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Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the SavantIC Semiconductor 2N5671 and 2N5672 silicon NPN power transistors. The transistors are in a TO-3 package and are intended for high current and fast switching industrial applications. Key specifications include absolute maximum ratings, thermal characteristics, electrical characteristics like current gain and switching times.

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Deepa Devaraj
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80 views3 pages

Silicon NPN Power Transistors: Savantic Semiconductor Product Specification

This document provides specifications for the SavantIC Semiconductor 2N5671 and 2N5672 silicon NPN power transistors. The transistors are in a TO-3 package and are intended for high current and fast switching industrial applications. Key specifications include absolute maximum ratings, thermal characteristics, electrical characteristics like current gain and switching times.

Uploaded by

Deepa Devaraj
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5671 2N5672

DESCRIPTION With TO-3 package High current ,high speed APPLICATIONS Intended for high current and fast switching industrial applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

Absolute maximum ratings(Ta= )


SYMBOL VCBO PARAMETER 2N5671 Collector-base voltage 2N5672 2N5671 VCEO VEBO IC IB PD Tj Tstg Collector-emitter voltage 2N5672 Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 120 7 30 10 140 200 -65~200 V A A W Open emitter 150 90 V CONDITIONS VALUE 120 V UNIT

THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT /W

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5671 2N5672

CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5671 IC=0.2A ;IB=0 2N5672 IC=15A; IB=1.2A IC=15A ;IB=1.2A IC=15A ; VCE=5V VCE=80V; IB=0 2N5671 Collector cut-off current 2N5672 2N5671 2N5672 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Trainsistion frequency VCE=110V; VBE(off)=1.5V VCE=135V; VBE(off)=1.5V VCE=100V;VBE(off)=1.5V; TC=150 120 0.75 1.5 1.6 10 12 10 mA 15 10 10 20 20 40 MHz 100 mA V V V mA CONDITIONS MIN 90 V TYP. MAX UNIT SYMBOL

VCEO(SUS)

Collector-emitter sustaining voltage

VCEsat VBEsat VBE ICEO

Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current

ICEV

VEB=7V; IC=0 IC=15A ; VCE=2V IC=20A ; VCE=5V IC=2A ; VCE=10V;f=1MHz

Switching times ton ts tf Turn-on time Storage time Fall time IC=15A ;IB1=- IB2=1.2A VCC=30V;tp=0.1ms 0.5 1.5 0.5 s s s

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors


PACKAGE OUTLINE

2N5671 2N5672

Fig.2 outline dimensions (unindicated tolerance:0.10mm)

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