EMT111

CHAPTER 1

Introduction to Semiconductor

By
Pn. Aini Syuhada Md Zain
Introduction to Semiconductor -
Chapter Outline :

1.8 Voltage Current Characteristic of a Diode
1.9 Diode Models
1.10 Testing a Diode
-When a forward bias voltage is
applied current called forward
current,
-In this case with the voltage
applied is less than the barrier
potential so the diode for all
practical purposes is still in a
non-conducting state. Current is
very small.
-Increase forward bias voltage
current also increase
F
I
FIGURE 1-26 Forward-bias measurements
show general changes in V
F
and I
F
as V
BIAS
is
increased.
1.8 Voltage-Current Characteristic of a Diode
( V-I Characteristic for forward bias)
-With the applied voltage
exceeding the barrier
potential (0.7V), forward
current begins increasing
rapidly.
-But the voltage across the
diode increase only above
0.7 V.
FIGURE 1-26 Forward-bias measurements
show general changes in V
F
and I
F
as V
BIAS
is
increased.
1.8 Voltage-Current Characteristic of a Diode
( V-I Characteristic for forward bias)
-Plot the result of
measurement in Figure 1-
26, you get the V-I
characteristic curve for a
forward bias diode
- Increase to the right
- increase upward

F F
d I V r A A = /
'
dynamic resistance r
d
decreases as you move up the
curve
F
V
F
I
V V
F
7 . 0 <
zero
bias
V V
F
7 . 0 ~
1.8 Voltage-Current Characteristic of a Diode
( V-I Characteristic for forward bias)
Reverse
Current
Breakdown
voltage
-not a normal
operation of pn
junction devices
- the value can be
vary for typical Si
1.8 Voltage-Current Characteristic of a Diode
( V-I Characteristic for Reverse bias)
Combine-Forward bias
& Reverse bias Complete
V-I characteristic curve
1.8 Voltage-Current Characteristic of a Diode
( Complete V-I Characteristic curve)
Forward biased
dioed :
for a given value
of

For a given

Barrier potential
decrease as T
increase

Reverse current
breakdown
small & can be
neglected
| |
F
I T ,
F
V
|
F F
V I ,
1.8 Voltage-Current Characteristic of a Diode
( Temperature effect on the diode V-I Characteristic)
Directional of current
cathode anod
1.9 Diode Models
( Diode structure and symbol)
DIODE
MODEL
The Ideal
Diode Model
The Complete
Diode Model
The Practical
Diode Model
1.9 Diode Models
Assume
Forward
current, by
Ohms law


Ideal model of diode-
simple switch:
Closed (on) switch -> FB
Open (off) switch -> RB
V V
F
0 =
LIMIT
BIAS
F
R
V
I =
BIAS R
R
V V
A I
=
= 0
(1-2)
1.9 Diode Models
( The ideal Diode model)
Adds the barrier potential
to the ideal switch model
is neglected
From figure (c):

The forward current [by
applying Kirchhoffs voltage
low to figure (a)]


Ohms Law
d r
'
Equivalent to close
switch in series with a
small equivalent voltage
source equal to the barrier
potential 0.7V
Represent by
produced across the pn
junction
F
V
Same as ideal diode
model
) ( 3 . 0
) ( 7 . 0
Ge V V
Si V V
F
F
=
=
0 =
LIMIT
R F BIAS
V V V
LIMIT F R
R I V
LIMIT
=
LIMIT
F BIAS
F
R
V V
I

=
BIAS R
R
V V
A I
=
= 0
(1-3)
1.9 Diode Models ( The Practical Diode model)
Complete model of diode
consists:
Barrier potential
Dynamic resistance,
Internal reverse resistance,
The forward voltage:

The forward current:
d r
'
R r
'
acts as closed switch in
series with barrier
potential and small
d
r
'
R r
'
acts as open
switch in parallel
with the large
'
7 . 0
d F F
r I V V + =
'
7 . 0
d LIMIT
BIAS
F
r R
V V
I
+

=
(1-4)
(1-5)
1.9 Diode Models ( The Complete Diode model)
10V
1.0k
5V
1.0k
(1) Determine the forward voltage and forward current
[forward bias] for each of the diode model also find the
voltage across the limiting resistor in each cases.
Assumed rd = 10O at the determined value of forward
current.
1.9 Diode Models ( Example)
a) Ideal Model:



b) Practical Model:


(c) Complete model:

V A R I V
mA
V
R
V
I
V
LIMIT F R
BIAS
F
F
LIMIT
10 ) 10 1 )( 10 10 (
10
1000
10
0
3 3
= O = =
=
O
= =
=

V A R I V
mA
V V
R
V V
I
V V
LIMIT F R
LIMIT
F BIAS
F
F
LIMIT
3 . 9 ) 10 1 )( 10 3 . 9 (
3 . 9
1000
7 . 0 10 ) (
7 . 0
3 3
= O = =
=
O

=
=

V k mA R I V
mV mA V r I V V
mA
k
V V
r R
V V
I
LIMIT F R
d F F
d LIMIT
BIAS
F
LIMIT
21 . 9 ) 1 )( 21 . 9 (
792 ) 10 )( 21 . 9 ( 7 . 0 7 . 0
21 . 9
10 1
7 . 0 10 7 . 0
'
'
= O = =
= O + = + =
=
O + O

=
+

=
1.9 Diode Models ( Example)
Diodes come in a variety of sizes and shapes. The design and structure is
determined by what type of circuit they will be used in.
1.9 Diode Models ( Typical Diodes)
Testing a diode is quite simple, particularly if the multimeter
used has a diode check function. With the diode check function
a specific known voltage is applied from the meter across the
diode.
K A A K
With the diode check
function a good diode will
show approximately .7 V or
.3 V when forward biased.
When checking in reverse
bias the full applied testing
voltage will be seen on the
display.
1.10 Testing A Diodes ( By Digital multimeter)
Defective Diode
1.10 Testing A Diodes ( By Digital multimeter)
Select OHMs range
Good diode:
Forward-bias:
get low resistance reading (10 to 100
ohm)
Reverse-bias:
get high reading (0 or infinity)
1.10 Testing A Diodes ( By Analog multimeter ohm
function )
P-materials are doped with trivalent impurities
N-materials are doped with pentavalent impurities
P and N type materials are joined together to form a
PN junction.
A diode is nothing more than a PN junction.
At the junction a depletion region is formed. This
creates barrier which requires approximately .3 V for a
Germanium and .7 V for Silicon for conduction to take
place.
Diodes, transistors, and integrated circuits are
all made of semiconductor material.
Summary
When reversed biased a diode can only withstand
so much applied voltage. The voltage at which
avalanche current occurs is called reverse breakdown
voltage.
There are three ways of analyzing a diode. These
are ideal, practical, and complex. Typically we use a
practical diode model.
A diode conducts when forward biased and does not
conduct when reverse biased
Summary