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SUB45N03-13L: Vishay Siliconix

This document summarizes the specifications and characteristics of the SUB45N03-13L N-Channel 30-V MOSFET from Vishay Siliconix. Key specifications include a drain-source breakdown voltage of 30V, on-resistance of 0.013 ohms at 10V gate voltage, and continuous drain current of 45A. The document provides typical performance curves, maximum ratings, thermal characteristics, and packaging information for this MOSFET.

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46 views5 pages

SUB45N03-13L: Vishay Siliconix

This document summarizes the specifications and characteristics of the SUB45N03-13L N-Channel 30-V MOSFET from Vishay Siliconix. Key specifications include a drain-source breakdown voltage of 30V, on-resistance of 0.013 ohms at 10V gate voltage, and continuous drain current of 45A. The document provides typical performance curves, maximum ratings, thermal characteristics, and packaging information for this MOSFET.

Uploaded by

javierrincon800
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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SUB45N03-13L

Vishay Siliconix

N-Channel 30-V (D-S), 175_C MOSFET


FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
30

rDS(on) (W)
0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V

ID (A)
45a 45a

D TrenchFETr Power MOSFETS D 175_C Junction Temperature

TO-263

D S

Top View S SUB45N03-13L N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)


Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C

Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg

Limit
30 "20 45a 34a 100 45 100 88c 3.75 - 55 to 175

Unit
V

mJ W _C

Maximum Power Dissipationb Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS


Parameter
Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1 square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 71740 S-05010Rev. G, 05-Nov-01 www.vishay.com PCB Mountd

Symbol
RthJA RthJC

Limit
40 1.7

Unit
_C/W

SUB45N03-13L
Vishay Siliconix

MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)


Parameter Static
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage g Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 45 A Drain Source On-State Drain-Source On State Resistancea VGS = 10 V, ID = 45 A, TJ = 125_C rDS(on) DS( ) VGS = 10 V, ID = 45 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 45 A 20 45 0.009 0.013 0.02 0.0145 0.013 0.02 0.026 0.02 S W 30 1 3 "100 1 50 150 A mA m V nA

Symbol

Test Condition

Min

Typ

Max

Unit

Dynamicb
Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.33 W ID ] 45 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, , VGS = 10 V, , ID = 45 A VGS = 0 V, VDS = 25 V, f = 1 MHz 2000 370 180 40 7.5 8 11 9 38 11 20 20 70 20 ns 70 nC pF

Gate-Drain Chargec Turn-On Delay Timec Rise Timec

Turn-Off Delay Timec Fall Timec

Source-Drain Diode Ratings and Characteristics (TC = 25_C)b


Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 45 A, , di/dt = 100 A/ms IF = 45 A, VGS = 0 V 1 35 1.7 0.03 45 A 100 1.3 70 V ns A mC

Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. e. Guaranteed by design, not subject to production testing. b. Independent of operating temperature.

www.vishay.com

Document Number: 71740 S-05010Rev. G, 05-Nov-01

SUB45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
120 VGS = 10 thru 6 V 5V 90 I D - Drain Current (A) I D - Drain Current (A) 60 100

Transfer Characteristics

80

60 4V

40 TC = 125_C 20 25_C 0 - 55_C 3 4 5

30 2V 0 0 2 4 6 8 10 3V

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Transconductance
80 TC = - 55_C 60 25_C 125_C 40 r DS(on) - On-Resistance ( W ) 0.04 0.05

On-Resistance vs. Drain Current

g fs - Transconductance (S)

0.03

0.02 VGS = 4.5 V VGS = 10 V 0.01

20

0 0 20 40 60 80

0.00 0 20 40 ID - Drain Current (A) 60 80

VGS - Gate-to-Source Voltage (V)

Capacitance
3000 10

Gate Charge

Ciss

V GS - Gate-to-Source Voltage (V)

2500 C - Capacitance (pF)

VDS = 15 V ID = 45 A

2000

1500

1000 Coss 500 Crss 0 6 12 18 24 30

0 0 10 20 30 40

VDS - Drain-to-Source Voltage (V) Document Number: 71740 S-05010Rev. G, 05-Nov-01

Qg - Total Gate Charge (nC) www.vishay.com

SUB45N03-13L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
100 VGS = 10 V ID = 45 A r DS(on) - On-Resistance (W ) (Normalized) 1.7 I S - Source Current (A) TJ = 150_C TJ = 25_C 10

Source-Drain Diode Forward Voltage

1.3

0.9

0.5 - 50

1 - 25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C)

VSD - Source-to-Drain Voltage (V)

THERMAL RATINGS
Maximum Drain Current vs. Case Temperature
60 200 100 10 ms 100 ms

Safe Operating Area

50 I D - Drain Current (A) I D - Drain Current (A)

Limited by rDS(on)

40

30

10

1 ms

20

10

TC = 25_C Single Pulse

10 ms 100 ms dc

0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

1 0.1 1 10 100

VDS - Drain-to-Source Voltage (V)

Normalized Thermal Transient Impedance, Junction-to-Case

0.2 0.1 0.1 0.05 0.02

Single Pulse 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 3 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71740 S-05010Rev. G, 05-Nov-01

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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