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Transistor (NPN) : CBO CEO EBO C C J STG

The document summarizes the specifications of an NPN transistor (S9013): 1) It provides the maximum ratings and electrical characteristics of the transistor, including breakdown voltages, current ratings, gain, and transition frequency. 2) The transistor has excellent hFE linearity and is complementary to another transistor (S9012). 3) Key specifications include a collector-emitter saturation voltage of 0.6V max, DC current gain of 64-400, and transition frequency of 30MHz min.

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65 views2 pages

Transistor (NPN) : CBO CEO EBO C C J STG

The document summarizes the specifications of an NPN transistor (S9013): 1) It provides the maximum ratings and electrical characteristics of the transistor, including breakdown voltages, current ratings, gain, and transition frequency. 2) The transistor has excellent hFE linearity and is complementary to another transistor (S9012). 3) Key specifications include a collector-emitter saturation voltage of 0.6V max, DC current gain of 64-400, and transition frequency of 30MHz min.

Uploaded by

angelmejias
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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S9013 TRANSISTOR (NPN)

FEATURE z Complementary to S9012 z Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 40 25 5 500 625 150 -55-150 Units V V V mA mW

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

1 2 3

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(sat) VCE=1V, IC= 500mA IC= 500mA, IB= 50mA IC= 500mA, IB= 50mA VCE=6V,IC=20mA,f=30MHz 150 40 0.6 1.2 V V MHz Test conditions MIN 40 25 5 0.1 0.1 0.1 64 400 TYP MAX UNIT V V V A A A

IC= 100A , IE=0 IC= 1mA , IB=0 IE= 100A , IC=0 VCB= 40V , VCE=20V , IE=0 IE=0

VEB= 5V, IC=0 VCE=1V, IC=50mA

Transition frequency

fT

CLASSIFICATION OF hFE(1)
Rank Range D 64-91 E 78-112 F 96-135 G 112-166 H 144-202 I 190-300 J 300-400

Typical Characteristics

S9013

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