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Assignment-1 Electronics Engineering (Nec-101)

This document contains two assignments related to electronics engineering. Assignment 1 includes questions about the doping of transistor emitter and base regions, carrier movement in the transistor base, forming an npn transistor from diodes, identifying transistor terminal voltages and currents, why transistors are called bipolar devices, and the origin of the term "transistor." Assignment 2 includes calculations for voltage and current in a common emitter transistor circuit, peak, average, and RMS currents in a full-wave rectifier, calculations for a half-wave rectifier, a diagram of minority and majority carrier currents in a p-n junction, and explanations of zener and avalanche breakdown and the effect of increasing temperature on extrinsic semiconductors.

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Sandeep Kr Arya
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19 views

Assignment-1 Electronics Engineering (Nec-101)

This document contains two assignments related to electronics engineering. Assignment 1 includes questions about the doping of transistor emitter and base regions, carrier movement in the transistor base, forming an npn transistor from diodes, identifying transistor terminal voltages and currents, why transistors are called bipolar devices, and the origin of the term "transistor." Assignment 2 includes calculations for voltage and current in a common emitter transistor circuit, peak, average, and RMS currents in a full-wave rectifier, calculations for a half-wave rectifier, a diagram of minority and majority carrier currents in a p-n junction, and explanations of zener and avalanche breakdown and the effect of increasing temperature on extrinsic semiconductors.

Uploaded by

Sandeep Kr Arya
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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ASSIGNMENT-1

ELECTRONICS ENGINEERING (NEC-101)


1. The doping of the emitter region of a transistor is
(i) Greater than,
(ii) Equal to
(iii) Less than that of the base region.

2. The carriers injected into the base from the emitter move through the base region
by (i) drift, (ii) diffusion.

3. The metal lead of the p-side of a p-n diode is soldered to the metal lead of the pside of another p-n diode. Will the structure form an n-p-n transistor? If not, why?

4. Indicate the reference current directions and voltage polarities of transistor. Give
the signs of the actual current directions and voltage polarities for an np-n and a p
n-p transistor operating normally.

5.Why are junction transistors called bipolar devices?

6. Discuss the mechanism of amplification obtained in a transistor. What is the


origin of the name transistor?

ASSIGNMENT-2
ELECTRONICS ENGINEERING (NEC-101)
1. A transistor is operating in the CE mode. Calculate VCE if =125, assuming
VBE=0.6V, and Ico<<Ic

2. The load resistance of a centre tapped full wave rectifier is 500 and the
necessary voltage (end to end) is 60sin (100t). Calculate a) peak, average and rms
values of current. b) Ripple factor c) efficiency of the rectifier, assume diode
forward resistance RF=50 .

3. A half-wave rectifier use a diode with diode forward resistance of RF=100 if


the i/p ac voltage is220V (rms) and the load resistance is of 2k determine
a) Peak, average and rms values of current.
b) Ripple factor
c) Efficiency of the rectifier

4. Plot the minority and majority carrier current components in a p-n junction
diode as a function of distance from the junction.

5. Describe the physical mechanism of zener and avalanche break down. Explain
the difference between the two.

6. What is the effect of increasing temperature in extrinsic semiconductor?

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