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NTE3031 Phototransistor Detector NPN-Si, Visible & IR: Absolute Maximum Ratings: (T

This document provides specifications for an NPN-Si phototransistor detector that is sensitive to visible and infrared light. It lists the absolute maximum ratings for collector-emitter voltage, emitter-collector voltage, continuous device dissipation, operating junction temperature range, and storage temperature range. The electrical characteristics section provides the test conditions and typical/maximum values for parameters like collector dark current, breakdown voltages, saturation voltage, light current, and photo current rise time. Dimensional details of the device are also provided.

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81 views2 pages

NTE3031 Phototransistor Detector NPN-Si, Visible & IR: Absolute Maximum Ratings: (T

This document provides specifications for an NPN-Si phototransistor detector that is sensitive to visible and infrared light. It lists the absolute maximum ratings for collector-emitter voltage, emitter-collector voltage, continuous device dissipation, operating junction temperature range, and storage temperature range. The electrical characteristics section provides the test conditions and typical/maximum values for parameters like collector dark current, breakdown voltages, saturation voltage, light current, and photo current rise time. Dimensional details of the device are also provided.

Uploaded by

ioxero
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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NTE3031

Phototransistor Detector
NPNSi, Visible & IR
Absolute Maximum Ratings: (T
A
= +25C unless otherwise specified)
CollectorEmitter Voltage, V
CEO
30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterCollector Voltage, V
ECO
5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Device Dissipation, P
D
150mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25C 1.43mW/C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
55 to +125C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
65 to +150C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (During Soldering, 3 min), T
L
+260C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Collector Dark Current I
D
V
CE
= 10V 100 nA
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 100A 30 V
EmitterCollector Breakdown Voltage V
(BR)ECO
I
E
= 100A 5 V
Saturation Voltage V
CE(sat)
I
C
= 0.4mA 0.2 V
Optical Characteristics
Light Current I
L
V
CE
= 5V, R
L
= 100, Note 1 1 mA
Photo Current Rise Time t
r
R
L
= 1000, V
CC
= 5V,
I
L
= 1mA (Peak)
6 s
Note 1. Radiation flux density (H) equal to 5mW/cm
2
emitted from a tungsten source at a color
temperature of 2875 K.
Note 2. Angular response is defined as the total included angle between the half sensitivity points
and assuming a point source.
.021
(0.53)
.208
(5.28)
.500
(12.7)
Min
.150 (3.81) Die
Seating Plane
.184 (4.67) Dia
.210 (5.33) Dia
.155 (3.94) Dia
Window on
Center Line
.018 (0.45) Dia Typ
.100 (2.54) Dia
.040 (1.02)
45
Collector Emitter
Base

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