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Written Report in Laboratory I: (Electronics Iii)

1) A common-emitter amplifier circuit was analyzed. The required base resistance Rb was calculated to be 28.5kΩ to bias the transistor at a collector voltage of 6V with a beta of 200. The estimated collector current was 1.82mA and transconductance was 70mA/V. 2) For the common-emitter amplifier, the low frequency -3dB point was calculated to be 195Hz and high frequency -3dB point was 2.99MHz. 3) For the common-base amplifier, the gain was calculated to be 1.81. The low frequency -3dB point was 28Hz and the high frequency point could not be determined due to equipment limitations.

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Madel Laurel
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0% found this document useful (0 votes)
31 views5 pages

Written Report in Laboratory I: (Electronics Iii)

1) A common-emitter amplifier circuit was analyzed. The required base resistance Rb was calculated to be 28.5kΩ to bias the transistor at a collector voltage of 6V with a beta of 200. The estimated collector current was 1.82mA and transconductance was 70mA/V. 2) For the common-emitter amplifier, the low frequency -3dB point was calculated to be 195Hz and high frequency -3dB point was 2.99MHz. 3) For the common-base amplifier, the gain was calculated to be 1.81. The low frequency -3dB point was 28Hz and the high frequency point could not be determined due to equipment limitations.

Uploaded by

Madel Laurel
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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July 28, 1013

Written Report
In
Laboratory I
(ELECTRONICS III)


Submitted by:
Cambarihan, Edechel
Hidalgo, Carla Jane T.
Laurel, Madel V.


Submitted to:
Engr. Julius Angeles




I. Common-Emitter Amplifier



- Using a 2N3904 in the figure. Calculate the base resistance Rbi that is needed to bias the
device at a collector voltage VC=6-7V, = 200
( )
( )
| |
c
bi
c
c
c
b
T
b
H
i
Solution:
Let V = 6V
R =?a
10V+ I 2.2k 6V=0
then, I 1.82mA
I 1.82mA
I 9.09 A
200
10k
10V
1
V

0k R

|
O +
=
= = =
(
O
=
(
(

O +
( )
( )
( )
| |
( )
( )
bi
TH
bi
TH b TH E
b
b
i
E
b1 bi
bi
10k R
R
10k R
V + I R 0.7 I 1k 0
10k R 10k
- 10V + I + 0.7 + I 1k


solvin
= 0
10k +R 10k +R
simultaneously
R = 28.5 k
g

(
(

O
=
O +
+ + O =
(
(
(

O O
O
O O

O

- Estimated collector current I
C
and transconductance
V1
120 Vrms
60 Hz
0
R1
10k
R2
100
R3
10k
Rb1
R5
2.2k
R6
1k
C1
1F
C2
1F
C3
10F
Q1
BJT_NPN_VIRTUAL
VCC
10V
Vout
Vin

C
m
T
I 1.82mA
g = =70mA/V
0.026V V
= =


A. Low-frequency response
o
o
V
n
V
i
V = 79.25mV
V 79.25mV
A = =
1mV
A =
V
79.25

- Estimate transconductance
m V C
m
m
g = A /R
g = 79.25/2.2k
g = 36mA/V
O

V
V -3dB
V -3dB V -3dB
L
L V
L V
L
L
( )
( ) ( )
A
A =
A = 79.25/A =57
since, f = 559 Hz
f /10= 55.9 Hz; A = 9v
f /100 = 5.59 Hz; A = 0.5
at 100 F
f =195Hz
f / 1
2
0 =19.

V
L V
5Hz ; A =13
f /100= 1.95Hz; A =5


B. High-frequency response
H
H
H
V
F =2.6Mhz
w
; f =299.21kHz
0.01uF
f=10f = 2.99Mhz
A

=5.3




II. Common-Base Amplifier


in o
V o in
V
V
V -3dB ( )
( ) V -3dB
V = 5mV, V = 9.05mV, f = 11.1kHz
then,
A =V /V
A = 9.05mV /5mV
A = 1.81
1.81
A =
2
A = 1.28


A. Low-frequency response
L
L
f = 28 Hz
at 100 uF, f = 0.656Hz


B. High-frequency response
- cant be displayed
- maximum frequency of function generation is 6 MHz
H
c i 0
V 3dB
H
( )
w/0.01uF
f =3.016MHz
R =10k, V=5mV, V =333mV, Av=66.6
66.6
A = =47.09
2
F =cant be displayed


R1
100k
R2
100k
Rc
R4
1k
R5
100
R6
10
C1
1F
VCC
12V
Vin
Vout

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