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PNP Silicon AF Transistors: V V V I I I I P T T

This document is a datasheet for the BCX 69 PNP silicon AF transistors. It provides specifications for the transistor such as electrical characteristics including current gain, saturation voltage, and frequency response. It also lists maximum ratings for voltage, current, power and temperature. Graphs illustrate characteristics like gain, saturation voltage and cutoff current as functions of collector current, voltage, and temperature. The datasheet specifies the transistor is for general AF applications and is available in different packages and current ratings.

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46 views5 pages

PNP Silicon AF Transistors: V V V I I I I P T T

This document is a datasheet for the BCX 69 PNP silicon AF transistors. It provides specifications for the transistor such as electrical characteristics including current gain, saturation voltage, and frequency response. It also lists maximum ratings for voltage, current, power and temperature. Graphs illustrate characteristics like gain, saturation voltage and cutoff current as functions of collector current, voltage, and temperature. The datasheet specifies the transistor is for general AF applications and is available in different packages and current ratings.

Uploaded by

elecompinn
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BCX 69

1 Nov-03-1999
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCX 68 (NPN)
2
1
3
VPS05162
2
Type Marking Pin Configuration Package
BCX 69
BCX 69-10
BCX 69-16
BCX 69-25
CE
CF
CG
CH
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
SOT-89
SOT-89
SOT-89
SOT-89
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage V
CEO
20 V
Collector-base voltage V
CBO
25
Emitter-base voltage V
EBO
5
DC collector current I
C
1 A
Peak collector current I
CM
2
Base current I
B
100 mA
Peak base current I
BM
200
Total power dissipation, T
S
= 130 C P
tot
1 W
Junction temperature T
j
150 C
Storage temperature T
stg
-65 ... 150
Thermal Resistance
Junction ambient
1)
R
thJA
75 K/W
Junction - soldering point R
thJS
20
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
BCX 69
2 Nov-03-1999
Electrical Characteristics at T
A
= 25C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage
I
C
= 30 mA, I
B
= 0
V
(BR)CEO
20 - - V
Collector-base breakdown voltage
I
C
= 10 A, I
B
= 0
V
(BR)CBO
25 - -
Emitter-base breakdown voltage
I
E
= 1 A, I
C
= 0
V
(BR)EBO
5 - -
Collector cutoff current
V
CB
= 25 V, I
E
= 0
I
CBO
- - 100 nA
Collector cutoff current
V
CB
= 25 V, I
E
= 0 , T
A
= 150 C
I
CBO
- - 100 A
DC current gain 1)
I
C
= 5 mA, V
CE
= 10 V
h
FE
50 - - -
DC current gain 1)
I
C
= 500 mA, V
CE
= 1 V

BCX 69
BCX 69-10
BCX 69-16
BCX 69-25
h
FE

85
85
100
160

-
100
160
250

375
160
250
375
DC current gain 1)
I
C
= 1 A, V
CE
= 1 V
h
FE
60 - -
Collector-emitter saturation voltage1)
I
C
= 1 A, I
B
= 100 mA
V
CEsat
- - 0.5 V
Base-emitter voltage 1)
I
C
= 5 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 1 V
V
BE(ON)

-
-

0.6
-

-
1
AC Characteristics
Transition frequency
I
C
= 100 mA, V
CE
= 5 V, f = 20 MHz
f
T
- 100 - MHz
1) Pulse test: t 300s, D = 2%
BCX 69
3 Nov-03-1999
Total power dissipation P
tot
= f (T
A
*;T
S
)
* Package mounted on epoxy
0
0.0
EHP00468 BCX 69
150 50 100 C
T
A S
T
0.2
0.4
0.6
0.8
1.0
W
1.2
P
tot
T T ;
A S
Transition frequency f
T
= f (I
C
)
V
CE
= 5V
10 10 10 10
BCX 69 EHP00469
f
mA
MHz
0 1 2 3
5
T
3
10
10
2
1
10
5
5
5
C

Collector cutoff current I


CBO
= f (T
A
)
V
CB
= 25V
10
0 50 100 150
BCX 69 EHP00471
T
A
5
10
10
nA
10

CB0
5
5
5
10
10
5
4
3
2
1
0
max
typ
C
Permissible pulse load
P
totmax
/ P
totDC
= f (t
p
)
10
EHP00470 BCX 69
-6
0
10
5
D =
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
= D
T
t
p
T
tot max
tot
P
DC
P
p
t
BCX 69
4 Nov-03-1999
Collector-emitter saturation voltage
I
C
= f (V
CEsat
), h
FE
= 10
0 0.4 0.8
BCX 69 EHP00473
V
CE sat
V
mA
10
4
1
10
10
10
2
10
10
3
10
5
5
5
10
0
0.2 0.6
100
25
-50
C

C
C
C
Base-emitter saturation voltage
I
C
= f (V
BEsat
), h
FE
= 10
10
0 0.6
BCX 69 EHP00472
V
BE sat
10
mA
10
10
10
4
3
2
1
0
5
5
5
V 0.2 0.4 0.8 1.0 1.2
100
25
-50
C

C
C
C
Collector current I
C
= f (V
BE
)
V
CE
= 1V
10
0 0.6
BCX 69 EHP00474
V
BE
10
mA
10
10
10
4
3
2
1
0
5
5
5
V 0.2 0.4 0.8 1.0 1.2
100
25
-50
C

C
C
C
DC current gain h
FE
= f (I
C
)
V
CE
= 1V
10 10 10 10
BCX 69 EHP00475
h
mA
0 1 3 4
FE
3
10
10
2
0
10
5
5
10
1
2
10
5
100
25
-50
5 5 5
C

C
C
C
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.

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