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JRE Group of Institutions Assignment-1 Sub: Electronics Engineering (EEC-101) Faculty: Gaurav Sinha

This document contains 8 questions about electronics engineering concepts like semiconductor conductivity, current density expressions, doping densities, resistivity calculations for intrinsic and n-type silicon, free electron density calculation from resistance, drift velocity calculation, conductivity calculation for doped silicon, and diode current calculations based on voltage and temperature.

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Meagan Monroe
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27 views1 page

JRE Group of Institutions Assignment-1 Sub: Electronics Engineering (EEC-101) Faculty: Gaurav Sinha

This document contains 8 questions about electronics engineering concepts like semiconductor conductivity, current density expressions, doping densities, resistivity calculations for intrinsic and n-type silicon, free electron density calculation from resistance, drift velocity calculation, conductivity calculation for doped silicon, and diode current calculations based on voltage and temperature.

Uploaded by

Meagan Monroe
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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JRE Group of Institutions Assignment-1 Sub: Electronics Engineering (EEC-101) Faculty: Gaurav Sinha

Q1. Explain the difference between the conductivity of metal, insulator and semiconductor with the help of energy band diagrams? Q2. Draw the figure and derive an expression for the current density, J, of semiconductor? Q3. A block of silicon is doped with a donor atom density of ND= 4 X 1014 atoms/cm3, and with an acceptor atom density of NA= 3.3 X 1014 atoms/cm3. Determine the resultant densities of free electrons & holes. Q4. A cylindrically shaped section of n-type silicon has a 1 mm length and 0.1 mm2 cross-sectional area. Calculate its conductivity and resistance a) When it is purely intrinsic material? b) When it has a free electron density of n= 8 X 1013/cm3?

Q5. Calculate the free electron density in a 1 mm cube of N-type silicon if its measured resistance is 35k. Q6. Determine the applied voltage required to produce a drift current velocity of 1.2X105 cm/sec in a 0.15mm section of germanium. Q7. A bar of silicon with ni=1.4X1016/m3 is doped with impurity atoms until the hole density p=8.5X1021/m3. The mobility of the electrons and holes are n=0.14m2/Vsec & p=0.05m2/V-sec: a) b) c) Find the electron density, n? Is the material N type or P type? Find the conductivity, ?

Q8. The voltage across a silicon diode (=2, V T=26mV) at room temperature (300K) is 0.7V when 2mA current flows through it. If the voltage increases to 0.75V, calculate: a) the diode current, I?

b) Percentage change in diode current?

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