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Data Sheet

The document provides a product specification for the SavantIC Semiconductor BU102 silicon NPN power transistor. Key details include: - It has a TO-3 package and is designed for use in the horizontal deflection output stage of CTV receivers. - Absolute maximum ratings include a collector-emitter sustaining voltage of 150V, collector current of 7A, and junction temperature of 150°C. - Characteristics include a collector-emitter saturation voltage of 2.0V at 5A collector current, DC current gain of 30-120 at 1A collector current, and collector-base breakdown voltage of 400V. - The document also provides the pinning configuration and package outline

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31 views3 pages

Data Sheet

The document provides a product specification for the SavantIC Semiconductor BU102 silicon NPN power transistor. Key details include: - It has a TO-3 package and is designed for use in the horizontal deflection output stage of CTV receivers. - Absolute maximum ratings include a collector-emitter sustaining voltage of 150V, collector current of 7A, and junction temperature of 150°C. - Characteristics include a collector-emitter saturation voltage of 2.0V at 5A collector current, DC current gain of 30-120 at 1A collector current, and collector-base breakdown voltage of 400V. - The document also provides the pinning configuration and package outline

Uploaded by

aurijr
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU102

DESCRIPTION www.datasheet4u.com With TO-3 package VCEO(sus)=150V (min) APPLICATIONS Designed for horizontal deflection output stage of CTV receivers
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

Absolute maximum ratings(Ta= )


SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collectorl power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 400 150 6 7 100 150 -55~150 UNIT V V V A W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
www.datasheet4u.com

BU102

SYMBOL

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=100mA; IB=0

150

V(BR)EBO

Emitter-base breakdown votage

IE=1mA; IC=0

V(BR)CBO

Collector-base breakdown votage

IC=1mA; IE=0

400

VCEsat

Collector-emitter saturation voltage

IC=5 A;IB=1.0 A

2.0

VBEsat

Base-emitter saturation voltage

IC=5 A;IB=1.0 A

2.5

ICBO

Collector cut-off current

VCB=400V; IE=0

0.1

mA

ICEO

Collector cut-off current

VCE=100V; IE=0

1.0

mA

IEBO

Emitter cut-off current

VEB=5V; IC=0

0.1

mA

hFE

DC current gain

IC=1A ; VCE=5V

30

120

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE
www.datasheet4u.com

BU102

Fig.2 Outline dimensions

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