Amplifiers
Amplifiers
through a circuit called "AMPLIFIER. Faithful amplification: Amplification in which shape of the electrical signal remains the same, only the magnitude (voltage, current or power) of the signal increases is called faithful amplification. Transistor amplifier: If the amplification is achieved by using a Bipolar junction transistor and associated biasing circuit, then the amplifier is called transistor amplifier. For faithful amplification, the transistor should always be operated in the linear region (active region) of its output characteristics. Therefore, the biasing circuit should be designed in such a way that during all the instants of the input signal, i) Emitter-Base junction remains under forward bias and ii) Collector-Base junction remains under reverse bias. Amplifiers are classified under various criterias as follows. 1. Based on transistor configuration: a. Common-emitter (CE) amplifier b. Common-base (CB) amplifier c. Common-collector (CC) amplifier 2. Based on the strength of input signal, a. Small-signal amplifier (voltage amplifier) b. Large signal amplifier (power amplifier) 3. Based on biasing conditions, a. Class A amplifiers b. Class B amplifiers c. Class C amplifiers d. Class AB amplifiers 4. Based on frequency response, a. DC amplifier ( from zero frequency) b. Audio frequency amplifiers (20 Hz 20kHz) c. Intermediate frequency amplifiers (IF) d. Radio frequency amplifiers (20kHz to MHz) i) Very high frequency amplifiers (VHF) ii) Ultra high frequency amplifiers (UHF) e. Microwave frequency amplifiers ( wF) 5. Based on the bandwidth, a. Narrow band amplifiers (Tuned amplifiers) b. Wide band amplifiers. 6. Based on the number of stages, a. Single stage amplifiers b. Two stage amplifiers c. Multistage amplifiers. 7. Based on the type of coupling
Amplifiers
a. RC coupled amplifiers b. Inductive coupled amplifiers c. Transformer coupled amplifiers and d. Direct coupled amplifiers. 8. Based on the output a. Voltage amplifiers b. Power amplifiers In general, the different types of amplifiers can be designed using any of the three transistor configurations i.e., CE, CB and CC. Each of these configurations can be used for certain specific application based on their characteristic features. Characteristics of amplifiers: To choose a right kind of amplifier for a purpose it is necessary to know the general characteristics of amplifiers. They are: Current gain, Voltage gain, Power gain, Input impedance, Output impedance, Bandwidth. 1. Voltage gain: Voltage gain of an amplifier is the ratio of the change in output voltage to the corresponding change in the input voltage. Since amplifiers handle ac signals, the instantaneous output voltage V 0 and instantaneous input voltage V i can replace V 0 and V I respectively. V Hence, AV = O Vi 2. Current gain: Current gain of an amplifier is the ratio of the change in output current to the corresponding change in the input current. i.e., current and input current respectively.
3. Power gain: Power gain of an amplifier is the ratio of the change in output power to the corresponding change in the input power. where p o and p i are the output power and input power respectively. Since power p = v i, The power gain i.e., Ap =
= AV x Ai (Power amplification of the input signal takes place at the expense of the d.c. energy.)
Ap =
v o io v i ii
po pi
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Transistor Amplifiers
4. Input impedance (Z i ): Input impedance of an amplifier is the impedance offered by the amplifier circuit as seen through the input terminals and is given by the ratio of the input voltage (v i ) to the input current (i i ). i.e.,
Zi =
vi ii .
5. Output impedance (Z 0 ): Output impedance of an amplifier is the impedance offered by the amplifier circuit as seen through the output terminals and is given by the ratio of the output voltage (v o ) to the output current(i o ).
Zo =
vo io
6. Band width (BW): The range of frequencies over which the gain (voltage gain or current gain) of an amplifier is equal to and greater than 0.707 times the maximum gain is called the bandwidth. In figure shown, f 1 and f 2 are the lower and upper cutoff frequencies where the voltage or the current gain falls to 70.7% of the maximum gain. Bandwidth BW=(f 2 f 1 ). Graph showing the frequency response A v or A i mid band region Am 0 . 707A m f (Hz)
f1
f2
f (Hz)
f1
f2
Bandwidth is also defined as the range of frequencies over which the power gain of amplifier is equal to and greater than 50% of the maximum power gain. The cutoff frequencies are also defined as the frequencies where the power gain falls to 50% of the maximum gain. Therefore, the cutoff frequencies are also called as Half power frequencies. Gain in decibels: Often it is convenient to consider the gain of an amplifier on a logarithmic scale than on a linear scale. Such a unit, of the logarithmic scale is called the bel. The power gain of an amplifier in bel is
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written as Gain in bel = log 10 (p 0 / p i ) where, p i and p o are input and output powers respectively. Since bel is too large a unit for most practical purposes, a smaller unit called decibel (dB) which is (1/10)th of bel is used. Gain in dB = 10 log 10 Decibel voltage gain and Decibel current gain: The power in a resistive branch is proportional to square of the voltage or current, therefore, expressing the power ratio (P o /p i ) in terms of a voltage ratio or a current ratio,
vo 10 log10 v i = 20 log A v the voltage gain in dB = where v i is the input voltage and v o , the output voltage assuming the same input and output resistances. Similarly, Current gain in dB = 20 log A i . Graph showing the frequency response in dB gain
2
(p o / p i )
A v or A i or A p in dB
(Amax
Amax (dB)
(dB)-3dB)
f1
f2
f (Hz)
The cutoff frequencies are also defined as the frequencies where the gain of the amplifier falls by 3 dB from the maximum gain Common Emitter Amplifier: Figure shows the circuit of a single stage common emitter (CE) amplifier using an NPN transistor. The input signal v s is applied between the base and the emitter (since the bypass capacitor C E keeps the Emitter ac potential at zero). The output is taken across the load resistance R L. The resistors R 1 and R 2 provide the necessary d.c. bias to the transistor.
+Vcc
RC
R1 CB
CC
vs
R2
vCE
RE CE
RL
vo= vce=
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Transistor Amplifiers
The Resistor R C is generally of a large value compared to the input resistance of the transistor which acts as a collector load. Coupling capacitors C B and C C block the dc and allow the a.c. C E is called the bypass capacitor. It grounds the emitter for ac signals and thereby avoids the negative feedback for a.c. However the Resistor R E stabilises the operating point since the emitter dc potential is unaffected. Without C E , the alternating voltage across R E results in reduced i b and hence i c . This reduces the gain of the amplifier. Circuit operation: During the positive half cycles of input signal, base emitter junction is more forward biased and hence the base current increases. This will increases collector current i C by a large amount. Therefore, the voltage across resistance R C (i.e., i C R C ) increases. Which reduces the output voltage. Similarly, during negative half cycles of the input signal, collector current decreases by a large amount producing a decreased voltage across R C . This increases the output voltage. Output across the transistor is given by v o =V CC i C R C . Thus the output voltage in CE amplifier is 180 o out of phase with the input signal as shown in the figure. Characteristics of CE amplifier: Current gain and voltage gain are high. Power gain is very high Input and output impedances are moderate as compared to CB and CC amplifiers. (The typical values of input and output impedances are 1 k and 10 k respectively. Therefore, the input impedance is low and the output impedance is high) The effective input capacitance is large and hence the frequency response though good, is not as good as of CB or CC amplifiers. There will be 180 0 phase shift between the input and output voltages. Applications: CE amplifier configurations are basically used as voltage amplifiers viz. Preamplifiers driving the power amplifiers. CE amplifiers are called as small signal amplifiers since the small amplitude of the input signal is required to drive such amplifiers unlike the power amplifiers, which require signal of large amplitude. Despite its large power gain, CE amplifier cannot be used as a power amplifier. This is because; it cannot drive the low impedance load due to its high output impedance.
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Am
0. 707A m
f (Hz)
f1
f2
At low frequencies, the capacitive reactance of the coupling capacitor C B will be high. Therefore, a small fraction of the input voltage appears across the input terminals. This decreases the output voltage and hence the overall voltage gain is low. With increase in frequency, the capacitive reactance decreases and the input to the amplifier increases. Therefore, the voltage gain increases. At high frequencies, the capacitive reactance of the coupling capacitor C C will be very low and it behaves as a short circuit. Hence the loading effect of the resistance R C with R L increases. This decreases the output voltage and hence the overall voltage gain decreases. Further, the decrease in capacitive reactance of the base emitter junction and the stray capacitance at the output section will lead to the decrease in voltage gain at high frequencies. In the mid frequency range, voltage gain of the amplifier is constant. As the frequency increases, the reactance of C C decreases which tends to increase the gain. At the same time, the loading effect of the R C with R L increases and tends to decrease the voltage gain. These two factors almost cancel each other resulting in a constant gain in the mid frequency range. Common Base Amplifier : Fig. shows the circuit of a common base amplifier. Here, the resistors R E , R C along with the supply voltages +V CC and V EE bias the transistor to work in its active region. The input signal v s is applied across emitter base junction through the capacitor C C and the amplified output is taken across the collector base junction. i.e., v o = v cb . Capacitors C C and C B block the d.c component and allow only ac signal to pass through.
-VEE
RE
+VCC
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CB RC CC
Transistor Amplifiers
Circuit operation: During the positive half cycles of the input signal, forward bias on the emitter-base junction decreases. This results in decrease of the emitter current i e thereby decreasing the collector current i c . Applying KVL to the output section, v o = v cb = V CC i C R C . Therefore, the decrease in i C causes the voltage drop i C R C to decrease. This increases v CB . i.e., v o increases. Similarly, during the negative half cycles of the input signal, forward bias on the emitter-base junction increases resulting in increase of the emitter current i e and the collector current i C . Therefore, the voltage drop across R C increases. Thus, v cb or v o decreases. Therefore, the input and output voltages are in phase. Since I C < I E , there is no current gain in CB amplifier. By selecting a resistance of large value at the output (i.e. R C ), the magnitude of the output voltage will be much greater than the magnitude of input voltage. Therefore, the voltage gain is high. Characteristics of CB amplifier: The voltage gain is fairly high (200- 300) The current gain is less than 1. The power gain is also fairly large and is nearly equal to voltage gain. The input impedance is very low (20 to 200 ). The output impedance is very high (50k to several M ). It is suitable for amplifying high frequencies (VHF). (This is because, in the low frequency region, the input resistance between the base and the emitter is very low compared to capacitive reactance of the capacitor. Therefore, more input voltage appears across the coupling capacitor C B and a negligible fraction of the input signal appears across the EB junction Therefore, the voltage gain is very low at low frequencies. Further at high frequencies, especially in the VHF range, the reactance of the input capacitor will be negligibly small allowing whole
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of the input signal to appear at the EB junction leading to increased output). There is no phase shift between the input and the output signals. Applications: It is used as voltage amplifier in RF circuits It is used as a constant current source It is used to match low Output impedance circuit with that of a high impedance load. Despite its fairly large power gain (equal to voltage gain), CB amplifier is never used as a Power amplifier because of very high Output impedance. Common Collector Amplifier:
+Vcc
R1 CB CE
vs
R2
RE
vo= ve=
Figure shows the transistor in CC configuration with voltage divider bias. Here the resistors R 1 , R 2 , R E along with the supply voltage V CC forms the biasing and stabilisation network. In this circuit, since R C = 0 , the potential at collector is The input voltage is applied to base with respect to collector and the output is taken at emitter with respect to collector. Circuit operation: Since the output is taken at the emitter, v E =i E R E & v o =i e R E . Applying KVL to the input loop we get v S = v BE + i E R E ------ (1) During the positive half cycles of the input voltage, forward bias on the base emitter base junction increases. This increases base current and hence the emitter current. Therefore, the voltage drop i E R E increases. Since v 0 = i e R E , v 0 also increases. Similarly, any decrease in the input voltage causes the output voltage to decrease. i.e. any variation at the input causes the same variation at the output. Thus the input and the output signals are in phase. But, from eq.(1), v S = v BE + i E R E i.e., v E = i E R E = v s -v BE or v o = v s -v be
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Transistor Amplifiers
This means that the output voltage is always slightly less than the input voltage. Therefore, the voltage gain is always less than unity. Since the output voltage (emitter voltage) follows the input voltage without any phase change, the circuit is also called as EMITTER FOLLOWER. Characteristics of CC amplifier: The input impedance is very high (>450 k ) The output impedance is very low (around 50 ) The voltage gain is less than unity (typical values are 0.99,0.98,--) Provides high current gain (typical values are 101, 202,----) There is no phase shift between the input and the output waveforms. Applications: i) Since the CC amplifier circuit provides very high input impedance and very low output impedance, it is used for impedance matching purposes (i.e., to match high Output impedance circuit with that of a low impedance load) ii) It is used as a power amplifier. Comparison of CE, CB and CC amplifiers: A study of the different amplifier configurations provide valuable information, which can help in making the right choice for a specific purpose. For example, a power amplifier requires a large input signal and a signal source may be very weak. In this case, the signal is first amplified using a CE amplifier and the amplified voltage is used as the input for the power amplifier. Consider a low impedance load (a device such as speaker). To deliver maximum power to the load, the output impedance of amplifier should be low. Common collector amplifier satisfies this requirement. Though the voltage gain of a CC amplifier is less than 1, it is still useful as power amplifier because of its large current gain. Further, due to its low output impedance, it delivers large power to the low impedance loads. Commonly used transistor configuration: Amongst the three transistor configurations, the CE circuit is used in most of the transistor applications due to the following reasons. 1. Current gain is very high. It may range from 20 to 500 2. Voltage gain is high 3. Power gain is high 4. Moderate output to input impedance ratio (50). However this configuration cannot be used for impedance matching purpose like CC configuration.
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Comparison of CB, CE and CC amplifiers: Parameters 1. Current gain 2. Voltage 3. Power gain gain CB Less than 1( 1) High High Lowest Highest 0 0 or 2 CE High ( >1) Very high Highest Moderate Moderate CC Highest ( >1) +1) (=
Less than 1 >1 (low when compared to CB & CE amplifiers) Highest Lowest 0 0 or 2 Used as a Buffer amplifier, impedance matching unit
AC and DC equivalent circuits A transistor amplifier circuit has certain dc conditions for its operation. These dc conditions are provided by the biasing arrangement. The ac signal to be amplified is superposed on the dc values of voltage and current. Hence in an amplifier circuit in action both ac and dc conditions prevail simultaneously. The analysis of a transistor amplifier circuit becomes easier by analysing the dc and ac behavior of the circuit separately. This is done by using the appropriate "Equivalent circuits". i.e, D.C equivalent circuit and A.C equivalent circuit. D.C equivalent circuit: The dc equivalent circuit of a transistor amplifier is the configuration of only those circuit elements, which are responsible for the dc conditions of the circuit. A.C equivalent circuit: The ac equivalent circuit of a transistor amplifier is the configuration of only those circuit elements, which are responsible for ac conditions of the circuit. Steps involved in writing D.C equivalent circuit: 1. All a.c. sources are to be reduced to zero 2. Since the capacitors offer infinite reactance to the flow of d.c., all the capacitors are to be treated as open circuits .
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Transistor Amplifiers
3. Inductors if any appear in the circuits, they are to be replaced by short circuit equivalents since the inductive reactance is zero for d.c. D.C analysis of a CE amplifier with voltage divider bias using D.C equivalent circuit: For a single stage CE amplifier with voltage divider bias, applying the steps 1 to 3 , the d.c equivalent circuit can be written as follows. +Vcc +VCC
R1 CB
RC
vo
R1
RC
vs
R2
RE
CE
R2
RE
To find the Operating point (V CEQ & I CQ ) using D.C equivalent circuit: Voltage across R 2 is given by,
+VCC
+
R1 RC
ICRC _
V2 =
R1 + R 2
R2
VCC
+
V2
_
+
R2
VC+ E _
+ VB E - IE V E RE _
V BE is 0.7V for silicon transistors and is 0.3V for Germanium transistors. Applying KVL to the output section, V CE =V CC - I C (R C + R E ) 2 Equations (1) and (2) give the coordinates of operating point. To draw the d.c load line: End points of the d.c load line are given by substituting the limiting conditions in equation (2). i) When I C = 0, then V CE(max) =V CC (point B)
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I C(m a x) =
VC C (R C + R E ) (point A)
By joining these two points a line is drawn Which gives the d.c. load line as in fig. 0
A.C equivalent circuit: Steps involved in writing a.c equivalent circuit: 1. All d.c. sources are to be reduced to zero 2. Since the capacitors offer minimum reactance to the flow of a.c, all the capacitors are replaced by their short circuit equivalents. 3. Inductors if any appear in the circuits, they are to be replaced by open circuit equivalents since the inductive reactance is very high for a.c. 4. The transistor is to be replaced by one of its a.c equivalent models like r e model or hybrid equivalent model. The most commonly used transistor ac equivalent models are, (1) r e Model and (2) Hybrid equivalent model. The r e model is derived from the diode equivalent circuit. Diode Equivalent circuit: From the input characteristics of a transistor, it is found that the input section (i.e., Emitter-Base junction) behaves like a semiconductor diode. Therefore, the E-B junction can be replaced by a semiconductor diode. Similarly, form the output characteristics of a transistor, it is clear that the output section (i.e., Collector-Base junction) behaves like a constant current source. Therefore, the C-B or C-E terminals can be replaced by a constant current source as shown in fig. Transistor in AC equivalent circuit Diode equivalent CB mode (re model)
iE
iC
iE
vEB
iB
vCB
vEB
iB
iE
iC
vCB
iE vEB re
iB
iC
IE
vCB
r e Model: Since the Emitter-Base junction is always forward biased, for small a.c. signals, the semiconductor diode representing the input section can be replaced by its equivalent resistance r e
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Transistor Amplifiers
25 mV
IE
where I E is
re =
called a.c Emitter resistance and is given by
the d.c emitter current. The directions of the currents shown in the circuits here may not be the actual directions in which the currents flow. As a matter of standardisation, all the currents are considered such that they flow into the transistor. AC equivalent circuit (r e model) of transistor in CE mode: Transistor in C-E Diode equivalent AC equivalent circuit (re model)
iB v BE
iC
vCE
iB
vBE
iE
iB
iC
vCE
25 mV I B
vBE
iB
iC
iB
re
iE
vCE
we get,
re =
. Therefore,
the
diode resistance in CE mode is given by, Where I B is the d.c current through base. r e is also called as r in(base) . Analysis of a single stage CE amplifier using r e model :
re =
25 mV IB
+VCC
R1
RC
CC
iO
CB
ic
is
vs
iB
R2 RE
RL
vo
CE
io
is vs
R1 R2
iB
ic
iB RC RL
re
vo
iE
AC equivalent circuit (re model) for the single stage CE amplifier Replacing R 1 R 2 by R B and R C R L by R ac , the above circuit can be Transistor simplified as follows.
is
iB
re
ic
iB
io
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vs
Let v s , i s, v o , and i O be the input voltage, input current, output voltage and output current respectively for a single stage CE amplifier as shown in the circuit. 1. Input impedance (Z i ) or r in(stage) : v Zi = s is We know that
Zi =
Also, v s = i s (R 1 R 2 r e ). i s (R 1 R 2 re )
in(base)
= re
Zo =
vo io
RL
i o (R C
iO
)