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Insulator: Current I 0 Total Mobile Electron Charge 0

The document discusses the operation of different electronic devices including insulators, conductors, MOSFETs, and BJTs. For insulators, there is no current and no mobile charge carriers. For conductors, current is due to the flow of mobile electrons over time. MOSFETs function by controlling the flow of channel electrons between the source and drain using a gate voltage to accumulate or deplete charge. BJTs use minority carrier injection from the base into the collector region to control the collector current. The key operating parameters discussed are carrier charge, transit time, and currents in each region of the devices.

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Kiran Kumar
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32 views9 pages

Insulator: Current I 0 Total Mobile Electron Charge 0

The document discusses the operation of different electronic devices including insulators, conductors, MOSFETs, and BJTs. For insulators, there is no current and no mobile charge carriers. For conductors, current is due to the flow of mobile electrons over time. MOSFETs function by controlling the flow of channel electrons between the source and drain using a gate voltage to accumulate or deplete charge. BJTs use minority carrier injection from the base into the collector region to control the collector current. The key operating parameters discussed are carrier charge, transit time, and currents in each region of the devices.

Uploaded by

Kiran Kumar
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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INSULATOR

Current i = 0 Total mobile electron charge = 0

CONDUCTOR
i

Current i = Q / tT Total mobile electron charge = Q Transit time = tT Total fixed positive charge = Q+ = Q

MOSFET

Drain current id = 0
id ig
Gate

Gate oxide

Source

Channel

Drain

Gate current ig = 0 dQ+/dt

MOSFET
id ig
Gate

Gate oxide

Source

Channel

Drain

Drain current id = Q / tT Total channel electron charge = Q Transit time = tT Total gate charge = Q+ = Q

Gate current ig = 0

MOSFET
id ig
Gate

Gate oxide

Source

Channel

Drain

Drain current id = 0 Q / t T Total channel electron charge = Q Transit time = tT Total gate charge = Q+ = Q

Gate current ig = dQ+/dt

BJT
ic ib

Emitter (n)

Base (p)

Collector (n)

++ Current ib = dQ 0 state) Q(insulating/off //dt tL c= tL = minority carrier lifetime

BJT
ic ib

Emitter (n)

Base (p)

Collector (n)

Current ic = Q / tT Total mobile electron charge = Q Transit time = tT Total fixed positive charge = Q+ = Q

BJT
ic ib

Emitter (n)

Base (p)

Collector (n)

Current ib = dQ+ / dt (< 0)

BJT
ic ib

Emitter (n)

Base (p)

Collector (n)

Current ib = 0 Current ic = 0

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