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Questions: Last Updated: June 15, 2014

The document discusses semiconductor devices and provides two questions about them. The first question asks why the drain current increases linearly with VGS - VT rather than quadratically in the saturation region of a semiconductor device when the velocity saturates. The second question does not provide any additional details.

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amiglani
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38 views3 pages

Questions: Last Updated: June 15, 2014

The document discusses semiconductor devices and provides two questions about them. The first question asks why the drain current increases linearly with VGS - VT rather than quadratically in the saturation region of a semiconductor device when the velocity saturates. The second question does not provide any additional details.

Uploaded by

amiglani
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Questions

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Last Updated: June 15, 2014

Contents
1 Semiconductor Devices

Chapter 1

Semiconductor Devices
1. Drain current increases linearly with VGS VT rather than quadratically in the saturation region.
Why it varies linearly when velocity saturates?

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