Scribd
Upload
90 views1 page

2013 01 Ee3323 HW4

This document is a homework assignment for an electronics engineering course. It contains 8 questions related to semiconductor physics and devices. The questions involve calculating resistivity, mobility, diffusion coefficient and resistance using equations from the course textbook. They also involve analyzing how properties like resistivity change with doping and temperature for semiconductor materials like silicon and cadmium sulfide.

Uploaded by

Jesse Simmons
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
90 views1 page

2013 01 Ee3323 HW4

This document is a homework assignment for an electronics engineering course. It contains 8 questions related to semiconductor physics and devices. The questions involve calculating resistivity, mobility, diffusion coefficient and resistance using equations from the course textbook. They also involve analyzing how properties like resistivity change with doping and temperature for semiconductor materials like silicon and cadmium sulfide.

Uploaded by

Jesse Simmons
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 1

EE 3323, HW #4, 28pts, Due Thu. Feb 14th 2013 (Happy Valentines Day!

)
1. For the following equations, show that the units work out correctly. a. (2) Eq.3.2, p.77 b. (2) Eq. 3.4a, p.78 c. (2) Eq. 3.8b, p.86 d. (2) Eq. 3.17b, p.98 e. (2) Eq. 3.25a, p.102

2. (2) An average drift velocity of 1000 cm/s results when 2 V is applied across a 1 cm long semiconductor bar. What is the hole mobility?

3. (2) For any given semiconductor, the mobilities in intrinsic material are (lower than, higher than, the same as) those in heavily doped material. 4. (2) The electron mobility in a Si sample at room temperature is 1300 cm2/V-S. What is the electron diffusion coefficient? 5. (2) A silicon sample maintained at room temperature is uniformly doped with Nd= 1x1016 cm-3 donors. Calculate the resistivity using Eq. 3.8a. Compare the calculated result to the resistivity indicated by Fig. 3.8a.

6. (2) A 500 Ohm resistor is made from a bar-shaped piece of n-type Si. The bar has a crosssectional area of 0.01 cm2 and a length of 1 cm. Determine the required doping. 7. (4) A lightly doped (Nd=1014cm-3) Si sample is heated from room temperature to 100 degrees Celsius. Is resistivity expected to increase or decrease? Briefly explain.

8. CdS is used in commercial photoconductors. The spectral response closely matches that of the human eye. a. (2) Why do you think the conducting film has a snake-like pattern? (see the picture of the photoconductor on p.147) b. (2) The conducting film is 0.3mm wide and 3cm long and 5m thick. Nd=1013cm-3>>ni and n=100cm2/V-s. What is the dark resistance?

You might also like