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ECE3040 Homework3 Solution

This document contains the solutions to homework problems from a microelectronic circuits course. It addresses 4 problems from the textbook: 1) Problem 3.6 parts a-d regarding diode characteristics and calculations. 2) Problem 3.12 parts a-f involving graphing diode characteristics. 3) Problem 3.20 involving additional diode calculations. 4) Problem 5.4 parts a-e concerning a PN junction, calculating depletion widths, electric fields, and potential. It provides the answers, calculations, and sketches requested in each problem.

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239 views4 pages

ECE3040 Homework3 Solution

This document contains the solutions to homework problems from a microelectronic circuits course. It addresses 4 problems from the textbook: 1) Problem 3.6 parts a-d regarding diode characteristics and calculations. 2) Problem 3.12 parts a-f involving graphing diode characteristics. 3) Problem 3.20 involving additional diode calculations. 4) Problem 5.4 parts a-e concerning a PN junction, calculating depletion widths, electric fields, and potential. It provides the answers, calculations, and sketches requested in each problem.

Uploaded by

mehtajay1993
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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GEORGIA INSTITUTE OF TECHNOLOGY

SCHOOL OF ELECTRICAL AND COMPUTER ENGINEERING


ECE 3040C: Microelectronic Circuits
Fall Semester 2011, Homework #3
SOLUTIONS
1.

Pierret, Problem 3.6, parts (a), (b), (c), and (d) (20 points)

ECE 3040B: Homework #3, Solution

September 19, 2011

Page 1 of 4

2.

Pierret, Problem 3.12, parts (a)-(f) for graph P3.12(f) (20 points)

ECE 3040B: Homework #3, Solution

September 19, 2011

Page 2 of 4

3.

Pierret, Problem 3.20 (30 points)

ECE 3040B: Homework #3, Solution

September 19, 2011

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4.

(a)

(b)

Pierret, Problem 5.4 (20 points)

! 2 '1015 1015 $
kT ! N AN D $
Vbi =
ln
= 0.0259 ln #
20
& = 0.614V
q #" n 2i &%
" 10
%

xp =

2K s! 0
ND
V =
q N A (N A + N D ) bi

2 "11.7 " 8.85 "10 #14


1015
0.614
1.6 "10 #19
2 "1015 ( 3"1015 )

= 3.64 "10 #5 = 0.36 m


xn =

2K s! 0
NA
V =
q N D (N A + N D ) bi

2 "11.7 " 8.85 "10 #14 2 "1015


0.614
1.6 "10 #19
1015 ( 3"1015 )

= 7.28 "10 #5 = 0.73 m

W = x n + x p = 1.09 m

(c)

qN D
1.6 "10 #19 "1015
! = K ! xn = 11.7 " 8.85 "10#14 " 0.73"10#4 = 11280 V /cm
s 0

(d)

qN A 2 1.6 !10 "19 ! 2 !1015


"4 2
V=
xp =
"14 ! (0.36 !10 ) = 0.40 V
2K s! 0
11.7 ! 8.85 !10

(e) Sketches of charge distribution, electric field and electrostatic potential are analog to Slide
10 in Chapter 3.1.
5.

Pierret, Problem 6.3 (10 points); remember that you deal with a p+n junction, i.e. NA >> ND

To first order, the sketches should be essentially identical to Pierret, Fig. 6.1(a)-(c), except
the Fermi level on the p-side is close to or actually in the valence band. The majority carrier
concentration (holes) on the p-side should be visualized as much larger than the majority
carrier concentration (electrons) on the n-side of the junction. Likewise, the minority carrier
concentration on the n-side (holes) is much greater than on the p-side (electrons). As a
result, hole currents are dominating in both forward and reverse bias direction. Finally, the
depletion region extends most in the lower doped region, i.e. the n-type region.

ECE 3040B: Homework #3, Solution

September 19, 2011

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