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    Avalanche Transit Time Devices

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    uma_madurai
    This document describes avalanche transit time devices, specifically IMPATT and TRAPATT diodes. IMPATT diodes were first proposed by Read in 1958 and operate by creating a delay between the voltage and current through avalanche multiplication and carrier transit time. They feature P-N junctions and high reverse bias fields. Read diodes specifically use avalanche multiplication in the P region with the intrinsic region acting as the drift space. TRAPATT diodes are derived from IMPATT diodes and can achieve higher current densities through trapped plasma effects.

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    Avalanche Transit Time Devices

    Uploaded by

    uma_madurai
    152 views13 pages
    This document describes avalanche transit time devices, specifically IMPATT and TRAPATT diodes. IMPATT diodes were first proposed by Read in 1958 and operate by creating a delay between the voltage and current through avalanche multiplication and carrier transit time. They feature P-N junctions and high reverse bias fields. Read diodes specifically use avalanche multiplication in the P region with the intrinsic region acting as the drift space. TRAPATT diodes are derived from IMPATT diodes and can achieve higher current densities through trapped plasma effects.

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    This document describes avalanche transit time devices, specifically IMPATT and TRAPATT diodes. IMPATT diodes were first proposed by Read in 1958 and operate by creating a delay between the voltage and current through avalanche multiplication and carrier transit time. They feature P-N junctions and high reverse bias fields. Read diodes specifically use avalanche multiplication in the P region with the intrinsic region acting as the drift space. TRAPATT diodes are derived from IMPATT diodes and can achieve higher current densities through trapped plasma effects.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    152 views13 pages

    Avalanche Transit Time Devices

    Uploaded by

    uma_madurai
    This document describes avalanche transit time devices, specifically IMPATT and TRAPATT diodes. IMPATT diodes were first proposed by Read in 1958 and operate by creating a delay between the voltage and current through avalanche multiplication and carrier transit time. They feature P-N junctions and high reverse bias fields. Read diodes specifically use avalanche multiplication in the P region with the intrinsic region acting as the drift space. TRAPATT diodes are derived from IMPATT diodes and can achieve higher current densities through trapped plasma effects.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Download as pptx, pdf, or txt
    of 13

    AVALANCHE

    TRANSIT TIME
    DEVICES
    Proposed by Read in 1958

    PRINCIPLE OF OPERATION

    Negative resistance is achieved by creating a


    delay (1800 Phase shift) between the voltage
    and current.
    Delay is achieved by,
    Delay

    in generating the avalanche current


    multiplication
    Delay due to transit time through the material

    So called Avalanche transit time (ATT) devices


    Avalanche is generated by Carrier impact
    ionization
    TT is due to the drift in the high field domain

    FEATURES

    Presence of P-N junctions


    Diode is reverse biased
    High field (potential gradient) is applied of
    the order 400 KV/cm
    Two modes of ATT
    IMPATT-

    Impact ionization ATT (Efficiency 5-10%)


    TRAPATT- Trapped plasma ATT (Efficiency 20-60%)

    READ DIODE(IMPATT)

    READ
    DIODE
    (IMPATT)

    Read diode is n+ p i p+ diode

    Avalanche multiplication at p region

    Intrinsic region acts as the drift space where


    the generated holes must drift toward p+

    Space between n+ p junction and i p+


    junction is called the space charge region

    The device operation delivers power from


    the dc bias to the oscillation

    Operation:
    Avalanche

    field zone

    multiplication and drift of the high

    Carrier

    current
    I0(t) and External
    current Ie(t)

    IMPATT DIODE

    The physical mechanism is the interaction of


    impact ionization avalanche and the transit
    time of charge carriers.
    So Read-type diodes are also called IMPATT
    diode
    Most simplest IMPATT diodes are the basic
    Read diodes
    Three typical Si IMPATT diodes are shown
    below. Operations are similar to Read diode

    TRAPATT DIODE

    Derived from IMPATT diode


    Presence of P-N junctions
    Diode is reverse biased
    High current densities than normal avalanche
    operation
    It is
    diode.

    Operation:

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