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Calling Function To Check Answers of Exercise 16.3

This MATLAB function calculates key MOSFET parameters (surface potential, depletion width, electric field at surface, and gate voltage) given doping concentration, oxide thickness, and surface potential. It defines constants, determines sign of doping, calculates surface potential, depletion width, electric field at surface, and gate voltage. It is called with sample values and outputs the calculated parameters.

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mehrab_ramzan1194
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42 views

Calling Function To Check Answers of Exercise 16.3

This MATLAB function calculates key MOSFET parameters (surface potential, depletion width, electric field at surface, and gate voltage) given doping concentration, oxide thickness, and surface potential. It defines constants, determines sign of doping, calculates surface potential, depletion width, electric field at surface, and gate voltage. It is called with sample values and outputs the calculated parameters.

Uploaded by

mehrab_ramzan1194
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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function [Phi_F,W,E_s,VG]=Mosfunction(Dop,X0,Phi_S)

q=1.6*10^-19;
KT=0.0259*q;
E0=8.85*10^-14;
ni=10^10;
Ks=11.8;
K0=3.9;
C1=KT/q;
C2=Ks*E0;
C3=q*Dop;
if Dop<0
Signn=-1;
else
Signn=1;
end
Phi_F=Signn*C1*log(abs(Dop)/ni);
E_s=sqrt(((2*C3*Phi_S)/(C2)));
W=sqrt((2*C2*Phi_S)/(C3));
VG=Phi_S+(Ks*X0*E_s)/K0;

Calling function to check answers of exercise 16.3


>> [Phi_F,W,E_s,VG]=Mosfunction(10^15,0.1*10^-4,0.298)

Phi_F =
0.2982 V
W=
6.2370e-005 cm
E_s =
9.5559e+003 V/cm
VG =
0.5871 V

Calling function to check answers of exercise 16.3


>> [Phi_F,W,E_s,VG]=Mosfunction(-10^15,0.1*10^-4,2*-0.298)
Phi_F =
-0.2982 V
W=
8.8205e-005 cm
E_s =
1.3514e+004 V/cm

VG =
-0.1871 V

Problem No 5

-0.2

-0.25

Phi-F(V)

-0.3

-0.35

-0.4

-0.45

-0.5

-0.55
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3

Nd(1/cm )

q=1.6*10^-19;
KT=0.0259*q;
E0=8.85*10^-14;
ni=10^10;
Ks=11.8;
K0=3.9;
Dop=-linspace(10^15,10^19,1000);
C1=KT/q;
C2=Ks*E0;
C3=q*Dop;
if Dop<0
Signn=-1;
else
Signn=1;
end
Phi_F=Signn.*C1.*log(abs(Dop)./ni);
semilogx(abs(Dop),Phi_F)
xlabel('Nd(1/cm^3)');
ylabel('Phi-F(V)')

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10

-1

WT(um)

10

-2

10

-3

10
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10

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10

10
3

Nd(1/cm )

q=1.6*10^-19;
KT=0.0259*q;
E0=8.85*10^-14;
ni=10^10;
Ks=11.8;
K0=3.9;
Dop=-linspace(10^15,10^19,1000);
C1=KT/q;
C2=Ks*E0;
C3=q*Dop;
if Dop<0
Signn=-1;
else
Signn=1;
end
Phi_S=-2*0.298;
W=sqrt((2*C2*Phi_S)./(C3));
W=W*10^-2;
W=W*10^6;
loglog(abs(Dop),W)
xlabel('Nd(1/cm^3)');
ylabel('WT(um)')

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