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Problem Set 1

This document contains 4 problems from a homework assignment for an electrical engineering course at MIT. The problems cover topics such as: 1) Calculating majority carrier type and concentration for silicon doped with different dopants. 2) Calculating hole and electron concentration at different temperatures given intrinsic carrier concentration. 3) Calculating sheet resistance and resistance of an n-type ion implanted resistor layout. 4) Plotting potential profile and calculating diffusion currents for a silicon slab with a non-uniform electron distribution.

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Biswajit Behera
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295 views

Problem Set 1

This document contains 4 problems from a homework assignment for an electrical engineering course at MIT. The problems cover topics such as: 1) Calculating majority carrier type and concentration for silicon doped with different dopants. 2) Calculating hole and electron concentration at different temperatures given intrinsic carrier concentration. 3) Calculating sheet resistance and resistance of an n-type ion implanted resistor layout. 4) Plotting potential profile and calculating diffusion currents for a silicon slab with a non-uniform electron distribution.

Uploaded by

Biswajit Behera
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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Massachusetts Institute of Technology Department of Electrical Engineering and Computer Science 6.

012 Microelectronic Devices and Circuits Spring 2007 February 14, 2007 - Homework #1 Due - February 21, 2007

_____________________________________________________________ Problem 1 A piece of silicon is doped with Na = 2x1015 cm-3 and Nd = 1x1015 cm-3 a) What is the majority carrier? Is the silicon type n or type p? b) Find the electron and hole concentration and mobility at room temperature. c) We want increase the electron concentration to 1x1017 cm-3. What is the additional dopant type and concentration? What is the new electron mobility? Problem 2 A piece of silicon is doped with Nd = 1x1015 cm-3. Below is a table for the intrinsic electron concentration for three different temperatures. ni 1x1010 cm-3 1x1015 cm-3 1x1017 cm-3 Temperature 300 K (room temp.) 600 K 1150 K

Calculate the total hole and electron concentration for all three temperatures. Problem 3 Given a uniformly n-type ion-implanted layer with thickness t = 1 um and doping concentration Nd = 1017 cm-3. a) What is the sheet resistance? b) What is the resistance of the layout shown below? Assume that the contacts each contribute .65 squares.

c) By adding additional dopants, we make a new n-type ion-implanted resistor with an average doping concentration Nd1 = 2x1017 cm-3 over the depth 0 < d < 0.5 m and Nd2 = 1017 cm-3 over the depth 0.5 m < d < 1 m. Find the new sheet resistance.

Problem 4 A slab of silicon has the following electron distribution.

a) Assume thermal equilibrium. Plot the potential as a function of x. b) What is the electron diffusion current density? Hole diffusion current density? Assume Dn = 2 x Dp = 26 cm2/s c) The hole and electron diffusion current densities do not sum to zero; however, the silicon cannot have a net current since it is an open circuit. Explain what is happening.

Silicon Slab

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