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MS PHD Sample Interview Questionpapers

This document provides sample questions for a course on microelectronics and VLSI design. The questions cover topics like op-amps, transistors, logic gates, diodes, and binary arithmetic. Specifically, it includes 7 questions involving circuit analysis, logic design, transistor behavior, waveform sketching, and binary multiplication in 2's complement form. Diagrams and circuit schematics are provided as figures to accompany some of the questions.

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69 views1 page

MS PHD Sample Interview Questionpapers

This document provides sample questions for a course on microelectronics and VLSI design. The questions cover topics like op-amps, transistors, logic gates, diodes, and binary arithmetic. Specifically, it includes 7 questions involving circuit analysis, logic design, transistor behavior, waveform sketching, and binary multiplication in 2's complement form. Diagrams and circuit schematics are provided as figures to accompany some of the questions.

Uploaded by

vinothrece
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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MICROELECTRONICS AND VLSI DESIGN-SAMPLE QUESTIONS

Department of Electrical Engineering, IIT Madras


1. In the circuit of Figure 1, nd Rin . The opamp is ideal.

vcc 1 mA

A B 1 Volt

Rin ? R1

Figure 1: Figure for Problem 1

Figure 3: Figure for Problem 3 4. Find the logic equation realized by the circuit shown in Figure 4.
C I0 I1 I2 C I3 4 to 1 MUX F S1 S0 A B

2. Find VCE of the transistor in Figure 2. You may assume that the VBE of the device is 0.7 V, and that the device has a very high .

12 Volts 5.3 K 1 K VCE 6.7 K 6 K

Figure 4: Figure for Problem 4 5. Refer to Figure 5. The waveform at S is shown. For t < 0, Q = 0. Sketch the waveform at Q for t > 0. The NOR gates have a propogation delay of Td .
Vdd 0 t S

Figure 5: Figure for Problem 5 Figure 2: Figure for Problem 2 6. A reverse biased p+ n diode has a depletion region of width W , and a voltage of V1 volts across the junction. The n region is uniformly doped. Neglect bi , the built in potential of the junction. What is the voltage required across the diode increase the depletion width to 2 W ? 7. Suppose we have in 2s complement form, the binary numbers 10011 and 01011. Determine the product. ( 1 mark)

3. For the circuit shown in Figure 3, mark the inverting and noninverting terminals of the opamp to ensure negative

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