This document provides technical specifications for PNP power silicon transistor devices qualified to MIL-PRF-19500/545 standards. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other parameters. It also provides electrical characteristics for on/off states, dynamic characteristics, and switching times. Safe operating areas under different test conditions are specified.
This document provides technical specifications for PNP power silicon transistor devices qualified to MIL-PRF-19500/545 standards. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other parameters. It also provides electrical characteristics for on/off states, dynamic characteristics, and switching times. Safe operating areas under different test conditions are specified.
This document provides technical specifications for PNP power silicon transistor devices qualified to MIL-PRF-19500/545 standards. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other parameters. It also provides electrical characteristics for on/off states, dynamic characteristics, and switching times. Safe operating areas under different test conditions are specified.
This document provides technical specifications for PNP power silicon transistor devices qualified to MIL-PRF-19500/545 standards. It lists maximum ratings for collector-emitter voltage, collector-base voltage, and other parameters. It also provides electrical characteristics for on/off states, dynamic characteristics, and switching times. Safe operating areas under different test conditions are specified.
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TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545 Devices 2N5151 2N5151L 2N5153 2N5153L Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
Symbol VCEO VCBO VEBO IC(3, 4) PT Tj, Tstg Symbol RJC
All Units 80 100 5.5 2.0 1.0 11.8 -65 to +200 Max. 15
Units Vdc Vdc Vdc Adc W W C Unit C/W
TO- 5* 2N5151L, 2N5153L
@ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range
THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 6.67 mW/0C for TA > +250C 4) Derate linearly 80 mW/0C for TC > +250C 0
2N5151, 2N5153
TO-39* (TO-205AD) *See appendix A for package outline
Characteristics Symbol V(BR)CEO IEBO Min. 80 1.0 1.0 1.0 1.0 50 Max. Unit Vdc Adc mAdc Adc mAdc Adc
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0 Emitter-Base Cutoff Current VEB = 4.0 Vdc, Ic = 0 VEB = 5.5 Vdc, Ic = 0 Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 0 VCE = 100 Vdc, VBE = 0 Collector-Base Cutoff Current VCE = 40 Vdc, IB = 0
ICES ICEO
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120101 Page 1 of 2
2N5151, 2N5153 JAN SERIES
ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS Forward Current Transfer Ratio IC = 50 mAdc, VCE = 5 Vdc IC = 2.5 Adc, VCE = 5 Vdc 2N5151 2N5153 IC = 5 Adc, VCE = 5 Vdc 2N5151 2N5153 Collector-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 Adc IC = 5 Adc, IB = 500 Adc Base-Emitter Voltage nonsaturated VCE = 5 Vdc, IC = 2.5 Adc Base-Emitter Saturation Voltage IC = 2.5 Adc, IB = 250 mAdc IC = 5 Adc, IB = 500 mAdc VCE(sat) hFE 2N5151 2N5153 20 50 30 70 20 40 0.75 1.5 1.45 1.45 2.2 Vdc Vdc Vdc 90 200
VBE VBE(sat)
DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short Circuit Forward-Current Transfer Ratio IC = 500 mAdc, VCE = 5 Vdc, f = 10 MHz 2N5151 2N5153 Common-Emitter Small-Signal Short-Circuit Forward-Current Transfer Ratio IC = 100 mAdc, VCE = 5 Vdc, f = 1 kHz 2N5151 2N5151 Output Capacitance VCB = 10 Vdc, IE = 0, f = 1.0 MHz
hfe
6 7
hfe
20 50 250 pF
Cobo
SWITCHING CHARACTERISTICS Turn-On Time IC = 5 Adc, IB1= 500 mAdc Turn-Off Time RL = 6 Storage Time IB2 = -500 mAdc Fall Time V BE(OFF) = 3.7 Vdc t
on
0.5 1.5 1.4 0.5
s s s s
off t t
s f
SAFE OPERATING AREA
DC Tests TC = +250C, 1 Cycle, t p= 1.0 s Test 1 VCE = 5.8Vdc, IC = 2.0 Adc Test 2 VCE = 32 Vdc, IC = 340 mAdc Test 3 VCE = 80 Vdc, IC = 20 mAdc
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120101 Page 2 of 2
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