PNP Epitaxial Silicon Transistor: Medium Power Linear and Switching Applications

BD136/138/140
BD136/138/140
Medium Power Linear and Switching Applications
Complement to BD135, BD137 and BD139 respectively
TO-126 2.Collector 3.Base
1. Emitter
PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : BD136 : BD138 : BD140 : BD136 : BD138 : BD140 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 - 1.5 - 3.0 - 0.5 12.5 1.25 150 - 55 ~ 150 Units V V V V V V V A A A W W C C
VCEO
Collector-Emitter Voltage
VEBO IC ICP IB PC PC TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature
Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 Collector Cut-off Current Emitter Cut-off Current * DC Current Gain Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 0.1 - 10 25 25 40 Typ. Max. Units V V V A A
ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)
VCB = - 30V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 5mA VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 150mA IC = - 500mA, IB = - 50mA VCE = - 2V, IC = - 0.5A
250 - 0.5 -1 V V
* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage
* Pulse Test: PW=350s, duty Cycle=2% Pulsed
hFE Classificntion
Classification hFE3 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250
2000 Fairchild Semiconductor International
Rev. A, February 2000
BD136/138/140
Typical Characteristics
100 90 80
-500
VCE(sat)[mV], SATURATION VOLTAGE
VCE = -2V
-450 -400 -350 -300 -250 -200 -150 -100 -50 -0 -1E-3
hFE, DC CURRENT GAIN
70 60 50 40 30 20 10 0 -10
IC = 20 IB
-0.01 -0.1 -1
IC = 10
IB
-100
-1000
-10
IC[mA], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-1.1
-10
VBE[V], BASE-EMITTER VOLTAGE
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 -1E-3 -0.01 -0.01 -0.1 -1 -10 -1
t) (sa V BE 0 I B 1 IC = ) (on V V BE 5 =V CE
IC MAX. (Pulsed) IC MAX. (Continuous)

1 ms
-1
10us
0u 10 s
DC
-0.1
BD140
BD136
BD138
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Voltage
Figure 4. Safe Operating Area
20.0
17.5
PC[W], POWER DISSIPATION
15.0
12.5
10.0
7.5
5.0
2.5
0.0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
Rev. A, February 2000
BD136/138/140
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 0.05
+0.10
Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT E2CMOS FACT FACT Quiet Series FAST FASTr GTO
DISCLAIMER
HiSeC ISOPLANAR MICROWIRE POP PowerTrench QFET QS Quiet Series SuperSOT-3 SuperSOT-6
SuperSOT-8 SyncFET TinyLogic UHC VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. E
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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BD136/138/140

TO-126 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

VEBO IC ICP IB PC PC TJ TSTG

Electrical Characteristics TC=25C unless otherwise noted

ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on)

* Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage

* Pulse Test: PW=350s, duty Cycle=2% Pulsed

2000 Fairchild Semiconductor International

Rev. A, February 2000

VCE(sat)[mV], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage

VBE[V], BASE-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

IC MAX. (Pulsed) IC MAX. (Continuous)

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Base-Emitter Voltage

Figure 4. Safe Operating Area

PC[W], POWER DISSIPATION

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

(1.00) 0.75 0.10 1.60 0.10 0.75 0.10

(0.50) 1.75 0.20

#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]

SuperSOT-8 SyncFET TinyLogic UHC VCX

LIFE SUPPORT POLICY

PRODUCT STATUS DEFINITIONS Definition of Terms

2000 Fairchild Semiconductor International

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