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BTA06 B/C BTB06 B/C: Standard Triacs

The document provides specifications for BTA06 B/C and BTB06 B/C triac families. These are high performance glass passivated PNPN devices suitable for applications requiring high surge current capability such as phase control and static switching of inductive or resistive loads. Key specifications include maximum RMS and surge currents, repetitive off-state voltages, thermal characteristics, and electrical gate trigger values.

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Krista Tran
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105 views5 pages

BTA06 B/C BTB06 B/C: Standard Triacs

The document provides specifications for BTA06 B/C and BTB06 B/C triac families. These are high performance glass passivated PNPN devices suitable for applications requiring high surge current capability such as phase control and static switching of inductive or resistive loads. Key specifications include maximum RMS and surge currents, repetitive off-state voltages, thermal characteristics, and electrical gate trigger values.

Uploaded by

Krista Tran
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BTA06 B/C

BTB06 B/C
STANDARD TRIACS

..
.

FEATURES
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 5 V/s
BTA Family :
INSULATING VOLTAGE= 2500V(RMS)
(UL RECOGNIZED : E81734)

DESCRIPTION
A1
A2

The BTA/BTB06 B/C triac family are high performance glass passivated PNPN devices.
These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and
static switching on inductive or resistive load.

TO220AB
(Plastic)

ABSOLUTE RATINGS (limiting values)


Symbol
IT(RMS)

ITSM

I2t
dI/dt

Tstg
Tj
Tl

Symbol

VDRM
VRRM

March 1995

Parameter

Value

Unit

tp = 8.3 ms

63

tp = 10 ms

60

I2t value

tp = 10 ms

18

A2s

Critical rate of rise of on-state current


Gate supply : IG = 500mA diG/dt = 1A/s

Repetitive
F = 50 Hz

10

A/s

Non
Repetitive

50

RMS on-state current


(360 conduction angle)

BTA

Tc = 100 C

BTB

Tc = 105 C

Non repetitive surge peak on-state current


( Tj initial = 25C )

Storage and operating junction temperature range

- 40 to + 150
- 40 to + 125

C
C

260

Maximum lead temperature for soldering during 10 s at 4.5 mm


from case
Parameter

Repetitive peak off-state voltage


Tj = 125 C

BTA / BTB06-... B/C

Unit

400

600

700

800

400

600

700

800

1/5

BTA06 B/C / BTB06 B/C


THERMAL RESISTANCES
Symbol
Rth (j-a)

Parameter

Value

Unit

60

C/W

BTA

4.4

C/W

BTB

3.2

BTA

3.3

BTB

2.4

Junction to ambient

Rth (j-c) DC Junction to case for DC

Rth (j-c) AC Junction to case for 360 conduction angle


( F= 50 Hz)

C/W

GATE CHARACTERISTICS (maximum values)


PG (AV) = 1W

PGM = 10W (tp = 20 s)

IGM = 4A (tp = 20 s)

VGM = 16V (tp = 20 s).

ELECTRICAL CHARACTERISTICS
Symbol

IGT

Test Conditions

VD=12V

(DC)

(DC)

RL =33

RL =33

Quadrant

Tj=25C

Suffix
B

I-II-III

MAX

50

25

IV

MAX

100

50

mA

Tj=25C

I-II-III-IV

MAX

1.5

VGT

VD=12V

VGD

VD=VDRM R L=3.3k

Tj=110C

I-II-III-IV

MIN

0.2

tgt

VD=VDRM IG = 500mA
dIG/dt = 3A/s

Tj=25C

I-II-III-IV

TYP

IL

IG=1.2 IGT

Tj=25C

I-III-IV

TYP

II

40

20

70

35

50

25

mA

IH *

IT= 500mA gate open

Tj=25C

MAX

VTM *

ITM= 8.5A tp= 380s

Tj=25C

MAX

1.65

IDRM
IRRM

VDRM
VRRM

Tj=25C

MAX

0.01

mA

Tj=110C

MAX

0.5

Linear slope up to VD =67%VDRM


gate open

Tj=110C

MIN

250

100

V/s

(dI/dt)c = 2.7A/ms

Tj=110C

MIN

10

V/s

dV/dt *

(dV/dt)c *

Rated
Rated

* For either polarity of electrode A2 voltage with reference to electrode A1.

2/5

Unit

mA

BTA06 B/C / BTB06 B/C


ORDERING INFORMATION
Package

BTA
(Insulated)

IT(RMS)

VDRM / VRRM

400

600

700

800

400

600

700

800

BTB
(Uninsulated)

Fig.1 : Maximum RMS power dissipation versus RMS


on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)

Sensitivity Specification

Fig.2 : Correlation between maximum RMS power


dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Tcase (o C)

P (W)

P(W)

10

10

180 O

Rth = 0 o C/W
2.5 o C/W
5 o C/W
10 o C/W

= 180

= 120
6

= 90
= 60

= 30

-110

4
-115

Tamb ( C)

0
0

Fig.3 : Correlation between maximum mean power


dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).

10

-100

-105

20

40

60

80

100

120

-125
140

Fig.4 : RMS on-state current versus case temperature.

Tcase (o C)

P (W)

-120

I T(RMS) (A)
0

-100
-105

-95

I T(RMS) (A)

7
6

BTB
BTA

-110
o

Rth = 0 C/W
o
2.5 C/W
5 o C/W
o
10 C/W

-115

4
3
= 180

-120
1

Tamb ( C)

0
0

20

40

Tcase( C)

60

80

100

120

-125
140

0
0

10 20 30 40 50 60 70 80 90 100 110 120 130

3/5

BTA06 B/C / BTB06 B/C


Fig.5 : Relative variation of thermal impedance versus
pulse duration.

Fig.6 : Relative variation of gate trigger current and


holding current versus junction temperature.

Zth/Rth
1

Zt h( j-c)

0.1

Zt h(j-a)

tp( s)

0.01
1E-3

1E-2

1E-1

1E +0

1 E +1

1 E +2 5 E +2

Fig.7 : Non Repetitive surge peak on-state current


versus number of cycles.

Fig.9 : On-state characteristics (maximum values).

4/5

Fig.8 : Non repetitive surge peak on-state current for a


sinusoidal pulse with width : t 10ms, and
corresponding value of I2t.

BTA06 B/C / BTB06 B/C


PACKAGE MECHANICAL DATA
TO220AB Plastic
REF.
H

A
J

G
I
D
B

F
O

M
= N =

A
B
C
D
F
G
H
I
J
L
M
N
O
P

DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
10.20
10.50
0.401
0.413
14.23
15.87
0.560
0.625
12.70
14.70
0.500
0.579
5.85
6.85
0.230
0.270
4.50
0.178
2.54
3.00
0.100
0.119
4.48
4.82
0.176
0.190
3.55
4.00
0.140
0.158
1.15
1.39
0.045
0.055
0.35
0.65
0.013
0.026
2.10
2.70
0.082
0.107
4.58
5.58
0.18
0.22
0.80
1.20
0.031
0.048
0.64
0.96
0.025
0.038

Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.


SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

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