Ece 195 Lab 1
Ece 195 Lab 1
MICROELECTRONICS
LABORATORY 1
SCHEMATIC
Inverter testbench
LAYOUT PARAMETERS
WP = 6.6 m;
LP = 0.8 m;
MP = 3 m;
WN = 8 m;
LN = 0.8 m;
MN = 3 m
INVERTER LAYOUT
PMOS
NMOS
METAL ROUTING
DRC
LVS
LPE
SP FILES (FRAGMENT)
input.spi
inverter.sp (edited)
RESULTS
Pre-simulation (schematic)
OFFSET VOLTAGE
PRESIM
POSTSIM
RISE TIME
PRESIM
POSTSIM
Layout simulation has less rise time then the schematic simulation which means bigger slew rate. Slew rate SCHEMATIC_RISE = Slew rate LAYOUT_RISE = = = 316.90 V/s = 381.36 V/S
FALL TIME
PRESIM
POSTSIM
Layout simulation has less fall time then the schematic simulation which means bigger slew rate. Slew rate SCHEMATIC_FALL = Slew rate LAYOUT_FALL = = GLITCHES = 622.84 V/s = 684.41 V/S
PRESIM POSTSIM
CONCLUSION Post simulations show that the CMOS inverter layout is better in performance than the schematic. The waveforms in both post- and pre-simulations are of many glitches due to parameters in rise time and fall time of 10 ns both---considering that the period is 100 ns---and also in the sizes of the CMOS. However, post simulation still proves better response in rise and fall time, including slew rate. It also has less glitch. Layout of the CMOS inverter used two metals, metal 1 and metal 2.