoam | wenesi ar oriver o ro hs hoon [rovas [ras (compito econ cea | Pas: AF Dae he he =e foes roves | a omplioecesra feeaare [NPN vor Oot, AFAmp favo is oh Fsoue [roa [Ta comple cea fecamre | wens Pow amo fo 0 2 [fis fo froowe [roam [ra [eoaar | NENG Por Be FO, Sm Yow se = io fs Jao feonin roan ra Rep Gompito £66279) care | Pn-s Pwr river P0, 86 [oo eo = fie dae ao —fetmin roan | ran Rog eomplto€eGa7 scars [NPN-Si HV Speed Pr Sw [700 0 fa [wo [amin [oon [roam [ta coast [PNP AF Pwr Amp so ha ls jo i fom [reas | rs casa [Now si AF Driver a0 oo = roo frown | re {Comite eee) eaaea | PPS: AF Ore ha 00 3 faa | 00.» |TOsam | Te [case —_|NPNSL Sw LimerAme ie a ar as ___|irmin [Rone _|roas | [ecames _[NPNSi HV HiSpeouSw ——_ foso so fe fo fwo [= fon» [ros _| rae fecaase | NPN-Si HVHiSpeedSw [ono exo eo fo |vs_|- ow [ros _| re fecaaen | NPWS Pow Ams. Sw oy so © [so Jaso |oomin fromp [roe | rze0 fecaass | NPN. ip AFAme [ooo sa = |e fas Jann oon [ros | v2 (omplio eceea eae [NPN Hore Output fisoo __frsoovcesh [sa 100 [amin [min [roa [v0 fecaase | NPN. Px Amp Speed [roo 0 rn feomin rose _| re8 Sw comp wo E6305 iro coast PwPsi Pwr amp, Hispees [reo 00 eo fe feomin [rose [rae Ew icone eeea00 ror feceasa | wens Pr Amp isoeed [roo oo fs fs win ve Sertcompt tw £6353) eccase | PnP-si Pwr Amp, speed [100 oo fs fas pp psmin froap [rae Ew (Gol wo E6300 iro cane [NPWS HV Pwr Amp, Sw (0 co ep wo fas faomin [roar vee froze eccaes [rns wide bona wirmone [a0 fe 2 [iowa [avo fasen fem frome [ve mp, dno fig =z Bacave | NPWS: Uneor Arp arma a 7h 10 [ismin —|ooye [TOs | Te Speed Sw omplto £0307 fecaasr [PNP tine Amp avi oxo 0 ef 10 [ismin |sowe [ross |e Speed Sr Compo E96) fecaase [Pwr si, veric! Den, aio favo iso ef = ie hove ‘in (Compo EC) fecease | NPN-Si video Ovi ono sco ea @ feomin |ro0min fre | r20 fig=26°0 Notes: + MP. Mates Pai ‘bsoetepactoge may be ecaurered inthe ld Package Outines- Soe Page 1.91 ble, oth packages wil be shown songs the 1-49Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) algcir | cotector | Sewte | Mex | Max | Fo Postage “eave | Tomi | Emivor | cotecir | Device | "nt | curent Description and ‘wore | “Vans” | “Vets” | “Camene | ose'ry | mite | “Gain te oa Tye “Reston ®vca0_| cco | 8¥ea0 | teams | wan? | fee | case | Ho. feccast | Seo FET Salocor Guide = = se = =e Ss thru ECG4t9| Page 1-58. fecoare | Newsiarro.zs0mm, [o6 he ls fe 0 omin [Resor | Tee wow. 1250 Jeeaer | nens Ar Ovex Po. be he fe ao Jsomin 20min [roa [Te Vroes7a a nw Jeoows | NeNS. RF meno, bs fi a i 7 : pomin [ross | Te toes7aln, 22 ae et a he a ooo [os fSmin [ro-202c| Tao Jeccar | uewsi, nF Po, 16174 He, [oe he ae hs owe |resore | reo sw feccare ews, ar ro, acrsizmne, [oe he a5 [ao fas = min |r039 | Te naw feccasr— [npwsiF PO, eces7o ne, — [ae he as re = 20min [AF a6 Tet ew fecousz | pws, nF PO, cero mre, [oe he ao as = 20min |RP-2aree| Te ESoraR jp REE STO he a - ca 20 min |nFerea| Te feccuse | ew si nro, ace a7o mre, |e fi a fro he = 20min |RF-aaree Te aw ecous [rus nro. ecoeromns, fo he a fs 0 - emia |araare | Tee feccuss | now.si ae matipior Amp, [a6 Ey a 6 as fe00 min [20min froze |e orst2 Mie 750 fecous7 [pws ae Mutioior Amp [a6 he o aos comin [20min [rosea | Te 136574 Mie, TW fecaza00 | NPN-Si HV Horie Output Sw, [1500 i700 6 ls 128 ly s frose | ta ty=7 psec typ |ro-210| [ecazao1 | NPWS: HV Horie Output Sw, [1500 50 ® Is 700 le fs rose | rae y= A see typ ro-218| eoazaea [WPS Hoe OupeiDemper [i800 [soo 7 5 120 ls jamin [Tors | Ta87 ode, 7 wsec max [ecazaea | NPWS, Hori Output, Sw, 500 750 . 26 e le a froze | Yar t¢= 65 vse typ eeazae NPS WSoeedSw Amo, 0 ie hs “Jeo Fro min roars | Ta8-+ tEompto e231) fecazs0s | NPN-Si, Pwr Amp. Sw. 60 160 7 he 125 fimin—[eomin [roar | ras = 12 psec typ ro-218)| (Gompl to €eS2906) fecazs06 | PNP-Si, Pwr Amp, Sw eo 160 7 he 135 fimin— [eomin [roar | rae 12 vene typ jrro-218) ibomor'o eceea0=) Jeoczae7 | urns HiGein Am, 00 20 5 je 20 ~ 500 min [rosea | Tae lecaza0e | NPW-Si, WiSpeed Sw, Series [500 }400 7 2 100 20 fismin [re-ses | Tae Poss y= see max fecaasce —|NPw=Si HV Wi Speed Sm [ooo 00 7 Te ioe Romin [roars | Tae y= Tonee moe fecaaat0 [NPWS WW Wi Speoa'Sw [i000 aso fe 1 = fomin [roar [Tae fy=-Busee max froze) Notes: * MP. Matehad Pir Package Otis - Soe 1 Frequancy a whlch common enter cyan e 70.0% of ow runs gin ‘Wan atematepatager are shown tindcstes a change in progres hough only ne package i shuslee pacage ey oe encaurered inthe fi 1-50Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) Tomncor | coteam | bw | ex | aim | Few Pecans Seaare | twemine | Enter | catecor | ents | "in* | cane Description and ore” | “vor” | “Vons’ | “Comene | sit | atte | “dan Fe reat “Koc svono | eveto | evtno | tae | ‘wee? | "n' | See | cae | fe fRcGzaNY | NPSL HV i Spowa Sw, fiooo as 7 fs |e io ffose pra rumen i= See WD ro-2) fecaaata | NPRSi HV Hi Speed Sw, foo ]ao0 7 fa Jarin [min fra. | Tar fin? waco eoa23ia | WPN-s, VA Spenasw, ——fiooo [aso =p fa [20we |sowp froaao [Ta fim Ace feccaata PNP Wi speeg Sw, lo. ope fa fico rin Foe Pa aoe ttomtte eeBa00 NPN Dotington woamper [ooo [209 . i( eo Foomin [roan | ra Drove, iv Speca Sw, te 2owee tye [ecGzat6 | NPWSI Owringion Diver wr faa ]aso =o fos ‘oo min [roar [va Damper lode HW Par Amp one) fecazat7 | wPw si owrtington over wi fooo [aso = fe free fein frose ra empe lodss HH Carre froze carve |NPwsi wv, Hor Opa foo ces) [700 ° fe af sw rose [ra Damper ode rote i= Tee fecazaie [rw wv. Spees sm losovcesy [aso sss arn roa Caron = 2 pane p anne [NPRIPNPS:, Gund Dscete [eo Fy mee i Tana [aso [00min [crn | Tee {orp Pin Sw Toy = 90, tot! oi Soret age ney eccaazi | WPNS: Quad Gen Pvp Amos [eo fo = ts zuma [oso [rcomin furrn | too Swiogzt ns 13to be to me eccaaz2 | PAP Si Quad Gon Pp An, eo fo = |s Sunn faso —frw0mn fern | Toe Brigg eine ttm bi tS ney Eo [NPS GRgHTyp One (roo [200 ee enn oo oo iain [To R tro or cana [WvSiW Sw, Hono —fisoo— Yaoo ef 0 jamin roars [rans freaitec mex fecanaas [NPWS Hv A Spena'Sm, ooo [ano 7B so fis Fromm roan [va tye 7 mee yp fscazane [Pw St Oorngtn Damper [189 ro 7 Te fa amin [TOaz0r | Tans Dive: Sry ye amar, fpr Hispeee sw, [iooo [aso ies pe —fa0 [sop —fros6 | ras ee fecazane | WINS HV AF Por Amp [200] 00 =e fie fo Jasin roan re (Complto e662329) fecores NPs. nv AF Pwr Ame (200 [ooo ffs [ro fo Jasmin [roam [rae (Complto eo623%6) feccasae | wens, wi cain amo, less oso fsa 0 feo min [roars | rae egustor ne Zones Cout | ag ‘5 [ecazsay [Noni Hore Sw win [i800] sls a amin froapw | Tas Dempar Diode, aaa | WPS Darron wane faeio fo 2 eisai roe ar [ei aor Ore Sate ime coma [urs wv wi Sposa Sm fio00 [aso ee co fe frome [rm v8 yee max fecazana [nent Dotogin wane [ooze ooze Je fs aaa roma ar Dlose,it 2oner Cn Ove Bayt poet Notas! * MP. Matched Pair 2 Freqoney at which common emir erent is 72.0% ow frequency gen ‘Who strat packages se show lt incataso change in propane, Atnough only one package is avalible, both package willbe shown a lng a the soot package may be ercountored inthe ela Package Outlines - See Pape 1.81 1-51Transistors (cont'd) (Maximum Ratings at T, = 25°C Unless Otherwise Noted) Resistor (10K), Sw, Driver iCampl vo EcG2335), a eg a Pacts “see | toemmae | emer | catecor | ove | ie’ | curent Description and wots” | "vor | “von” | ‘Goren | our | atte | “Guin Fe oa Type “ateton 8¥cs0_| Veco | Bes | teams | woes |“ tee | cme | No roazass (NPWS: Dartington, int jaozis Jeorw |e [5 a0 r= fakin [FO3PI Zener Cnet ecazae[WNPwS: Davington wamper |so=10 |eost0 7 [a as = fk min [TO-2209 Dede, int Zaner Cnt, rer Satya ee fecaase7—[NPN-Si HW, Hi Speed Sw, fooo soo ar ao = le froazan | ra ‘see max lecazase [NPN Daringion wiOsmper [eoa10 feosto [a {2 70 fakin |Tonae | Tas Biede nt-Zaner Crt Dvr Suc tyt vsee esse |Nmvst iw HisoeeaSm, [roca [aoe Fale ja = je froma fra teens max fecazs40 | NPN: Deringion wOsmeer |eoz10 feoz10 [7 ‘(a cs = fakin [To-zen | Tas Diode, nt Zener Cnt, Drv Swcty= Te0e fecazsar | RPN-SI, Donington, Orver [90 feorcen fs Yr a akmin rosa | Tie Ser toy = 15 pee (Compl to E2342) feca2s<2 | NPN-Si, Darington,Orver [0 force st a fakmin [rose |e Swe tor = bac (Compt Eogzsen eesene | NPsi Catingion Pram, [120 20 ls fo has s fkmin [rozo [Ta 6 yee ye onto ebezats ecaza [pwr tnatn Pera, 20 20 is fo rs = fk min [roaee | tar 5 psec YP Congfoeedasea [eca245 | NPN, Dartington PwrAme [120 20 is |e eo = fisomin [sorea | ra52 Sm toy = 5 wes tye Icom i ebz346) Feces Lowe si oetaaeaperane [0 Es is |e eo 3 760 min [sores | 1452 DISC Hi tet Bop) a Soe 20 eo ee Ff so faomin |TO39 | Te =-3 pee fecaaaee | NPNSL WW, Hi Curent, soo 00 7 fre 1 ‘ie jamin roars | Tae teavace yp [eca2a09 | NPN, Oerngton, hao Fae sf Fao = coo min|ro-3 | T2641 Curent: Gen Purp Ame {Compl to €c2380) feeaaaso [PnP Si, Daington, Hi rs rs is fe fa —*- fcoo min}ros | 726 Curent. Gen Purp Amp compl to EcG2340) feca2as1 | NPN-Si,Darington, Pwr Amp, [100 eo se ie = fikmin_|ro-zen| Tass Sw. = 06 yeasty Caml wo €cG238 fecazss2 | PRPS: Datingon, Pwr Amp, [100 eo ale hs = fmm [ro-taen| Ta5's Si y= 04 psec typ compl occa ecazsss [NPN tore Sw wowmoer [isco [aoe «fo 70 - lamin [roam | Ta88 ia, vaee mee fecazaca | NPN, For Ow. WW, Sw, frac‘ ofa eo sx fsmin [roars | Tae yz poe max fecazass [PN Oigial wee Ey fs wo [x00 [00 fas Favmin fora | 92 Reaatr (18K, Sw, Devoe (Compl to €c62386) fecazase | NPS: Digital ware so i yo [reo [00 [aso [00min [oran | rr92 Note: + Me ated Pai {Frequency ch common emir cirnt it 70.0% of ow tequency ain ‘ion aternatepackogr are shown indestes a change in progress Atough only one package ctsletepeckge may be encountered nthe fi 1-52 alia, both pacapes willbe Pactage Outen -See Page 1.91 own at ong a8 heTransistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) wae] |e | Poe Paste Emer | catuctor | cove | "in® | current exciton and Vos. | ‘Curent | Os? | mie | “Gain Fa Fes Type “aopieston ¥en | tcamee | ‘wore | “a | tre | case | Ne fecazasr —[NPNSi, Digna wise cy co 7@ 100 ['a00 iso [so min farsa | 2 Resistor (226), Sw, Dever [Compl to €c6235e) [ecazase | PNP-i Digital witace so eo vo [00 [ao faso _|somin [amen | ria Resistor (28), Sw, Driver [Compl 19 €c62397), fecazase [NPN Digital waco so so wo [100 [00 feo‘ [osmin [spor | risa Resistor WK, Sm, Over [Compl vo €cG2360), fecaas60 | PNP-i, Digi! wae so ey wo [100 [a00 _fos0 —‘[esmin [spor | rra2 Resistor (PR), Sw, rive (Comp wo eCG2359) fecazset NPWS: Gon Purp Amp, Sw, [00 so 5 5 a jzoo 200% fsrs2 | ris =o. psec 9. Goi to €c62362) fecaza62 [PNP-Si,Gon Purp Amp, Sw. [60 so G 5 zs jzoo 200. |srsa | rio oa Jecozaes so se seas 1 so fao0min fro-sam | Tre ecaasee eo so is fe 7 fso_|200min fro-sam | Tie [Compl wo ecez363) feccas6s | NPNsi Hone ou wv. Sw fiso0 [ooo lee a femmin [rose | vee2 f=? pee mow fecazaee [PNP Si video Out Hors ox fa00 00 5 7 2 [so R00 min [rae | 720 {compl to 60399), fecazse7 | NPNsi Oigiat witesisor (50 so sft 3 00‘ faomin |sr-oe | rise fa. 70, SW: Deve [Compt ro EcG2368) fecazaee | PNP.si Datel wmesisor (50 = G a 3 joo faomin [spo2 | tis f47, Se Drv icompt to ECGz367) Jeceases |rPw si grat wtesistor so Ey é a 3 Joo |somin spo | ria are, Sw, Dvr icomph to ECG2370) azz Dope nese so a . 7 a jo |aomin [sven | tia (Comp EOt2369) feca2sar | PNP.Si AF Amp, Os, Mixer, [20 50 je |asma [200 fesown [— — [soras | ta04 fecaaeaa [Pwi toNoise, unewne [20 hs 2 sma [200 |eGre |aomn [sorza | va04 Jamo. Gpe 15 dB ye comer oecs2008) feccases | PNP-Si, Lo Noize, UNEIVHE [20 hs 2 fasma [20 [same [20mm |sorae | rao Amp. Gpe 1838 ve {Compt eca2002 Jeccoeoe lao bo v0 [200 [aso fo [akin [sores | va04 feceauas —[PwP.si,Osrtington. Gon Pure (a0 30 we [a0 [aso 20 [amin [sora | To204| Amp, Preamp, Driver (Compl to €CG2404)| zl fecczses [Pw si, armeAmp, Orver, [78 lao 5 ao [as ooo 10min |sorae | r2oa Sect 60 name comp ws ece2a07) Noes: + MP. latch Pie, { Frequncy a whch common enter eurets70.0% of low requney gain ‘wnenaltrate packages te shown inane» change in progress: Aknough only one package ‘shasta packoge moy bo encounteradn the ele vale, both package willbe shown a ong a the 1-53Transistors (cont'd) (maximum Ratings at T, = 25°C Unless Otherwise Noted) Goleaor | colecor | Guew] mmx | Max | Fea “essen | Totmiar | Emicar |
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