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    SavantIC Semiconductor

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    melecio123
    This document provides the product specification for the SavantIC Semiconductor 2SB1366 silicon PNP power transistor. The transistor has a TO-220F package and is intended for general purpose applications with a low collector saturation voltage of -1.0V max and collector power dissipation of 25W. Key electrical characteristics and parameters are provided including breakdown voltage, current gain, switching times and more. Dimensional outlines for the TO-220F package are also included.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    SavantIC Semiconductor

    Uploaded by

    melecio123
    921 views4 pages
    This document provides the product specification for the SavantIC Semiconductor 2SB1366 silicon PNP power transistor. The transistor has a TO-220F package and is intended for general purpose applications with a low collector saturation voltage of -1.0V max and collector power dissipation of 25W. Key electrical characteristics and parameters are provided including breakdown voltage, current gain, switching times and more. Dimensional outlines for the TO-220F package are also included.

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    This document provides the product specification for the SavantIC Semiconductor 2SB1366 silicon PNP power transistor. The transistor has a TO-220F package and is intended for general purpose applications with a low collector saturation voltage of -1.0V max and collector power dissipation of 25W. Key electrical characteristics and parameters are provided including breakdown voltage, current gain, switching times and more. Dimensional outlines for the TO-220F package are also included.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    921 views4 pages

    SavantIC Semiconductor

    Uploaded by

    melecio123
    This document provides the product specification for the SavantIC Semiconductor 2SB1366 silicon PNP power transistor. The transistor has a TO-220F package and is intended for general purpose applications with a low collector saturation voltage of -1.0V max and collector power dissipation of 25W. Key electrical characteristics and parameters are provided including breakdown voltage, current gain, switching times and more. Dimensional outlines for the TO-220F package are also included.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1366

    DESCRIPTION
    ·With TO-220F package
    ·Complement to type 2SD2058
    ·Low collector saturation voltage:
    VCE(SAT)=-1.0V(Max) at IC=-2A,IB=-0.2A
    ·Collector power dissipation:
    PC=25W(TC=25 )

    APPLICATIONS
    ·With general purpose applications

    PINNING

    PIN DESCRIPTION

    1 Emitter

    2 Collector
    Fig.1 simplified outline (TO-220F) and symbol
    3 Base

    Absolute maximum ratings (Ta=25 )


    SYMBOL PARAMETER CONDITIONS VALUE UNIT

    VCBO Collector-base voltage Open emitter -60 V

    VCEO Collector-emitter voltage Open base -60 V

    VEBO Emitter-base voltage Open collector -7 V

    IC Collector current -3 A

    IB Base current -0.5 A

    Ta=25 2.0
    PC Collector dissipation W
    TC=25 25

    Tj Junction temperature 150

    Tstg Storage temperature -55~150


    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1366

    CHARACTERISTICS
    Tj=25 unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -60 V

    VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.0 V

    VBE Base-emitter on voltage IC=-0.5A;VCE=-5V -1.0 V

    ICBO Collector cut-off current VCB=-60V; IE=0 -0.1 mA

    IEBO Emitter cut-off current VEB=-7V; IC=0 -0.1 mA

    hFE-1 DC current gain IC=-0.5A ; VCE=-5V 60 200

    hFE-2 DC current gain IC=-3A ; VCE=-5V 20

    fT Transition frequency IC=-0.5A ; VCE=-5V 9.0 MHz

    COB Collector output capacitance f=1MHz;VCB=-10V 150 pF

    Switching times

    ton Turn-on time 0.4 µs

    IC=-2.0A IB1=-IB2=-0.2A
    ts Storage time 1.7 µs
    VCC=-30V ,RL=15D

    tf Fall time 0.5 µs

    hFE-1 Classifications

    O Y

    60-120 100-200

    2
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1366

    PACKAGE OUTLINE

    Fig.2 Outline dimensions

    3
    SavantIC Semiconductor Product Specification

    Silicon PNP Power Transistors 2SB1366

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