2N2907A

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

Features

Epitaxial Planar Die Construction

Complementary NPN Type Available 2N2222A

TO92

Ideal for Medium Power Amplification and Switching

MAXIMUM RATINGS
Symbol

Value

Unit

CollectorEmitter Voltage

Rating

VCEO

60

Vdc

CollectorBase Voltage

VCBO

60

Vdc

EmitterBase Voltage

VEBO

5.0

Vdc

Collector Current Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RJA

200

C/W

Thermal Resistance, Junction to Case

RJC

83.3

C/W

Operating and Storage Junction

Temperature Range

1
2

COLLECTOR
1
2
BASE

THERMAL CHARACTERISTICS
Characteristic

3
EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

CollectorEmitter Breakdown Voltage(1)

(IC = 10 mAdc, IB = 0)

V(BR)CEO

40

Vdc

CollectorBase Breakdown Voltage

(IC = 10
Adc, IE = 0)

V(BR)CBO

60

Vdc

EmitterBase Breakdown Voltage

(IE = 10
Adc, IC = 0)

V(BR)EBO

5.0

Vdc

Collector Cut-off Current

(VCE = 50 Vdc, VEB(off) = 0.5 Vdc)

ICEX

50

nAdc

Collector Cut-off Current

(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 150C)

ICBO

0.10
15

Emitter Cut-off Current

(VEB = 3.0 Vdc)

IEBO

100

nAdc

Collector Cut-off Current

(VCE = 35 V)

ICEO

100

nAdc

Base Cut-off Current

(VCE = 30 Vdc, VEB(off) = 0.5 Vdc)

IBEX

50

nAdc

OFF CHARACTERISTICS

Adc

1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.

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01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

Page 1 of 5

2N2907A
PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

75
50
100
100
50

300

0.3
1.0

1.3
2.0

fT

200

MHz

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

8.0

pF

Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

30

pF

ton

50

ns

td

10

ns

tr

40

ns

toff

110

ns

ts

80

ns

tf

30

ns

ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)

hFE

CollectorEmitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

BaseEmitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

Vdc

Vdc

SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(1), (2)
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)

SWITCHING CHARACTERISTICS
TurnOn Time
Delay Time

(VCC = 30
30 Vdc,
Vd IC = 150
150 mAdc,
Ad
IB1 = 15 mAdc) (Figures 1 and 5)

Rise Time
TurnOff Time
Storage Time

(VCC = 6.0
6 0 Vdc,
Vd IC = 150
150 mAdc,
Ad
IB1 = IB2 = 15 mAdc) (Figure 2)

Fall Time
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns

-30 V
200
1.0 k

0
50

-16 V

TO OSCILLOSCOPE
RISE TIME 5.0 ns

200 ns

Figure 1. Delay and Rise Time Test Circuit

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01-Jun-2002 Rev. A

INPUT
Zo = 50
PRF = 150 PPS
RISE TIME 2.0 ns
P.W. < 200 ns

+15 V

-6.0 V

1.0 k
1.0 k

0
-30 V

50

37
TO OSCILLOSCOPE
RISE TIME 5.0 ns

1N916

200 ns

Figure 2. Storage and Fall Time Test Circuit

Any changing of specification will not be informed individual

Page 2 of 5

2N2907A
PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

TYPICAL CHARACTERISTICS

hFE , NORMALIZED CURRENT GAIN

3.0

VCE = -1.0 V
VCE = -10 V

2.0

TJ = 125C
25C

1.0
-
55C

0.7
0.5
0.3
0.2
-0.1

-0.2 -0.3

-0.5 -0.7 -1.0

-2.0

-3.0

-5.0 -7.0

-10

-20

-30

-50 -70 -100

-200 -300 -500

IC, COLLECTOR CURRENT (mA)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 3. DC Current Gain

-1.0
-0.8

IC = -1.0 mA

-10 mA

-100 mA

-500 mA

-0.6

-0.4
-0.2
0
-0.005

-0.01

-0.02 -0.03 -0.05 -0.07 -0.1

-0.2

-0.3 -0.5 -0.7 -1.0

IB, BASE CURRENT (mA)

-2.0

-3.0

-20 -30

-5.0 -7.0 -10

-50

Figure 4. Collector Saturation Region

500
tr

100
70
50
30
20
10

300

VCC = -30 V
IC/IB = 10
TJ = 25C

200

t, TIME (ns)

t, TIME (ns)

300
200

td @ VBE(off) = 0 V

7.0
5.0
3.0
-5.0 -7.0 -10

Figure 5. TurnOn Time

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01-Jun-2002 Rev. A

tf

100
70
50
30

ts = ts - 1/8 tf

20
2.0 V

-20 -30
-50 -70 -100
IC, COLLECTOR CURRENT

VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25C

-200 -300 -500

10
7.0
5.0
-5.0 -7.0 -10

-20 -30
-50 -70 -100
-200 -300 -500
IC, COLLECTOR CURRENT (mA)

Figure 6. TurnOff Time

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Page 3 of 5

2N2907A
PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

10

10

8.0

8.0
NF, NOISE FIGURE (dB)

IC = -1.0 mA, Rs = 430

-500 A, Rs = 560
-50 A, Rs = 2.7 k
-100 A, Rs = 1.6 k

6.0
4.0

Rs = OPTIMUM SOURCE RESISTANCE

2.0
0
0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

50

50

100

200

500 1.0 k 2.0 k

5.0 k 10 k

20 k

f, FREQUENCY (kHz)

Rs, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects

Figure 8. Source Resistance Effects

20
C, CAPACITANCE (pF)

IC = -50 A
-100 A
-500 A
-1.0 mA

4.0

100

30
Ceb

10
7.0
5.0

Ccb

3.0
2.0
-0.1

6.0

2.0

-0.2 -0.3 -0.5

-1.0

-2.0 -3.0 -5.0

-10

-20
-30

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

NF, NOISE FIGURE (dB)

f = 1.0 kHz

50 k

400
300
200

100
80

VCE = -20 V
TJ = 25C

60
40
30
20
-1.0 -2.0

-5.0

-10

-20

-50

-100 -200

-500 -1000

REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances

Figure 10. CurrentGain Bandwidth Product

+0.5

-1.0

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/ C)

TJ = 25C
-0.8

VBE(on) @ VCE = -10 V

-0.6
-0.4
-0.2

-0.5 -1.0 -2.0 -5.0 -10 -20

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01-Jun-2002 Rev. A

-0.5
-1.0
-1.5
RVB for VBE

-2.0

VCE(sat) @ IC/IB = 10
0
-0.1 -0.2

RVC for VCE(sat)

-50 -100 -200

-500

-2.5
-0.1 -0.2 -0.5 -1.0 -2.0

-5.0 -10 -20

-50 -100 -200 -500

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 11. On Voltage

Figure 12. Temperature Coefficients

Any changing of specification will not be informed individual

Page 4 of 5

2N2907A
PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

TO-92 PACKAGE OUTLINE DIMENSIONS

Symbol
A
A1
b
c
D
D1
E
e
e1
L

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01-Jun-2002 Rev. A

Dimensions In Millimeters
Min
Max
3.300
3.700
1.100
1.400
0.380
0.550
0.360
0.510
4.400
4.700
3.430
4.300
4.700
1.270TYP
2.440
2.640
14.100
14.500
1.600
0.000
0.380

Dimensions In Inches
Min
Max
0.130
0.146
0.043
0.055
0.015
0.022
0.014
0.020
0.173
0.185
0.135
0.169
0.185
0.050TYP
0.096
0.104
0.555
0.571
0.063
0.000
0.015

Any changing of specification will not be informed individual

Page 5 of 5