2N4338/4339/4340/4341

Vishay Siliconix

N-Channel JFETs

PRODUCT SUMMARY
Part Number
2N4338 2N4339 2N4340 2N4341

VGS(off) (V)
0.3 to 1 0.6 to 1.8 1 to 3 2 to 6

V(BR)GSS Min (V)

50 50 50 50

gfs Min (mS)

0.6 0.8 1.3 2

IDSS Max (mA)

0.6 1.5 3.6 9

FEATURES
D D D D Low Cutoff Voltage: 2N4338 <1 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA

BENEFITS
D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification

APPLICATIONS
D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector Amplifiers D Ultrahigh Input Impedance Pre-Amplifiers

DESCRIPTION
The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST201 series data sheet.

TO-206AA (TO-18)

S 1

2 D Top View

3 G and Case

ABSOLUTE MAXIMUM RATINGS

Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 175_C Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Notes a. Derate 2 mW/_C above 25_C

For applications information see AN102 and AN106. Document Number: 70240 S-04028Rev. E, 04-Jun-01 www.vishay.com

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2N4338/4339/4340/4341
Vishay Siliconix
SPECIFICATIONS FOR 2N4338 AND 2N4339 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4338 2N4339

Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Unit

V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)

IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = 30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 5 V IG = 1 mA , VDS = 0 V

57

50 0.3 0.2 1 0.6 100 100

50 0.6 0.5 1.8 1.5 100 100 V mA pA nA pA V

2 4 2 2 0.7

Drain Cutoff Current Gate-Source Forward Voltagec

50

50

Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss en NF VDS = 10 V, VGS = 0 V, f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1.5 6 1 1 3 3 nV Hz dB VDS = 0 V, VGS = 0 V, f = 1 kHz 5 5 2500 7 15 1700 7 pF mS W 0.6 1.8 0.8 2.4 mS

SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341

Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Unit

V(BR)GSS VGS(off) IDSS IGSS IG ID(off) VGS(F)

IG = 1 mA , VDS = 0 V VDS = 15 V, ID = 0.1 mA VDS = 15 V, VGS = 0 V VGS = 30 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 0.1 mA VGS = 5 V VDS = 15 V

57

50 1 1.2 3 3.6 100 100

50 2 3 V 6 9 100 100 mA pA nA

2 4 2 2 3 0.7

50 70

pA

Drain Cutoff Current Gate-Source Forward Voltage

VGS = 10 V

IG = 1 mA , VDS = 0 V

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Document Number: 70240 S-04028Rev. E, 04-Jun-01

2N4338/4339/4340/4341
Vishay Siliconix

SPECIFICATIONS FOR 2N4340 AND 2N4341 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N4340 2N4341

Parameter Dynamic
Common-Source Forward Transconductance Common-Source Output Conductance Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltagec Noise Figure

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Unit

gfs VDS = 15 V, VGS = 0 V, f = 1 kHz gos rds(on) Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz Crss en NF VDS = 10 V, VGS = 0 V, f = 1 kHz VDS = 15 V, VGS = 0 V f = 1 kHz, RG = 1 MW 1.5 6 VDS = 0 V, VGS = 0 V, f = 1 kHz 5

1.3

3 30 1500 7 3

4 60 800 7

mS mS W

pF 3 nV Hz 1 1 dB

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms, duty cycle v3%. c. This parameter not registered with JEDEC.

NPA

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance vs. Gate-Source Cutoff Voltage
10 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 5 gfs Forward Transconductance (mS) 10 nA ID = 100 mA 1 nA IG Gate Leakage (A) TA = 125_C 500 mA

Gate Leakage Current

IDSS Saturation Drain Current (mA)

6 gfs 4 IDSS

100 pA

IGSS @ 125_C 500 mA

10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C

0 0 1 2 3 4 5

0.1 pA 0 6 12 18 24 30

VGS(off) Gate-Source Cutoff Voltage (V)

VDG Drain-Gate Voltage (V)

Document Number: 70240 S-04028Rev. E, 04-Jun-01

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2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage
1500 rDS(on) Drain-Source On-Resistance ( ) 10 2 VGS(off) = 1.5 V 1200 gos gfs Forward Transconductance (mS) gos Output Conductance (S) 8 1.6 TA = 55_C 1.2 VDS = 10 V f = 1 kHz

Common-Source Forward Transconductance vs. Drain Current

900 rDS 600

0.8

25_C

300 rDS @ ID = 100 mA, VGS = 0 V gos @ VDS= 10 V, VGS = 0 V, f = 1 kHz 0 0 1 2 3 4 5

0.4

125_C

0 0.01 0.1 ID Drain Current (mA) 1

VGS(off) Gate-Source Cutoff Voltage (V)

Output Characteristics
400 VGS(off) = 0.7 V 320 ID Drain Current (A) ID Drain Current (mA) VGS = 0 V 1.6 2

Output Characteristics
VGS(off) = 1.5 V

VGS = 0 V 1.2 0.3 V 0.8 0.6 V 0.4 1.2 V 0 0.9 V

240

0.1 V

160

0.2 V

0.3 V 80 0.5 V 0 0 4 8 12 16 20 0.4 V

12

16

20

VDS Drain-Source Voltage (V)

VDS Drain-Source Voltage (V)

Output Characteristics
300 VGS(off) = 0.7 V 240 VGS = 0 V 0.1 V ID Drain Current (A) 180 0.2 V 120 0.3 V 60 0.4 V 0.5 V 0 0 0.1 0.2 0.3 0.4 0.5 0 0 0.2 ID Drain Current (mA) 0.8 1

Output Characteristics
VGS(off) = 1.5 V

0.3 V VGS = 0 V 0.6 0.6 V 0.4

0.2

0.9 V 1.2 V 0.4 0.6 0.8 1.0

VDS Drain-Source Voltage (V) www.vishay.com

VDS Drain-Source Voltage (V) Document Number: 70240 S-04028Rev. E, 04-Jun-01

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2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500 VGS(off) = 0.7 V 400 ID Drain Current (A) ID Drain Current (mA) VDS = 10 V 1.6 TA = 55_C 300 TA = 55_C 25_C 200 125_C 100 1.2 25_C 2 VGS(off) = 1.5 V VDS = 10 V

Transfer Characteristics

0.8

0.4

125_C

0 0 0.1 0.2 0.3 0.4 0.5

0 0 0.4 0.8 1.2 1.6 2

VGS Gate-Source Voltage (V)

VGS Gate-Source Voltage (V)

Transconductance vs. Gate-Source Voltage

1.5 VGS(off) = 0.7 V gfs Forward Transconductance (mS) 1.2 TA = 55_C 25_C 0.9 VDS = 10 V f = 1 kHz gfs Forward Transconductance (mS) 3.2 4

Transconductance vs. Gate-Source Voltage

VGS(off) = 1.5 V VDS = 10 V f = 1 kHz

2.4

TA = 55_C 25_C

0.6 125_C 0.3

1.6

0.8 125_C 0

0 0 0.1 0.2 0.3 0.4 0.5

0.4

0.8

1.2

1.6

VGS Gate-Source Voltage (V)

VGS Gate-Source Voltage (V)

Circuit Voltage Gain vs. Drain Current

200 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V 10 V RL + ID rDS(on) Drain-Source On-Resistance ( ) AV + g fs R L 2000

On-Resistance vs. Drain Current

TA = 25_C 1600 VGS(off) = 0.7 V 1200

160 AV Voltage Gain

120

80 1.5 V 40

VGS(off) = 0.7 V

800 1.5 V 400

0 0.01 0.1 ID Drain Current (mA) 1

0 0.01 0.1 ID Drain Current (mA) 1

Document Number: 70240 S-04028Rev. E, 04-Jun-01

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2N4338/4339/4340/4341
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance vs. Gate-Source Voltage
10 Crss Reverse Feedback Capacitance (pF) f = 1 MHz 8 Ciss Input Capacitance (pF) 5 f = 1 MHz 4

Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage

6 VDS = 0 V 4 10 V 2

3 VDS = 0 V 2

10 V

0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)

0 0 4 8 12 16 20 VGS Gate-Source Voltage (V)

Output Conductance vs. Drain Current

20 VGS(off) = 1.5 V VDS = 10 V f = 1 kHz 16 en Noise Voltage nV / Hz

Equivalent Input Noise Voltage vs. Frequency

VDS = 10 V

gos Output Conductance (S)

2.4

1.8 TA = 55_C 0.8 25_C 0.4 125_C 0 0.01 0.1 ID Drain Current (mA) 1

12

ID = 100 mA

8 ID = IDSS 4

0 10 100 1k f Frequency (Hz) 10 k 100 k

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Document Number: 70240 S-04028Rev. E, 04-Jun-01

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