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The document provides an overview of the objectives and units covered in the course EC6201 ELECTRONIC DEVICES. The 5 units cover the following topics: PN junction diodes and their characteristics; bipolar junction transistors including current equations and models; field effect transistors including JFETs, MOSFETs, and other types; special semiconductor devices such as tunnel diodes, lasers, and optoelectronic devices; and power devices including SCRs, triacs, and power MOSFETs as well as display devices like LEDs and LCDs. The course aims to acquaint students with the construction, theory, and operation of basic electronic devices.

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185 views1 page

Edc

The document provides an overview of the objectives and units covered in the course EC6201 ELECTRONIC DEVICES. The 5 units cover the following topics: PN junction diodes and their characteristics; bipolar junction transistors including current equations and models; field effect transistors including JFETs, MOSFETs, and other types; special semiconductor devices such as tunnel diodes, lasers, and optoelectronic devices; and power devices including SCRs, triacs, and power MOSFETs as well as display devices like LEDs and LCDs. The course aims to acquaint students with the construction, theory, and operation of basic electronic devices.

Uploaded by

ajindec23
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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EC6201 ELECTRONIC DEVICES L T P C 3003 OBJECTIVES: To acquaint the students with the construction, theory and operation of the

basic electronic devices such as PN junction diode, Bipolar and Field effect Transistors, Power control devices, LED, LCD and other Opto-electronic devices UNIT I SEMICONDUCTOR DIODE 9 PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics. UNIT II BIPOLAR JUNCTION 9 NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of CE, CB CC-Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor. UNIT III FIELD EFFECT TRANSISTORS 9 JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significanceMOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, EMOSFET,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET.

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UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9 Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR. UNIT V POWER DEVICES AND DISPLAY DEVICES 9 UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD. TOTAL : 45 PERIODS TEXT BOOKS 1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc GrawHill Inc. 2007. REFERENCES: 1. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition, 1978. 2. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice Hall, 10th edition,July 2008.

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