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EE 331 Devices and Circuits I: (Continue)

This document discusses an EE 331 lecture on waveforms, inverters, and transistor circuits. It asks questions about producing a sinusoidal signal with an inverter-based circuit and why the number of inverters should be odd. It also addresses the behavior and characteristics of NMOS inverter circuits with resistive loads, noting that resistors would take up too much area and cause high static power dissipation in integrated circuits. Alternative transistor-based loads for inverters are mentioned.

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Dũng Gooner
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© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
26 views

EE 331 Devices and Circuits I: (Continue)

This document discusses an EE 331 lecture on waveforms, inverters, and transistor circuits. It asks questions about producing a sinusoidal signal with an inverter-based circuit and why the number of inverters should be odd. It also addresses the behavior and characteristics of NMOS inverter circuits with resistive loads, noting that resistors would take up too much area and cause high static power dissipation in integrated circuits. Alternative transistor-based loads for inverters are mentioned.

Uploaded by

Dũng Gooner
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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EE 331 Devices and circuits I

Lecture 10
(Continue)
Wave form
Quiz
V
O

t
T = 10
p
Inverter-based circuit?
How to produce a sinusoidal
signal with = 2(1/T)?
Why should the number
of inverters be odd?
V
DD
What is the behavior of this circuit?
V
DS
Output characteristics
Load line
I
D
V
DS
= V
GS

V
DS
=
Deeper look
?
?
0.82V
1.42V
V
I
Problem
Problem
1.42V
Triode region
Need to know I
D
to find W/L and how?
R=?
SUMARY
t
simple discrete component logic gate
used to introduce the concepts
associated with static logic gate design
IC realizations do not use resistive loads
NMOS inverter with resistive load:
resistor would take up far too much area.
Static power dissipation
Resistor with a thickness of 1 m in a silicon region with a resistivity of
0.001 .cm.

A 95-k load resistor would require the ratio of L/W to be
Transistor Alternatives to the Load Resistor
Not used
Saturated load inverter
Linear load inverter.

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