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Edc 1

This document contains test questions for an AC Machines class. It is divided into three sections. The first section asks students to define transistor symbols and timing characteristics. The second section requires explanations of transistor operations and input-output characteristics. The third section differentiates between bipolar junction transistors and JFETs, and explains voltage divider biasing of a BJT and depletion-type MOSFET operation. The document provides instructions that all questions are compulsory and to show work for full marks.

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33 views1 page

Edc 1

This document contains test questions for an AC Machines class. It is divided into three sections. The first section asks students to define transistor symbols and timing characteristics. The second section requires explanations of transistor operations and input-output characteristics. The third section differentiates between bipolar junction transistors and JFETs, and explains voltage divider biasing of a BJT and depletion-type MOSFET operation. The document provides instructions that all questions are compulsory and to show work for full marks.

Uploaded by

pawan_32
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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G. H.

RAISONI POLYTECHNIC, JALGAON


FIRST CLASS TEST (2013-14) SUBJECT: -AC MACHINES SEMESTER: -5
TH

17316

G. H. RAISONI POLYTECHNIC, JALGAON


FIRST CLASS TEST (2013-14) SUBJECT: -ELECTRONIC DEVICES & CIRCUITS

17316

TIME: - 1 HOUR MARKS: - 25

SEMESTER: -2nd COURSE: -EJ3G

TIME: - 1 HOUR MARKS: - 25

COURSE: -EE5E

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Instructions:1. All Questions are compulsory. 2. Figures to the right indicates full marks 3. Use of non-programmable calculator is permissible. Q-1) Attempt any Three: a) Draw the symbols of i) NPN transistor ii) P-ch JFET iii) N-ch DMOSFET b) Define for a transistor i) Rise time ii) Storage time iii) Delay time c) Define i)RDS ii) gm iii) IDSS d) Compare Emitter, Base, Collector w.r.t. their width & doping level. Q-2) Attempt any Two: a) Explain the operation of NPN Transistor. b) Draw the experimental set up to observe i/p-o/p characteristics of Common base configuration & draw its i/p o/p characteristics. c) Explain the operation of N-ch JFET. Q-3) Attempt any Two: b) Differentiate between BJT & JFET. c) Explain the Voltage Divider Biasing of BJT. (04*02=08) a) Explain the operation of N-ch Depletion type MOSFET (04*02=08) (03*03=09)

Instructions:4. All Questions are compulsory. 5. Figures to the right indicates full marks 6. Use of non-programmable calculator is permissible. Q-1) Attempt any Three: e) Draw the symbols of i) NPN transistor ii) P-ch JFET iii) N-ch DMOSFET f) Define for a transistor i) Rise time ii) Storage time iii) Delay time g) Define i)RDS ii) gm iii) IDSS h) Compare Emitter, Base, Collector w.r.t. their width & doping level. Q-2) Attempt any Two: d) Explain the operation of NPN Transistor. e) Draw the experimental set up to observe i/p-o/p characteristics of Common base configuration & draw its i/p o/p characteristics. f) Explain the operation of N-ch JFET. Q-3) Attempt any Two: e) Differentiate between BJT & JFET. f) Explain the Voltage Divider Biasing of BJT. (04*02=08) d) Explain the operation of N-ch Depletion type MOSFET (04*02=08) (03*03=09)

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