UNISONIC TECHNOLOGIES CO.

, LTD 81CXXX/81NXXX
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
DESCRIPTION
The UTC 81CXXX and 81NXXX series are good performance voltage detector and manufactured by CMOS technologies with highly accurate, low power consumption. A delay circuit is built-in to each detector, therefore, peripherals are unnecessary and high density mounting is possible. Detect voltage is extremely accurate with minimal temperature drift. Both CMOS and N-channel open drain output configurations are available.
3

CMOS IC

1 1

SOT-23

SOT-89

FEATURES
*Highly Accurate : Detect voltage 2% *Built-In Delay time : 1ms ~ 50ms, 50ms ~ 200ms, 200ms ~ 400ms, *Detect Voltage Temperature Characteristics: TYP 100ppm/ *Wide Operating Voltage Range : 0.7V ~ 10.0V *Low Current Consumption : TYP 1.0 A (VIN=2.0V)

TO-92

*Pb-free plating product number: 81CXXXL/81NXXXL

ORDERING INFORMATION CMOS:

Order Number Normal Lead Free Plating 81Cxx--AB3-E-R 81CxxL--AB3-E-R 81Cxx--AE3-3-R 81CxxL--AE3-3-R 81Cxx--AE3-5-R 81CxxL--AE3-5-R 81Cxx--T92-D-B 81CxxL--T92-D-B 81Cxx--T92-E-B 81CxxL--T92-E-B 81Cxx--T92-D-K 81CxxL--T92-D-K 81Cxx--T92-E-K 81CxxL--T92-E-K N-Channel: Order Number :Delay Time Normal Lead Free Plating Duration Code 81Nxx--AB3-E-R 81NxxL--AB3-E-R 81Nxx--AE3-3-R 81NxxL--AE3-3-R 81Nxx--AE3-5-R 81NxxL--AE3-5-R H 1 ~ 50 ms J 81Nxx--T92-D-B 81NxxL--T92-D-B 50 ~ 200 ms 81Nxx--T92-E-B 81NxxL--T92-E-B 200 ~ 400 ms K 81Nxx--T92-D-K 81NxxL--T92-D-K 81Nxx--T92-E-K 81NxxL--T92-E-K Note: 1. Pin assignment: I:Vin O:Vout G:Vss 2.xx: Output Voltage, refer to Marking Information. Package SOT-89 SOT-23 SOT-23 TO-92 TO-92 TO-92 TO-92 Pin Assign. 1 2 3 O I G O G I G O I I G O O I G I G O O I G Packing Tape Reel Tape Reel Tape Reel Tape Box Tape Box Bulk Bulk :Delay Time Duration Code Package SOT-89 SOT-23 SOT-23 TO-92 TO-92 TO-92 TO-92 Pin Assign. 1 2 3 O I G O G I G O I I G O O I G I G O O I G Packing Tape Reel Tape Reel Tape Reel Tape Box Tape Box Bulk Bulk

1 ~ 50 ms 50 ~ 200 ms 200 ~ 400 ms

P Q R

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81CXXX/81NXXX
ORDERING INFORMATION(Cont.)
8 1C x x L - 1 - A B 3 - x -R
(1)Packing Type (2)Pin Code (3)Package Type (4)Delay Time (5)Lead Plating (6)Output Voltage Code (7)Output Configuration

CMOS IC

(1) R: Tape Reel, B: Tape Box, K: Bulk (2) refer to Pin Assignment (3) AB3: SOT-89, AE3: SOT-23, T92: TO-92 (4) 1 : refer to Delay Time (5)L: Lead Free Plating, Blank: Pb/Sn (6) xx: refer to Marking Information (7) C: CMOS, N: N-Cannel

MARKING INFORMATION
PACKAGE 10:1.0V 11:1.1V 12:1.2V 13:1.3V 14:1.4V 15:1.5V 16:1.6V 17:1.7V 18:1.8V 19:1.9V 20:2.0V 21:2.1V 22:2.2V 23:2.3V 24:2.4V 25:2.5V VOLTAGE CODE 26:2.6V 27:2.7V 28:2.8V 29:2.9V 30:3.0V 31:3.1V 32:3.2V 33:3.3V 34:3.4V 35:3.5V 36:3.6V 37:3.7V 38:3.8V 39:3.9V MARKING

SOT-89

TO-92

40:4.0V 41:4.1V 42:4.2V 43:4.3V 44:4.4V 45:4.5V 46:4.6V 47:4.7V 48:4.8V 49:4.9V 50:5.0V

Date Code C:CMOS N:N-Channel

81XXXX
1 2 3

Lead Plating Voltage Code

C:CMOS N:N-Channel

UTC 81XXXX

Lead Plating Voltage Code Date Code

Pin Code 1 2 3

PACKAGE INTEGER* CODE DECIMAL** CODE 1. 1 .0 A 2. 2 .1 B 3. 3 .2 C 4. 4 .3 D 5. 5 .4 E SOT-23 Voltage Code 6. 6 .5 F .6 G .7 H .8 J .9 K * Represents the integer of the Detect Voltage ** Represents the decimal number of the Detect Voltage

MARKING
3 Month Lead Plating Pin Code 2 1

EXAMPLE:
81C27P 3 2HA L 2 1
Month (January ) L:Pb-free Pin Code Voltage Code

81N27H 3 2HE 2 L 1
Month (May) L:Pb-free Pin Code

Voltage Code

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81CXXX/81NXXX
BLOCK DIAGRAM
VIN

CMOS IC

Delay Circuit VREF

VOUT

Vss CMOS Output

VIN

VOUT Delay Circuit VREF

Vss N-channel Open Drain Output

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81CXXX/81NXXX
ABSOLUTE MAXIMUM RATINGS (Ta=25)
PARAMETER Input Voltage Output Current SYMBOL VIN IOUT

CMOS IC

RATINGS UNIT 12 V 50 mA CMOS VSS-0.3 ~ VIN+0.3 Output Voltage VOUT V N-Ch open drain VSS-0.3 ~ 9 SOT-23 150 Power Dissipation PD mW SOT-89 500 TO-92 300 Operating Temperature TOPR -30 ~ +80 Storage Temperature TSTG -40 ~ +125 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA
PARAMETER Thermal Resistance Junction-Case SOT-23 SOT-89 TO-92 SYMBOL JC RATINGS 200 100 45 UNIT /W

ELECTRICAL CHARACTERISTICS (Ta=25)

Detection voltage (1.0V ~ 1.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VDF TOPRVDF tDLY * 5 VIN changes from 0.6V ~ 10V 50 VDF=1.6V ~ 6.0V VIN=1.5V VIN=5.0 N-ch VDS=0.5V, VIN =1.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output) TEST CONDITIONS MIN VDF (T) X0.98 VDF X0.02 0.7 MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 0.9 2.6 A 2.0 4.2 A 2.2 -15.4 100 200 mA mA ppm/ ms TYP

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81CXXX/81NXXX
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (2.0V ~ 2.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VDF TOPRVDF tDLY * 5 VIN changes from 0.6V ~ 10V TEST CONDITIONS 50 VDF=1.6V ~ 6.0V VIN=2.0V VIN=5.0V N-ch VDS=0.5V, VIN =2.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output) TEST CONDITIONS MIN VDF (T) X0.98 VDF X0.02 0.7 TYP

CMOS IC

MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 1.0 3.0 A 2.0 4.2 A 7.9 -15.4 100 200 mA mA ppm/ ms

Detection voltage (3.0V ~ 3.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) VDF TOPRVDF tDLY * 5

VDF=1.6V ~ 6.0V VIN =3.0V VIN =5.0V N-ch VDS=0.5V, VIN =3.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output)

MIN VDF (T) X0.98 VDF X0.02 0.7

MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 1.3 3.4 A 2.0 4.2 A 10.1 -15.4 100 mA mA ppm/ 200 ms

TYP

VIN changes from 0.6V ~ 10V

50

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81CXXX/81NXXX
ELECTRICAL CHARACTERISTICS(Cont.)
Detection voltage (4.0V ~ 4.9V) PARAMETER SYMBOL CIRCUIT Detect Voltage Hysteresis Range Operating Voltage Supply Current VDF VHYS VIN ISS 1 1 1 2 3 Output Current IOUT 4 VDF Temperature Characteristics Transient Delay Time (VDR VOUT inversion) Detection voltage (5.0V) PARAMETER Detect Voltage Hysteresis Range Operating Voltage Supply Current Output Current VDF TOPRVDF tDLY * 5 VIN changes from 0.6V ~ 10V TEST CONDITIONS 50 VDF=1.6V ~ 6.0V VIN=4.0V VIN=5.0V N-ch VDS=0.5V, VIN=4.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output) TEST CONDITIONS MIN VDF (T) X0.98 VDF X0.02 0.7

CMOS IC

MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 1.5 3.8 A 2.0 4.2 A 11.5 -15.4 100 200 mA mA ppm/ ms

TYP

SYMBOL CIRCUIT VDF VHYS VIN ISS IOUT 1 1 1 2 3 4

VDF=1.6V ~ 6.0V VIN=5.0V N-ch VDS=0.5V, VIN =5.0V P-ch VDS=2.1V, VIN=8.0V (CMOS output)

MIN VDF (T) X0.98 VDF X0.02 0.7

MAX UNIT VDF (T) VDF (T) V X1.02 VDF VDF V X0.05 X0.08 10.0 V 2.0 4.2 A 13.0 mA -15.4 100 200 mA ppm/ ms

TYP

VDF VDF Temperature Characteristics TOPRVDF VIN changes from Transient Delay Time 50 5 tDLY * (VDR VOUT inversion) 0.6V ~ 10V VDF (T): established detect voltage value Release Voltage: VDR = VDF + VHYS * Transient Delay Time: 1ms ~ 50ms & 200ms ~ 400ms versions are also available.

Note: The power consumption during power-start to output being stable (release operation) is 2 A greater than it is after that period (completion of release operation) because of delay circuit through current.

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81CXXX/81NXXX
TEST CIRCUITS
1-1 1-2
100k

CMOS IC

VIN VIN + V

VOUT VSS VIN V + V

VIN

VOUT VSS V

Cmos Output

N-channel Open Drain Output

2
A VIN + VIN VOUT VSS

3
VIN VIN + VOUT Vss A + VDS

4
+ VDS VIN VIN + VOUT Vss A -

5-1

VIN

VIN

VOUT Vss Measurement waveform

Cmos Output

5-2

100k

VIN VIN

VOUT Vss Measurement waveform

N-channel Open Drain Output

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS
(1) AMBIENT TEMPERATURE vs. TRANSIENT DELAY TIME
81C30Q
200 400

CMOS IC

81C30R

320 150

tDLY (msec)

tDLY (msec)
100 50

240

160

-30

-10

10

30

50

70

80 -30

-10

10

30

50

70

Ambient Temp., Ta ( ) 81C30P

50

Ambient Temp., Ta ( )

40

tDLY (msec)

30 20

10 0 -30

-10

10

30

50

70

Ambient Temp., Ta ( )

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(2) P-CHANNEL DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE
81C27Q 20 18
Output Current, IOUT (mA)

CMOS IC

81C33Q 20 Ta=25 VDS=2.1V 1.5V 1.0V 0.5V

Ta=25 VDS=2.1V
Output Current, IOUT (mA)

18 16 14 12 10 8 6 4 2

16 14 12 10 8 6 4 2 0 0.0 2.0 4.0 6.0

1.5V 1.0V 0.5V

8.0

10.0

0 0.0

2.0

4.0

6.0

8.0

10.0

Input Voltage, VIN (V)

81C44Q Ta=25 VDS=2.1V 1.5V 1.0V 0.5V

Input Voltage, VIN (V)

20 18

Output Current, IOUT (mA)

16 14 12 10 8 6 4 2 0 0.0 2.0 4.0 6.0

8.0

10.0

Input Voltage, VIN (V)

(2)

TRANSIENT DELAY TIME vs. INPUT VOLTAGE

81C33Q 230 200 170 Ta=25

tD LY (msec)

140 110 80 50 0.0

2.0

4.0

6.0

8.0

10.0

Input Voltage, VIN (V)

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
(3) SUPPLY CURRENT vs. INPUT VOLTAGE

CMOS IC

4.0

81N16

4.0
Supply Current, Is s ( A)

81N25

Supply Current, Iss ( A)

3.0

3.0 Ta=80 2.0 25 1.0

2.0

Ta=80 25

1.0

0.0

10

0.0

10

Input Voltage, V IN (V) 4.0

Supply Current, Is s ( A)

Input Voltage, V IN (V) 4.0

Supply Current, Iss ( A)

81N27

81N28

3.0

3.0 Ta=80 2.0 25 1.0

2.0

Ta=80 25

1.0

0.0

10

0.0

10

Input Voltage, V IN (V) 4.0

Supply Current, Iss ( A)

Input Voltage, V IN (V) 4.0

Supply Current, Is s ( A)

81N29

81N30

3.0 Ta=80 2.0 25 1.0

3.0 Ta=80 2.0 25 1.0

0.0

10

0.0

10

Input Voltage, V IN (V)

Input Voltage, V IN (V)

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N33 81N35

CMOS IC

4.0

4.0

Supply Current, Iss (A)

3.0

Supply Current, Iss (A)

3.0

2.0

Ta=80 25

2.0

Ta=80

1.0

1.0

25

0.0

10

0.0

10

Input Voltage, VIN (V)

Input Voltage, V IN (V)

(4)

OUTPUT VOLTAGE vs. INPUT VOLTAGE

30 81N16 VIN-VOUT:100k Ta=25/ 80 4 81N25 V IN-VOUT:100k Ta=25/ 80

Output Voltage, VOUT (V)

Output Voltage, VOUT (V)

2.5 2.0 1.5 1.0 0.5 0.0

1 2 Input Voltage, VIN (V) 81N27 VIN-VOUT:100k Ta=25/ 80

2 3 Input Voltage, VIN (V) 81N28

VIN-VOUT:100k Ta=25 / 80

Output Voltage, VOUT (V)

Output Voltage, VO UT (V)

1 2 3 Input Voltage, V IN (V)

2 3 1 Input Voltage, V IN (V)

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)

CMOS IC

4
Output Voltage, VOUT (V)

81N29 VIN-VOUT:100k Ta=25 / 80

Output Voltage, VOUT (V)

5 4 3 2

81N30 VIN-VOUT:100k Ta=25 / 80

1 0

3 2 1 Input Voltage, V IN (V) 81N33

3 2 4 Input Voltage, VIN (V) 81N35

5
Output Voltage, VOUT (V)

VIN-VOUT:100k Ta=25 / 80
Output Voltage, V OUT (V)

5 4 3 2

VIN-VOUT:100k Ta=25 / 80

4 3 2

1 0

1 0

2 3 4 Input Voltage, VIN (V)

2 3 4 Input Voltage, VIN (V)

(5) N-CHANNEL DRIVRE OUTPUT CURRENT vs. VDS

81N16 Ta=25
Output Current, IOUT (uA)

15
Output Current, IO UT (mA)

1400 1200

81N16 Ta=25 VIN=0.8V

12 VIN=1.5V 9

1000 800 600 400 200 0.7V

6 1.0V 3 0 0.0

0.5

1.0 V DS (V)

1.5

2.0

0.2

0.4 0.6 VDS (V)

0.8

1.0

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)

CMOS IC

30 Ta=25
Output Current, IOUT (mA)

81N25

1200 1000 800 600 400 200 0

81N25 Ta=25 VIN=0.8V

20 15 1.5V 10 5 0

Output Current, IOUT (uA)

25

V IN=2.0V

0.7V

0.0

0.5

1.5 1.0 VDS (V) 81N27

2.0

2.5

0.0

0.2

0.4

0.6

0.8

1.0

VDS (V) 81N27 Ta=25 V IN=0.8V

30 Ta=25
Output Current, IOUT (mA)

1200 1000 800 600 400 200 0

20 15 10 5 0 0.0

V IN=2.0V

Output Current, IOUT (uA)

25

0.7V

1.0V 0.5 1.0 1.5 VDS (V)

81N28 Ta=25

2.0

2.5

0.0

0.2

0.4

0.6

0.8

1.0

V DS (V)
81N28 Ta=25 VIN=0.8V

30

300

Output Current, I OUT (mA)

Output Current, I OUT (uA)

25 20 15 10 5 0 1.0V 0.5 1.5 1.0 VDS (V) 2.0 2.5 VIN=2.0V

250 200 150 100 50 0

0.7V

0.0

0.0

0.2

0.4

0.6

0.8

1.0

VDS (V)

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N29 Ta=25
Output Current, I OUT (mA) Output Current, I OUT (uA)

CMOS IC

30 25 20 15 10 5 0

300 250 200 150 100 50 0

81N29 Ta=25 V IN=0.8V

VIN=2.0V

0.7V

1.0V

0.0

0.5

1.0 1.5 VDS (V) 81N30

2.0

2.5

0.0

0.2

0.4

0.6

0.8

1.0

VDS (V) 81N30 Ta=25

60 50

350 300

Ta=25
Output Current, I OUT (uA)

Output Current, I OUT (mA)

40 30 20 10 0

250 200 150 100 50 0

V IN=0.8V

VIN=2.0V

0.7V

1.0V
0.5 1.0 1.5 2.0 2.5 3.0 3.5

0.0

0.0

0.2

0.4

0.6

0.8

1.0

VDS (V)
81N33 Ta=25
300

V DS (V)
81N33 Ta=25

60 50 40 30 20 10 0

350

Output Current, I OUT (mA)

Output Current, I OUT (uA)

250 200 150

V IN=3.0V

V IN =0.8V

2.0V 1.0V
0.5 1.0 1.5 2.0 2.5 3.0 3.5

0.7V
100 50 0

0.0

0.0

0.2

0.4

0.6

0.8

1.0

VDS (V)

VDS (V)

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81CXXX/81NXXX
TYPICAL PERFORMANCE CHARACTERISTICS(Cont.)
81N35 Ta=25 V IN=3.0V
Output Current, I OUT (uA)

CMOS IC

60 50 40 30

1400 1200 1000 800

81N35 Ta=25 V IN =0.8V

Output Current, I OUT (mA)

2.5V

0.7V
600 400 200 0

2.0V
20

1.5V
10 0 0.0

0.5 1.0

1.5

2.0

2.5

3.0

3.5

0.0

0.2

0.4

0.6

0.8

1.0

VDS (V)

VDS (V)

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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