0% found this document useful (0 votes)
34 views3 pages

Isc 2SD1555: Isc Silicon NPN Power Transistor

The document provides product specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor model 2SD1555. The transistor has a high breakdown voltage of 1500V, high switching speed, and low saturation voltage. It is designed for use in color TV horizontal output applications. Key specifications include a collector-base voltage of 1500V maximum, collector-emitter saturation voltage below 5V, DC current gain above 8, and fall time below 1 microsecond.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
34 views3 pages

Isc 2SD1555: Isc Silicon NPN Power Transistor

The document provides product specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor model 2SD1555. The transistor has a high breakdown voltage of 1500V, high switching speed, and low saturation voltage. It is designed for use in color TV horizontal output applications. Key specifications include a collector-base voltage of 1500V maximum, collector-emitter saturation voltage below 5V, DC current gain above 8, and fall time below 1 microsecond.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 3

INCHANGE Semiconductor isc Product Specification

isc websitewww.iscsemi.cn
1
isc Silicon NPN Power Transistor 2SD1555



DESCRIPTION
High Breakdown Voltage-
V
CBO
= 1500V (Min)
High Switching Speed
Low Saturation Voltage
Built-in Damper Diode


APPLICATIONS
Designed for color TV horizontal output applications


ABSOLUTE MAXIMUM RATINGS(T
a
=25)
SYMBOL PARAMETER VALUE UNIT
V
CBO


Collector-Base Voltage 1500 V
V
CEO


Collector-Emitter Voltage 600 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current- Continuous 5 A
I
B
Base Current- Continuous 2.5 A
P
C

Collector Power Dissipation
@ T
C
=25
50 W
T
J
Junction Temperature 150
T
stg
Storage Temperature Range -55~150


INCHANGE Semiconductor isc Product Specification
isc websitewww.iscsemi.cn
2
isc Silicon NPN Power Transistor 2SD1555

ELECTRICAL CHARACTERISTICS
T
C
=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO


Emitter-Base Breakdown Voltage I
E
= 200mA ; I
C
= 0 5 V
V
CE(sat)
Collector-Emitter Saturation Voltage I
C
= 4A; I
B
= 0.8A 5.0 V
V
BE(sat)
Base-Emitter Saturation Voltage I
C
= 4A; I
B
= 0.8A 1.5 V
I
CBO
Collector Cutoff Current V
CB
= 500V; I
E
= 0 10 A
h
FE
DC Current Gain I
C
= 1A ; V
CE
= 5V 8
V
ECF
C-E Diode Forward Voltage I
F
= 5A 2.0 V
f
T
Current-GainBandwidth Product I
C
= 0.1A ; V
CE
= 10V 3 MHz
C
OB
Output Capacitance I
E
= 0 ; V
CB
= 10V;f
test
=1.0MHz 165 pF
t
f
Fall Time I
CP
= 4A , I
B1(end)
= 0.8A 0.5 1.0 s

INCHANGE Semiconductor isc Product Specification
3
isc websitewww.iscsemi.cn


isc Silicon NPN Power Transistor 2SD1555

You might also like