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ECE542 Advanced Semiconductor Devices: (Zheng Yang, Department of Electrical and Computer Engineering, Spring, 2013)

This document outlines the syllabus for the ECE542 Advanced Semiconductor Devices course taught by Professor Zheng Yang in the spring of 2013. The course will cover classical and advanced semiconductor devices as well as emerging nanoscale devices. It will meet on Mondays and Wednesdays from 5:30-6:45pm in LH 320 between January 14 and May 3. The midterm will be on March 18 and the final exam during the week of May 6-10. Grades will be based on two quizzes, a midterm, and a final exam. Homework and attendance may also affect borderline grades.

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73 views1 page

ECE542 Advanced Semiconductor Devices: (Zheng Yang, Department of Electrical and Computer Engineering, Spring, 2013)

This document outlines the syllabus for the ECE542 Advanced Semiconductor Devices course taught by Professor Zheng Yang in the spring of 2013. The course will cover classical and advanced semiconductor devices as well as emerging nanoscale devices. It will meet on Mondays and Wednesdays from 5:30-6:45pm in LH 320 between January 14 and May 3. The midterm will be on March 18 and the final exam during the week of May 6-10. Grades will be based on two quizzes, a midterm, and a final exam. Homework and attendance may also affect borderline grades.

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পিঁপড়া পিঁপড়া
Copyright
© Attribution Non-Commercial (BY-NC)
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ECE542 Advanced Semiconductor Devices

Syllabus

ECE542

Advanced Semiconductor Devices

(Zheng Yang, Department of Electrical and Computer Engineering, Spring, 2013)

Schedule: Midterm: Final: Course website: Regular office hours:

17:30~18:45, Monday and Wednesday, LH 320 (01/14/2013~05/03/2013) 17:30~18:45 March 18, 2013, LH 320 TBD during the week 05/06/2013~05/10/2013 http://www.ece.uic.edu/~zyang/Teaching/20122013Spring/index.html ERF 3017, 16:00~17:15, Monday (01/14/2013~05/03/2013). [Additional office hour appointments can be requested by email to [email protected].]

Prerequisite: Descriptions:

EE346 Solid State Device Theory, EE448 Transistors, and ECE540 Physics of Semiconductor Devices; or equivalent courses with instructors consent. ECE542 begins with the review of classical semiconductor physics and devices (e.g., pnjunction diode, MOSFET, and bipolar transistor) learned in the prerequisite courses. Then classical optoelectronic and photonic devices, such as light-emitting diodes (LEDs), laser diodes, photodetectors, and solar cells are discussed. Advanced semiconductor devices, such as tunnel diode, tunneling field-effect transistor (TFET), thin film transistor (TFT), JFET, and MESFET, are introduced subsequently. After that, physics background on heterostructure, quantum well, superlattice, two-dimensional electron gas (2DEG), modulation doping, Coulumb blockade effect, quantized transport, ballistic transport, and quantum capacitance are discussed. Based on the knowledge, high electron-mobility transistor (HEMT), modulation-doped FET (MODFET), single-electron transistor, floating gate MOSFET, and ballistic transistor are introduced. Finally, state-of-the-art semiconductor nanoelectronic and photonic devices based on carbon nanotube, nanowire, graphene, and MoS2 are briefly discussed.

Course Materials: Reference books:

Lecture notes and slides (posted after course) + Reference books.

(1) S. M. Sze and Kwok K. Ng, Physics of Semiconductor Physics (3rd), Wiley, 2007 (2) Supriyo Datta, Quantum Transport Atom to Transistor, Cambridge University Press, 2005 Further-reading reference books: See the list posted separately.

Grading:

The grading is based on two quizzes (15%2=30%), midterm (30%), and final (40%). The attendance and the completion of homework assignments contribute as plus-andminus and contributes to the determination of the grades for student NEAR the grading boundary (between A and B, B and C, etc).

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