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Isc 2SD5703: Isc Silicon NPN Power Transistor

The document summarizes the specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5703. It has a high breakdown voltage of 1500V minimum and is designed for color TV horizontal output applications. The transistor has absolute maximum ratings including collector-base voltage of 1500V, collector-emitter voltage of 800V, and continuous collector current of 10A. It also lists typical electrical characteristics such as a collector-emitter saturation voltage of 5V maximum and fall time of 0.3us.

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455 views2 pages

Isc 2SD5703: Isc Silicon NPN Power Transistor

The document summarizes the specifications for the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD5703. It has a high breakdown voltage of 1500V minimum and is designed for color TV horizontal output applications. The transistor has absolute maximum ratings including collector-base voltage of 1500V, collector-emitter voltage of 800V, and continuous collector current of 10A. It also lists typical electrical characteristics such as a collector-emitter saturation voltage of 5V maximum and fall time of 0.3us.

Uploaded by

dragon-red0816
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SD5703

DESCRIPTION High Breakdown VoltageVCBO= 1500V (Min) High Switching Speed Low Saturation Voltage

APPLICATIONS Designed for color TV horizontal output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25)


SYMBOL PARAMETER VALUE UNIT

VCBO

Collector-Base Voltage

1500

VCEO

Collector-Emitter Voltage

800

VEBO

Emitter-Base Voltage

IC

Collector Current- Continuous

10

IC

Collector Current- Pulse Collector Power Dissipation @ TC=25

30

PC

70

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-55~150

isc Websitewww.iscsemi.cn

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor


ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN

2SD5703

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 8A; IB= 1.6A


B

5.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A; IB= 1.6A


B

1.5

ICES

Collector Cutoff Current

VCE= 1400V; VBE= 0

mA

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

10

ICBO

Collector Cutoff Current

VEB= 4V; IC= 0

mA

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

15

40

hFE-2

DC Current Gain

IC= 8A; VCE= 5V IC= 6A, IB1= 1.2A; IB2= -2.4A; VCC= 200V; RL= 33.3

5.3

7.3

tf

Fall Time

0.3

isc Websitewww.iscsemi.cn

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